SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A PROTECTION LAYER

Abstract

The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the right of priority based on Taiwan Patent Application No.098146164 entitled “A SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A PROTECTION LAYER”, filed on Dec. 30, 2009, which is incorporated herein by reference and assigned to the assignee herein.

TECHNICAL FIELD

The present application generally relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device with a protection layer.

BACKGROUND

An active layer of the light-emitting diode is between two different conductivity cladding layers. When a current is applied to the electrodes above the two cladding layers, the electrons and the holes from the two cladding layers can inject into the active layer, are combined to generate the omnidirectional light in the active layer that is emitted from every surfaces of the light emitting diode. Due to its different mechanism from the incandescent lamp, the light emitting diode is called the cold light source. A light emitting diode is applied widely in different fields such as automobiles, computers, communications, and consumption electronic products because it has low volume, long life-time, low driving voltage, low consumption electric quantity, rapid response speed, and good shock-proof advantages.

Nevertheless, the application of the conventional light emitting diode has a restriction for it can only be operated under the direct current with low voltage. The high voltage or alternating current might damage the light emitting diode easily, so it needs a converter system to be adopted in the city electricity system. Furthermore, during a conventional light emitting diode assembly process, there is usually an electric static discharge that increase the instantaneous reversion voltage, and then make the light emitting diode breakdown.

SUMMARY

The present application is to provide a light emitting device at least comprising a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer; and a light-emitting unit comprising an epitaxial structure on the second connecting layer. The protection layer can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.

The present application is to provide an illumination unit at least comprising a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, a micro chip illumination module on the second connecting layer, and a conductive structure wherein the conductive structure electrically connecting to each micro chip.

The present application is to provide a semiconductor light emitting device with a structure can avoid the reversion current breakdown at least comprising a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a protection layer on the first connecting layer; a second connecting layer on the protection layer; a light-emitting diode on the second connecting layer; and a conductive structure electrically connecting the protection layer and the light-emitting diode in anti-parallel connection.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:

FIGS. 1, 2(a), 3-7 illustrate diagrams of a semiconductor device structure in accordance with the first embodiment of the present application;

FIGS. 2(b)-2(e) illustrate diagrams of a semiconductor device structure in accordance with the second embodiment of the present application;

FIGS. 8-12 illustrate diagrams of a semiconductor device structure in accordance with the third embodiment of the present application;

FIGS. 13(a)-13(d) illustrate diagrams of a semiconductor device structure in accordance with the fourth embodiment of the present application.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The first embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, wherein the protection layer can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIG. 1-FIG. 7. The application discloses a semiconductor light emitting device 11 with a light emitting unit comprising an epitaxial structure 1. The epitaxial structure 1 comprises a first growth substrate 10, a first conductivity type semiconductor layer 20 formed on the first growth substrate 10, an active layer 30 formed on the first conductivity type semiconductor layer 20, and a second conductivity type semiconductor layer 40 formed on the active layer 30, as shown in FIG. 1. The method of forming an epitaxial structure comprises providing a first growth substrate 10, then growing a first conductivity type semiconductor layer 20 on the first growth substrate 10 by the Metal-Organic Chemical Vapor Deposition method. When the growth of the first conductivity type semiconductor layer 20 is finished, the active layer 30 and the second conductivity type semiconductor layer 40 are grown successively. The first growth substrate 10 mentioned above can be GaAs. The first conductivity type semiconductor layer 20, the active layer 30 and the second conductivity type semiconductor layer 40 mentioned above comprise III-V group compound, such as AlGaInP series material. A regularly or irregularly roughened surface is formed on the surface of the second conductivity type layer 40 by an etch method, and a second connecting layer 50 is formed on the roughened surface.

Referring to FIG. 2(a), another epitaxial structure 2 which has a protection layer 70 grown on a second growth substrate 60 by the Metal-Organic Chemical Vapor Deposition method. The second growth substrate can be sapphire, the protection layer 70 is highly insulative and includes III-V group compound such as AlInGaN series material wherein undoped GaN is a preferred material. A regularly or irregularly roughened surface is formed on the protection layer 70 surface by etch method (not shown in the figures). The epitaxial structure 1 is connected with the epitaxial structure 2 by the second connecting layer 50, and the second growth substrate 60 is removed then so the structure shown in FIG. 3 is formed.

