Abstract: What is specified is: a lighting apparatus, with a piezoelectric transformer (1), which has a mounting face (10), on which at least two output-side connection points (11) are arranged, and at least one substrateless light-emitting diode (2), which is designed to generate electromagnetic radiation, wherein the at least one substrateless light-emitting diode (2) is fitted at least indirectly to the mounting face (10) and fastened mechanically to the mounting face (10), and the at least one substrateless light-emitting diode (2) is electrically conductively connected to at least two of the output-side connection points (11).

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged, wherein the first surface adjoins a molded body, a first pin and a second pin are embedded in the molded body and electrically conductively connect to the first contact and the second contact, and a protection diode is embedded in the molded body and electrically conductively connect to the first contact and the second contact.

Abstract: An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.

Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support having a support top side, a semiconductor layer sequence having an active layer for generating electromagnetic radiation, wherein the active layer is located between an n-type n-layer and a p-type p-layer of the semiconductor layer sequence, wherein the semiconductor layer sequence, as seen in a plan view of the support top side, is patterned into emitter regions arranged next to one another and electrical conductor tracks located on a side of the semiconductor layer sequence facing away from the support, where the electrical conductor tracks include contact surfaces. The chip further includes an n-contact point and a p-contact point for electrically contacting the semiconductor chip, wherein the emitter regions are electrically connected in series via the at least two conductor tracks.

Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

Abstract: An optoelectronic component has a semiconductor body including an epitaxial layer sequence, and a carrier substrate consisting of a semiconductor material connected to the semiconductor body by a solder layer, and through-connections. The carrier substrate includes a surface doping zone extending along a first main surface facing the semiconductor body. The surface doping zone includes a p-conductive region and an n-conductive region adjacent thereto, between which regions a pn-junction is formed. The n-conductive region electrically connects to a p-doped region of the epitaxial layer sequence via a first sub-region of the solder layer, and the p-conductive region electrically connects to an n-doped region of the epitaxial layer sequence via a second sub-region of the solder layer.

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.

Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

Abstract: A light-emitting diode chip is specified, comprising an n-conducting region (1), a p-conducting region (2), an active region (3) between the n-conducting region (1) and the p-conducting region (2), a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region (3), an encapsulation layer (5) at that side of the mirror layer (4) which is remote from the p-conducting region (2), and a contact layer (6) at a side of the encapsulation layer (5) which is remote from the mirror layer (4), wherein the encapsulation layer (5) extends along a bottom area (43) of the mirror layer (4) which is remote from the p-conducting region (2) and a side area (42) of the mirror layer (4) which runs transversely with respect to the bottom area (43), and the contact layer (6) is freely accessible in places from its side facing the n-conducting region (1).

Abstract: An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer.

Abstract: A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).

Abstract: An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.

Abstract: A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected at the latter.