Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.

Abstract: A strap tip structure includes a positioning fastener member and an outer cover. The positioning fastener member includes a mainbody, at least three clip members and an external screw structure. The at least three clip members are flexibly connected to the mainbody, and each of the clip members is an arc plate and has an end portion. The external screw structure is disposed on an outer surface of the mainbody. The outer cover is detachably connected to the positioning fastener member. The outer cover includes an inner space and an inner screw structure, and the inner screw structure matches the external screw structure. When the inner screw structure of the outer cover and the external screw structure of the positioning fastener member are screwed together, the positioning fastener member is accommodated in the inner space.

Abstract: A buckle device includes a female buckle and a male buckle. The female buckle includes a wall forming an inserting hole. The male buckle includes a male buckle body, two engaging portions, an elastic connecting element and an actuating element. The two engaging portions are disposed at the male buckle body in intervals and located at an inserting side of the male buckle body, and the two engaging portions are configured to engage with the inserting hole of the female buckle. The elastic connecting element is connected between the two engaging portions. The actuating element includes an actuating portion and a connecting string. One of two ends of the connecting string is connected to the actuating portion, and the other one of the two ends of the connecting string is connected to the elastic connecting element.

Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum.

Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: A semiconductor device having a plurality of layers that extend in an interface portion and a non-interface portion of at least one lateral aspect defined by a lateral axis of the device. A low(er)-index layer, that may comprise a low-index material, that has a first refractive index at a wavelength, is disposed on a first layer surface in at least the interface portion. A higher-index layer, that may comprise a high-index material, that has a second refractive index at a wavelength, is disposed on an exposed layer surface of the device, to define an index interface with the low(er)-index layer in the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on a second layer surface in the non-interface portion. The higher-index layer may cover the deposited material in the non-interface portion.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).

Abstract: An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.

Abstract: A phosphazene derivative compound including a chain moiety including a backbone and an attached fluorine atom and an opto-electronic device including such compound. The chain moiety includes an intermediate moiety, a terminal moiety arranged at a terminal portion of thereof bonded to the intermediate moiety, and/or a core moiety comprising a phosphazene unit attached to the chain moiety, including by a linker moiety of the chain moiety. The chain moiety attaches to the phosphorous atom of the unit and/r comprises a cyclophosphazene comprising a plurality of units. The device has two electrodes and an active region comprising a semiconducting layer bounded longitudinally by the electrodes and laterally confined to an emissive region defined thereby that lacks the compound. A device patterning coating includes the compound in a first lateral portion. The device has a deposited layer of deposited material, but the first portion lacks a closed coating of deposited material.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

Abstract: A layered panel extends in first and second portions of a lateral aspect, accepting electromagnetic signal(s) through the second portion. The first portion but not the second portion has a closed coating of deposited material. The second portion may comprise a nucleation-inhibiting coating (NIC) and/or a low refractive-index coating. An initial sticking probability for the deposited material of the NIC in the first portion may be less than 0.3, and/or the initial sticking probability for the deposited material on the underlying surface. A higher refractive-index medium may lie on the low refractive index coating. The second portion may comprise at least one particle structure comprised of the deposited material and/or a UVA-absorbing layer. The first portion may comprise emissive region(s) for emitting electromagnetic signal(s). The panel may comprise a substrate and semiconducting layer(s).

Abstract: An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.