As FIG. 4 shows, an adhesive layer 80, a reflection layer 90 and a third connecting layer 100A are formed in sequence on the protection layer 70. As FIG. 5 shows, a heat dispersion substrate 110 is provided, and a forth connecting layer 100B is formed on the heat dispersion substrate 10. The structure having the third connecting layer 100A shown in FIG. 4 faces the structure having the forth connecting layer 100B shown in FIG. 5 so the third connecting layer 100A and the forth connecting layer 100B form a first connecting layer 100, as FIG. 6 shows. The material of the second connecting layer 50 can be polymer material like BCB, Epoxy, SOG, SU8 etc., or oxide such as TiO₂, Ti₂O₅, Ta₂O₃, Ta₂O₅, ITO, AZO, ZnO, and Al₂O₃, or nitride such as SiON_x, SiN_x, GaN, AlN, or diamond. The function of the adhesive layer 80 is to increase the adhesive force between the protection layer 70 and the reflection layer 90, the material of the adhesive layer can be ITO or ZnO, the material of the reflection layer 90 can be aluminum, silver, or other high reflectivity materials. The material of the first connecting layer 100, the third connecting layer 100A, and the forth connecting layer 100B can be soldering tin, low temperature metal, and metal silicides, such as PbSn, AuGe, AuBe, AuSi, Sn, In, PdIn. The material of the heat dispersion substrate 110 can be Si, Ge, Cu, Mo, AlN, ZnO.

The upper surface of the first conductivity type semiconductor 20 is exposed after removing the first growth substrate 10, then the regularly or irregularly roughened surface is formed by the etch method. By etching from the first conductivity type semiconductor layer 20 to the second conductivity type semiconductor layer 40, a partial portion surface of the second conductivity type semiconductor layer is exposed, then the electrodes 15 and 25 are formed on the upper surface of the first conductivity type semiconductor layer 20 and on the exposed surface of the second conductivity type semiconductor layer 40, then the structure of the light-emitting device 11 as the FIG. 7 is formed.

The second embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description when taken in conjunction with the FIG. 2(b)-FIG. 2(e). Referring to FIG. 2(b), another epitaxial structure 2 which has a protection layer 70 grown on a second growth substrate 60 by the Metal-Organic Chemical Vapor Deposition method is provided. The second growth substrate can be sapphire, and the protection layer 70 is highly insulative and includes III-V group compound such as AlInGaN series material wherein undoped GaN is a preferred material. A regularly or irregularly roughened surface is formed on the protection layer 70 surface by etch method (not shown in the figures). The protection layer has the first surface c and the second surface d, the area of the first surface c is larger than the area of the second surface d. The epitaxial structure 2 is larger than the epitaxial structure 1 in size. The epitaxial structure 1 is connected with the epitaxial structure 2 by the second connecting layer 50, so the structure shown in FIG. 2(c) is formed.

The upper surface of the first conductivity type semiconductor 20 is exposed after removing the first growth substrate 10, then the regularly or irregularly roughened surface is formed by the etch method. By etching from the first conductivity type semiconductor layer 20 to the second conductivity type semiconductor layer 40, a partial portion surface of the second conductivity type semiconductor layer is exposed, then the electrodes 15 and 25 are formed on the upper surface of the first conductivity type semiconductor layer 20 and on the exposed surface of the second conductivity type semiconductor layer 40, then the structure of the light-emitting device 16 as FIG. 2(e) is formed.

The third embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, and it can avoid the high voltage to breakdown the semiconductor light emitting device structure. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIGS. 8-12. The semiconductor light emitting device of this embodiment is operated in direct current or alternating current, and the device structure and manufacturing process different from that of the first embodiment as shown in FIGS. 1-6 are described as follows. First, removing the first growth substrate 10 in FIG. 6, as shown in FIG. 8. As FIG. 9 shows, forming the plurality of openings 140 by etching the first conductivity type semiconductor layer 20, active layer 30, the second conductivity type semiconductor layer 40, and the upper surface of the second connecting layer 50 by developing and etch process. Then etching the first conductivity type semiconductor layer 20, active layer 30, and the upper surface of the second conductivity type semiconductor layer 40 by developing and etch process. As FIG. 10 shows, the plurality of electrodes 35, 45 are formed on respectively and connecting electrically with the first conductivity type semiconductor layer 20 and the second conductivity type semiconductor layer 40 to form the plurality of micro chips 13. The electrodes 34, 45 are formed by deposition method for ohmic contact.

