Abstract: A method for fabricating a wire bonding structure is disclosed, which includes: providing a substrate having a plurality of bonding pads; and foaming a ball end of a bonding wire on at least one of the bonding pads by performing a scrubbing process along a path around a periphery of the bonding pad, thereby preventing delamination of the ball end of small size from the bonding pad.

Abstract: A video stream transmission method is provided. The method has the following steps of: utilizing a video encoding apparatus to encode a plurality of first images to generate a video bitstream and transmit the video bitstream to the video decoding apparatus over a network; utilizing a video decoding apparatus to decode the video bitstream to generate a plurality of second images correspondingly; and when the video decoding apparatus detects that there is data loss of the video bitstream during transmission, utilizing the video decoding apparatus to reference a third image, which is the most recent completely decoded image of the plurality of second images, to perform subsequent video decoding processes and transmit a request signal to the video encoding apparatus, so that the video encoding apparatus references a fourth image, which corresponds to the third image, of the plurality of first images, to perform subsequent video encoding processes.

Abstract: A communication system and method are provided. In the communication system, a first electrical device has an end point which is configured to connect to a plurality of 3G dongles, wherein the 3G dongles have different IP addresses; a cloud server integrates the IP addresses to generate an integrated IP address when the cloud server detects that the first electrical device is connected to the 3G dongles; and a second electrical device transmits data packets with the first electrical device via the integrated IP address through the cloud server.

Abstract: A power management system and hierarchical power switches and sockets thereof are mainly used to divide power source of one area into multiple ratings, and to layup supply lines and set the hierarchical power switches and the control switch based on this rating, thus to control the supply state of each service rating in the area by the using of the hierarchical power switches and the control switch, and then form hierarchical management mechanism to achieve the effect of the energy conservation, improve the security of the electric power system at the same time; The hierarchical power sockets are set on the ends of the supply lines, and the load device can be provided to select the connection the supply line in different service rating, achieving the energy conservation of hierarchical power management and the security of regional electricity supply.

Abstract: A lock assembly has a body, a latching device, a linking device and a locking mechanism. The linking device is connected to and driven by the latching device. The locking mechanism is moveably mounted in the body and has a bolt base, a pushing element, a lever element and a locking bolt. The bolt base is mounted slidably in the body. The locking bolt is slidably mounted on the bolt base and is driven to retract into or completely extends out from the body with the transmission of the pushing element and the lever element.

Abstract: A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

Abstract: A method includes forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad. The polymer layer is patterned to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness. A surface treatment is performed to increase a roughness of the polymer layer to a second roughness greater than the first roughness. A metallic feature is formed over the exposed surface of the polymer layer.

Abstract: A magnetic locking apparatus has a body and an engaging mount. The body has a casing, a bolt and a driving device. The bolt is retractably mounted in the casing and has a connecting section, an engaging section and at least one magnetic element. The driving device is mounted in the casing and has a handle mount. The engaging mount faces the casing and the bolt and has a locking hole and at least one magnetic element mounted at two sides of the locking hole to attract the at least one magnetic element of the bolt.

Abstract: An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.

Abstract: The present invention discloses a multipurpose half bridge signal output circuit. The multipurpose half bridge signal output circuit is capable of selectively operating under a charge sharing mode or a gate pulsing modulation mode. The multipurpose half bridge signal output circuit includes: a first output pin; a second output pin; a first circuit zone having a first common end coupled to the first output pin; and a second circuit zone having a second common end coupled to the second output pin.

Abstract: A touch panel includes a plurality of driving lines, a plurality of sensing lines and a plurality of sensing units. The sensing lines are arranged intersecting with the driving lines. The sensing units are arranged in an array, and each of the sensing units is electrically coupled to a corresponding one of the driving lines and a corresponding one of the sensing lines. The driving lines or the sensing lines only pass through a single side of the touch panel.

Abstract: A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.

Abstract: A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

Abstract: Disclosed is a rotary nebulization device installed to a container that contains a liquid to be nebulized, and the rotary nebulization device includes a main body, an electric connection ring, an nebulization ring and a rotary ring. The main body contains a power supply, the electric connection ring, the nebulization ring and the rotary ring sequentially installed on a side of the main body, and the electric connection ring has a first contact electrically coupled to the power supply, and the nebulization ring has an nebulization module electrically coupled to the first contact, and the rotary ring has a second contact corresponding to the first contact. The corresponding container has an opening portion and a liquid storage slot, and the rotary ring is provided for switching the connection and electric conduction between the liquid storage slot and the nebulization module to improve the convenience of operation.

Abstract: An exemplary lead frame includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes a first connecting surface and a second connecting surface spaced from the first connecting surface. Top surfaces of the bonding electrode, the first connecting electrode and the second connecting electrode are exposed out of the substrate to support and electrically connect with light emitting chips. Light emitting chips can be mounted on the lead frame and electrically connect with each other in parallel or in series; thus, the light emitting chips can be connected with each in a versatile way.

Abstract: Disclosed is a constant quantity control nebulization device including a main body, a nebulization module, a fixing plate and a rotary ring, and the device is installed to a container that contains a liquid to be nebulized. A first liquid storage space with a predetermined volume is defined at the top of the main body, and the nebulization module is installed in the main body and interconnected to the first liquid storage space, and the fixing plate is fixed onto the main body and has a first through hole, the rotary ring is sheathed on the top of the main body and axially coupled to the fixing plate, and the rotary ring has a second through hole corresponding to the first through hole. The consumption of the liquid to be nebulized can be controlled by rotating the rotary ring to improve the convenience of operation significantly.

Abstract: A video conference system built in an internet protocol (IP) network is provided. The system has: a multimedia capturing unit configured to photograph and output a first video signal; a DECT telephone configured to receive sounds and output a first audio signal; and a video conference terminal apparatus, including: an audio processing unit is an audio codec; a video processing unit is an video codec; and a network processing unit for transmitting a first network packet consisting of first audio/video streams generated by the audio/video processing units to the IP network, wherein the network processing unit receives a second network packet consisting of second audio/video streams from the IP network, wherein the second audio/video streams are decoded by the audio/video processing units, respectively, to generate second audio/video signals, which are displayed on the DECT telephone and a display apparatus, respectively.

Abstract: A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the sidewalls of the opening. An epitaxial process is performed to form an epitaxial structure on the silicon area in the opening.

Abstract: A lock assembly has a body, a latching device, a linking device and a locking mechanism. The linking device is connected to and driven by the latching device. The locking mechanism is moveably mounted in the body and has a bolt base, a pushing element, a lever element and a locking bolt. The bolt base is mounted slidably in the body. The locking bolt is slidably mounted on the bolt base and is driven to retract into or completely extends out from the body with the transmission of the pushing element and the lever element.

Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate. An oxide layer is formed on the substrate without the fin-shaped structure being formed thereon. A gate is formed to cover a part of the oxide layer and a part of the fin-shaped structure. An etching process is performed to etch a part of the fin-shaped structure beside the gate, therefore at least a recess is formed in the fin-shaped structure. An epitaxial process is performed to form an epitaxial layer in the recess, wherein the epitaxial layer has a hexagon-shaped profile structure.