Abstract: A method for transferring semiconductor bodies and a semiconductor chip are disclosed.

Abstract: A method for producing a component may include providing a composite containing a semiconductor stack layer, a first exposed connection layer and a second exposed connection layer, where the connection layers are arranged on the semiconductor stack, assigned to different electrical polarities and are configured to electrically contact the component to be produced; forming a first through contact exposed in lateral directions on the first connection layer and a second through contact exposed in lateral directions on the second connection layer, where the through contacts are formed from an electrically conductive connection material; and applying a molded body material on the composite for forming a molded body, where each of the through contacts are fully and circumferentially enclosed by the molded body at least in the lateral directions, such that the molded body and the through contacts form a permanently continuous carrier which mechanically carries the component to be produced.

Abstract: A method for producing a component and a component are disclosed. In an embodiment a method includes providing a substrate, applying a composite of components to the substrate, forming an anchoring layer on the composite of components, attaching a carrier to the anchoring layer, wherein the anchoring layer is disposed between the substrate and the carrier and removing the substrate, wherein the composite of components is divided into a plurality of components by forming a plurality of separating trenches, wherein, after removing the substrate, the components continue to be held on the carrier by the anchoring layer, and wherein the anchoring layer comprises at least one predetermined breaking layer having at least one predetermined breaking position, the predetermined breaking position being laterally surrounded by the separating trenches and—in a plan view of the carrier—being covered by one of the components.

Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).

Abstract: Disclosed is an optoelectronic semiconductor chip (10) comprising: —a succession of semiconductor layers (1) that has a main plane of extension, an active layer (12) and a bottom surface (1c); —a substrate (41) that is arranged on the bottom surface (1c) of the succession of semiconductor layers (1) and has a base surface (41c) facing away from the bottom surface (1c); and —a succession of joining layers (3) which is arranged in at least some locations between the succession of semiconductor layers (1) and the substrate (41) in a vertical direction; wherein —the substrate (41) laterally protrudes from the succession of semiconductor layers (1) by a maximum of 10 ?m.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence.

Abstract: A method of producing a plurality of optoelectronic semiconductor components includes a) preparing a composite with a semiconductor layer sequence, wherein the composite includes a plurality of component areas mechanically connected to one another; b) forming a plurality of connecting surfaces on the semiconductor layer sequence, wherein at least one connecting surface is formed on each component area; c) forming a molding compound on the semiconductor layer sequence, wherein the molding compound fills interstices between the connecting surfaces; and d) singulating the composite with the molding compound, wherein during singulation a plurality of molded bodies is formed from the molding compound, each of which is associated with a semiconductor body obtained from a component area of the composite.

Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Abstract: A multi-chip module is disclosed. In an embodiment, a multi-chip module includes a first carrier including a mold material and at least two light-emitting diode chips embedded at least by side faces in the first carrier, wherein the light-emitting diode chips have first electrical contacts on a front side and second electrical contacts on a rear side, wherein the front side is configured as a radiation side, wherein the first electrical contacts are connected to control lines, wherein the control lines are arranged on a front side of the first carrier, wherein the second electrical contacts are connected to a collective line, and wherein the collective line is led to a rear side of the first carrier.

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

Abstract: A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). Furthermore, a first contact layer (5a) is provided which extends laterally along the first semiconductor layer (3a) and electrically contacts same. A third semiconductor layer (7) is applied onto a first contact layer (5a) face facing away from the semiconductor layer sequence (3). A recess (8) is formed which extends through the third semiconductor layer (7), the first contact layer (5a), and the first semiconductor layer (3a) into the second semiconductor layer (3b). A passivation layer (9) is applied onto a third semiconductor layer (7) face facing away from the semiconductor layer sequence (3). At least one first (9a) and at least one second passage opening (9b, 9c) are formed in the passivation layer (9).

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence.

Abstract: A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are disclosed. In an embodiment a light-emitting chip includes a semiconductor body having an active region designed to generate light, a dielectric mirror including an electrically insulating material and a first metallic mirror including an electrically conductive material, wherein the semiconductor body expands towards a light exit side, wherein the dielectric mirror is arranged on a side of the semiconductor body facing away from the light exit side, wherein the first metallic mirror is arranged on a side of the dielectric mirror facing away from the semiconductor body, wherein the first metallic mirror electrically contacts the semiconductor body through at least one opening in the dielectric mirror, and wherein the dielectric mirror, apart from the at least one opening, completely covers the semiconductor body on the side facing away from the light exit side.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). Furthermore, a first contact layer (5a) is provided which extends laterally along the first semiconductor layer (3a) and electrically contacts same. A third semiconductor layer (7) is applied onto a first contact layer (5a) face facing away from the semiconductor layer sequence (3). A recess (8) is formed which extends through the third semiconductor layer (7), the first contact layer (5a), and the first semiconductor layer (3a) into the second semiconductor layer (3b). A passivation layer (9) is applied onto a third semiconductor layer (7) face facing away from the semiconductor layer sequence (3). At least one first (9a) and at least one second passage opening (9b, 9c) are formed in the passivation layer (9).

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

Abstract: An optoelectronic semiconductor chip includes a carrier and a semiconductor body having an active layer that generates electromagnetic radiation, wherein the semiconductor body is arranged on the carrier, the semiconductor body has a first main surface facing away from the carrier and a second main surface facing the carrier, the semiconductor chip has a side surface having an anchoring structure, and the second main surface is arranged between the first main surface and the anchoring structure.