Patents by Inventor Lumin Li
Lumin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11594400Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.Type: GrantFiled: April 10, 2020Date of Patent: February 28, 2023Assignee: Lam Research CorporationInventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
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Publication number: 20200243307Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.Type: ApplicationFiled: April 10, 2020Publication date: July 30, 2020Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
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Patent number: 10622195Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.Type: GrantFiled: April 3, 2012Date of Patent: April 14, 2020Assignee: Lam Research CorporationInventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony Dela Llera, Darrell Ehrlich
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Patent number: 9263240Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.Type: GrantFiled: March 15, 2012Date of Patent: February 16, 2016Assignee: Lam Research CorporationInventors: Alexei Marakhtanov, Rajinder Dhindsa, Ryan Bise, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera
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Patent number: 9111724Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.Type: GrantFiled: October 14, 2010Date of Patent: August 18, 2015Assignee: Lam Research CorporationInventors: Douglas Keil, Lumin Li, Reza Sadjadi, Eric Hudson, Eric Lenz, Rajinder Dhindsa
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Patent number: 8961145Abstract: A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed.Type: GrantFiled: March 12, 2013Date of Patent: February 24, 2015Assignee: Black & Decker Inc.Inventors: Sean D. Hill, Lumin Li
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Patent number: 8674255Abstract: A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.Type: GrantFiled: December 8, 2005Date of Patent: March 18, 2014Assignee: Lam Research CorporationInventors: Eric Lenz, Raj Dhindsa, Dave Trussell, Lumin Li
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Publication number: 20130266455Abstract: A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed.Type: ApplicationFiled: March 12, 2013Publication date: October 10, 2013Inventors: Sean D. Hill, Lumin Li
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Publication number: 20130126476Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.Type: ApplicationFiled: March 15, 2012Publication date: May 23, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Alexei Marakhtanov, Rajinder Dhindsa, Ryan Bise, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la LIera
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Publication number: 20130126486Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.Type: ApplicationFiled: April 3, 2012Publication date: May 23, 2013Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Naw, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony Dela Llera, Darrell Ehrlich
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Patent number: 8393873Abstract: A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed.Type: GrantFiled: January 24, 2011Date of Patent: March 12, 2013Assignee: Black & Decker Inc.Inventors: Sean D. Hill, Lumin Li
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Patent number: 8299390Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: GrantFiled: January 29, 2010Date of Patent: October 30, 2012Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Patent number: 8114246Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.Type: GrantFiled: August 25, 2006Date of Patent: February 14, 2012Assignee: Lam Research CorporationInventors: Tuqiang Ni, Wenli Collison, David Hemker, Lumin Li
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Patent number: 8080760Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.Type: GrantFiled: January 25, 2010Date of Patent: December 20, 2011Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
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Patent number: 8000082Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: GrantFiled: March 17, 2009Date of Patent: August 16, 2011Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Patent number: 7977390Abstract: A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.Type: GrantFiled: August 22, 2006Date of Patent: July 12, 2011Assignee: Lam Research CorporationInventors: Bing Ji, Erik A. Edelberg, Takumi Yanagawa, Zhisong Huang, Lumin Li
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Patent number: 7977242Abstract: A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.Type: GrantFiled: February 5, 2009Date of Patent: July 12, 2011Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Lumin Li, Andrew R. Romano
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Publication number: 20110123353Abstract: A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed.Type: ApplicationFiled: January 24, 2011Publication date: May 26, 2011Applicant: BLACK & DECKER INC.Inventors: Sean D. Hill, Lumin Li
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Publication number: 20110024045Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: Lam Research CorporationInventors: Douglas Keil, Lumin Li, Reza Sadjadi, Eric Hudson, Eric Lenz, Rajinder Dhindsa
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Publication number: 20110024046Abstract: An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: Lam Research CorporationInventors: Douglas Keil, Lumin Li, Reza Sadjadi, Eric Hudson, Eric Lenz, Rajinder Dhindsa