An insulating layer 120 is formed inside the plurality of openings 140 to avoid the current leakage. The material of the insulating layer can be dielectric materials such as SiOx or SiNx as shown in FIG. 11. Finally, the plurality of conductive structures 130 are formed and are connected electrically with the plurality of electrodes 35, 45 in a series connection or parallel connection. The illumination unit including the lighting module composed of the plurality of micro chips 13 is shown in FIG. 12. Every active layer of every micro chip emits the same or different wavelength, and the module composed with the plurality of micro chips can be operated in direct current or alternating current.

The fourth embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, and it can avoid the reversion current to breakdown the semiconductor light emitting device structure. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIG. 13(a)-FIG. 13(d).

The light emitting diode 14 that can avoid the reverse current breaking down the structure is exemplified in this embodiment. There are three differences in device structure and manufacturing process compared with the first embodiment shown in FIGS. 1-6. First, the protection layer 70 is composed of conductive materials, and the electricity is different from the second conductivity type semiconductor layer 40, and the material can be GaN doped with the impurity, dope a single layer structure of III-V group materials or zinc oxide doped with the impurity, or a multiple layers structure stacked alternately with zinc oxide and silicon or zinc oxide and indium oxide tin. Second, the material of forming the second connecting layer 50 can be soldering tin, low temperature metal, and metal silicide, such as PbSn, AuGe, AuBe, AuSi, Sn, In, and PdIn. Third, the material of forming the first connecting layer 100 can be polymer material like BCB, Epoxy, SOG, SU8, or oxide such as TiO₂, Ti₂O₅, Ta₂O₃, Ta₂O₅, ITO, AZO, ZnO, and Al₂O₃, or nitride such as SiONx, SiNx GaN, AlN, or diamond. As FIG. 13(a) shows, removing the first growth substrate (not shown in the figures) to expose the top surface of the first conductivity type semiconductor layer 20, then forming a regularly or an irregularly roughened surface by etch method. By etching from up the first conductivity type semiconductor layer 20 to down the active layer 30, a portion surface a of the second conductivity type semiconductor layer 40 is exposed, then by etching from up the first conductivity type semiconductor layer 20 down to the active layer 30, the second conductivity type semiconductor layer 40, the second connecting layer 50, the protecting layer 70, and the top surface b of the adhesive layer 80 is exposed. Forming an electrode A on the exposed surface a of the second conductivity type semiconductor layer 40 electrically connecting with the second conductivity type semiconductor layer 40. Forming a conductive structure 130 on the sidewall of the active layer 30, the second conductivity type semiconductor layer 40, the second connecting layer 50, and the protecting layer 70, then forming an electrode B covering the conductive structure to form the light-emitting diode 14. The conductivity type of the protecting layer 70 is different from the second conductivity type semiconductor layer 40 and can form a diode characteristic stack C to prevent the electric static discharge. The diode stack structure D is formed by the first conductivity type semiconductor layer 20, the active layer 30, and the second conductivity type semiconductor layer 40, and electrically connected to the diode characteristic stack in anti-parallel by the conductive structure 30, as FIG. 13(b) shows. As FIG. 13(c) shows, when the forward current flows from electrode A to electrode B, the current passes through the diode stack structure D formed by the second conductivity type semiconductor layer 40, the active layer 30, and the first conductivity type semiconductor layer 20 in sequence, and the light-emitting diode 14 is normal operation. As FIG. 13(d) shows, when the reverse current flows from electrode B to electrode A, the current passes through the diode stack structure C formed by the adhesive layer 80, the protecting layer 70, the second connecting layer 50, and the second conductivity type semiconductor layer 40 in sequence to prevent the electric static discharge. The current does not flow through the active layer 30 so the device structure having no breakdown by the reverse current is formed. The stack structure C formed by the protecting layer 70, the second connecting layer 50 and the second conductivity type semiconductor layer 40 is provided with a function to prevent the electric static discharge.

The embodiments of the above mentioned, the growth substrate is at least one material selected from the group consist of silicon carbide, gallium nitride, and aluminum nitride. The first conductivity type semiconductor layer, the active layer, ant the second conductivity type semiconductor layer of the above mentioned can be a single layer or multiple layers structure, such as super-lattice. Besides, the epitaxial structure of the application mentioned does not limit to growth in epitaxial method on the growth substrate, other forming methods such as directly connect or connect to a heat dispersion substrate by a medium in connecting method belong to the scope of the application.

