Patents by Inventor Lutz Höppel
Lutz Höppel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8482026Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.Type: GrantFiled: July 6, 2010Date of Patent: July 9, 2013Assignee: OSRAM Opto Semiconductors GmbHInventor: Lutz Höppel
-
Publication number: 20130140598Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4),arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4),in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).Type: ApplicationFiled: May 26, 2011Publication date: June 6, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Lutz Höppel, Norwin Von Malm
-
Patent number: 8450751Abstract: An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.Type: GrantFiled: April 24, 2008Date of Patent: May 28, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Patrick Rode, Lutz Hoeppel, Matthias Sabathil
-
Publication number: 20130043496Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.Type: ApplicationFiled: January 17, 2011Publication date: February 21, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Sabathil, Norwin von Malm, Lutz Hoeppel, Stefan Illek, Bernd Barchmann, Patrick Rode
-
Patent number: 8362506Abstract: An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.Type: GrantFiled: August 27, 2008Date of Patent: January 29, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Patrick Rode, Karl Engl, Martin Strassburg, Lutz Hoeppel, Matthias Sabathil
-
Publication number: 20120322186Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.Type: ApplicationFiled: August 30, 2012Publication date: December 20, 2012Applicant: Osram Opto Semiconductors GmbHInventors: Patrick Rode, Martin Strassburg, Karl Engl, Lutz Höppel
-
Publication number: 20120299049Abstract: An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.Type: ApplicationFiled: September 10, 2010Publication date: November 29, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Patrick Rode, Lutz Höppel, Norwin von Malm, Matthias Sabathil, Jürgen Moosburger
-
Patent number: 8319250Abstract: A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).Type: GrantFiled: April 17, 2009Date of Patent: November 27, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Patrick Rode, Lutz Hoeppel, Karl Engl, Tony Albrecht
-
Patent number: 8314415Abstract: A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.Type: GrantFiled: June 20, 2008Date of Patent: November 20, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Hoeppel, Matthias Sabathil, Matthias Peter, Uwe Strauss
-
Publication number: 20120280207Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.Type: ApplicationFiled: July 11, 2012Publication date: November 8, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Adrian AVRAMESCU, Volker Härle, Lutz Höppel, Matthias Peter, Matthias Sabathil, Uwe Strauss
-
Patent number: 8283191Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.Type: GrantFiled: June 9, 2009Date of Patent: October 9, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Patrick Rode, Martin Strassburg, Karl Engl, Lutz Höppel
-
Publication number: 20120098025Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.Type: ApplicationFiled: July 6, 2010Publication date: April 26, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Lutz Höppel
-
Publication number: 20120098016Abstract: An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.Type: ApplicationFiled: June 10, 2010Publication date: April 26, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Lutz Höppel, Norwin von Malm
-
Publication number: 20120086026Abstract: An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.Type: ApplicationFiled: February 25, 2009Publication date: April 12, 2012Inventors: Karl Engl, Patrick Rode, Lutz Hoeppel, Martin Strassburg
-
Publication number: 20120037930Abstract: A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures, D) removing the separating structures, E) applying, a protective layer at least on lateral areas of copper layers, F) applying an auxiliary substrate on the copper layers, G) removing the growth substrate, H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.Type: ApplicationFiled: April 3, 2009Publication date: February 16, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Lutz Höppel
-
Publication number: 20110316028Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).Type: ApplicationFiled: September 16, 2009Publication date: December 29, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Hoeppel, Matthias Peter, Ulrich Zehnder, Tetsuya Taki, Andreas Leber, Rainer Butendeich, Thomas Bauer
-
Publication number: 20110284893Abstract: A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).Type: ApplicationFiled: June 29, 2009Publication date: November 24, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Lutz Hoeppel, Matthias Sabathil
-
Publication number: 20110278641Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.Type: ApplicationFiled: October 12, 2009Publication date: November 17, 2011Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Vincent Grolier, Lutz Hoeppel, Hans-Jürgen Lugauer, Martin Strassburg, Andreas Biebersdorf
-
Publication number: 20110272728Abstract: A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).Type: ApplicationFiled: April 17, 2009Publication date: November 10, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Patrick Rode, Lutz Hoeppel, Karl Engl, Tony Albrecht
-
Publication number: 20110260205Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.Type: ApplicationFiled: October 29, 2009Publication date: October 27, 2011Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Jürgen Moosburger, Norwin Von Malm, Patrick Rode, Lutz Höppel, Karl Engl