It should be noted that the proposed various embodiments are not for the purpose to limit the scope of the invention. Any possible modifications without departing from the spirit of the invention may be made and should be covered by the application.

Claims

1. A light-emitting device comprising:

a heat dispersion substrate;

a first connecting layer on the heat dispersion substrate;

a protection layer on the first connecting layer wherein the protection layer is highly insulative;

a second connecting layer on the protection layer; and

a light-emitting unit comprising an epitaxial structure on the second connecting layer;

wherein the protection layer can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.

2. The light-emitting device according to claim 1, further comprising a reflection layer between the first connecting layer and the protection layer.

3. The light-emitting device according to claim 2, further comprising an adhesive layer between the reflection layer and the protection layer.

4. The light-emitting device according to claim 1, wherein the epitaxial structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

5. The light-emitting device according to claim 1, wherein the epitaxial structure comprising a roughened interface to increase the light extraction efficiency of the epitaxial structure.

6. The light-emitting device according to claim 1, wherein the protection layer comprising an undoped gallium nitride or an undoped III-V group material.

7. The light-emitting device according to claim 1, wherein the protection layer further comprising a first surface and a second surface wherein the area of the first surface is larger than the area of the second surface.

8. The light-emitting device according to claim 2, wherein the reflection layer comprising aluminum, silver, or other high reflectivity materials.

9. The light-emitting device according to claim 2, wherein the adhesive layer comprising indium tin oxide, zinc oxide.

10. The light-emitting device according to claim 1, wherein the first connecting layer comprising soldering tin, low temperature metal, and metal silicide.

11. The light-emitting device according to claim 1, wherein the second connecting layer comprising polymer material, oxide, nitride, or diamond.

12. An illumination unit comprising:

a heat dispersion substrate;

a first connecting layer on the heat dispersion substrate;

a protection layer on the first connecting layer;

a second connecting layer on the protection layer;

a micro chip illumination module on the second connecting layer, wherein the illumination module comprising at least two micro chips wherein each micro chip having an active layer; and

a conductive structure electrically connecting to each micro chip.

13. An illumination unit according to claim 12, further comprising a reflection layer between the first connecting layer and the protection layer.

14. An illumination unit according to claim 12, further comprising an adhesive layer between the reflection layer and the protection layer.

15. An illumination unit according to claim 12, wherein the protection layer comprising an undoped gallium nitride or an undoped III-V group material.

16. An illumination unit according to claim 13, wherein the reflection layer comprising aluminum, silver, or other high reflectivity materials.

17. An illumination unit according to claim 14, wherein the adhesive layer conductive structure electrically connecting to each micro chip comprising indium tin oxide or zinc oxide.

18. An illumination unit according to claim 12, wherein the conductive structure electrically connecting to each micro chip in series connection or parallel connection.

19. An illumination unit according to claim 12, wherein each of the at least two micro chips emits the same wavelength or the different wavelength.

20. An illumination unit according to claim 12, wherein the first connecting layer comprising soldering tin, low temperature metal, and metal silicide.

21. An illumination unit according to claim 12, wherein the second connecting layer comprising polymer material, oxide, nitride, or diamond.

22. A semiconductor device comprising:

a heat dispersion substrate;

a first connecting layer on the heat dispersion substrate;

a protection layer on the first connecting layer;

a second connecting layer on the protection layer;

a light-emitting diode on the second connecting layer; and

a conductive structure electrically connecting to the protection layer and the light-emitting diode in anti-parallel.

23. A semiconductor device according to claim 22, further comprising a reflection layer between the first connecting layer and the protection layer.

24. A semiconductor device according to claim 22, further comprising an adhesive layer between the reflection layer and the protection layer.

25. A semiconductor device according to claim 22, wherein the light-emitting diode comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

26. A semiconductor device according to claim 22, wherein the protection layer comprising a single layer structure of an undoped gallium nitride or an undoped III-V group material.

27. A semiconductor device according to claim 22, wherein the protection layer comprising a multiple layers structure stacked alternately with zinc oxide and silicon or zinc oxide and indium oxide tin.

28. A semiconductor device according to claim 22, wherein the reflection layer comprising aluminum, silver, or other high reflectivity materials.

29. A semiconductor device according to claim 22, wherein the first connecting layer comprising polymer material, oxide, nitride, or diamond.

30. A semiconductor device according to claim 22, wherein the second connecting layer comprising soldering tin, low temperature metal, and metal silicide.