Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus in which a plurality of pixels are arranged is provided. Each of the plurality of pixels includes an avalanche photodiode arranged between a first potential supply line and a second potential supply line, a first switch element arranged between the first potential supply line and the avalanche photodiode, a second switch element arranged between the first switch element and the avalanche photodiode, a capacitive element including a first terminal and a second terminal connected to a first node that connects the first switch element and the second switch element, and a detection circuit configured to detect occurrence of avalanche breakdown of the avalanche photodiode in accordance with a change of a potential of a second node that connects the second switch element and the avalanche photodiode.

Abstract: A photoelectric conversion device including pixels arranged in a semiconductor layer including first and second main surfaces is provided. Each of the pixels includes a first photodiode including a first region of a first conductivity type where signal charges are accumulated, a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region, and including a second region of the first conductivity type where signal charges are accumulated, a third region of a second conductivity type arranged between the first and second region, and a first electrode arranged on the first main surface so as to cover the first region. Signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.

Abstract: A photoelectric conversion apparatus in which a plurality of pixels are arranged is provided. Each of the plurality of pixels includes an avalanche photodiode arranged between a first potential supply line and a second potential supply line, a first transistor arranged so as to form a current path between the first potential supply line and the avalanche photodiode, and a holding circuit configured to, when avalanche breakdown of the avalanche photodiode has occurred, hold a second potential corresponding a first potential of an electrode of the avalanche photodiode connected to the first transistor. The second potential is supplied to a gate of the first transistor from the holding circuit.

Abstract: Provided is a photoelectric conversion device including: at least one charge holding portion including a first semiconductor region of a first conductivity type and configured to hold signal charges based on incident light; and an avalanche photodiode including a second semiconductor region of the first conductivity type, in which the signal charges are transferred from the first semiconductor region to the second semiconductor region via a third semiconductor region of a second conductivity type that is different from the first conductivity type, a fourth semiconductor region of the first conductivity type, and a fifth semiconductor region of the second conductivity type in this order.

Abstract: A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

Abstract: An apparatus includes a first semiconductor region of a first conductivity type configured to collect a signal charge, and a connection region of a second conductivity type configured to feed a predetermined potential to a well including a second semiconductor region of the second conductivity type at a depth to which the connection region extends, a third semiconductor region of the second conductivity type at a position deeper than the connection region and the second semiconductor region, and a fourth semiconductor region between the second semiconductor region and the third semiconductor region, wherein a dopant for use in forming a semiconductor region of the first conductivity type is injected in the fourth semiconductor region, and a main carrier of the fourth semiconductor region is a carrier of the same conductivity type as a majority carrier of a semiconductor region of the second conductivity type.

Abstract: A photoelectric conversion apparatus comprises a semiconductor layer including a first surface and a second surface, a first semiconductor region of a first conductivity type arranged in the semiconductor layer and configured to accumulate a signal charge generated by incident light, a second semiconductor region of the first conductivity type arranged in the semiconductor layer, a first transfer electrode configured to transfer the signal charge accumulated in the first semiconductor region to the second semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, and a fourth semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface. The third semiconductor region at least partially overlaps, in orthographic projection to the first surface, the second semiconductor region and the fourth semiconductor region.

Abstract: A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

Abstract: A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.

Abstract: A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

Abstract: A photoelectric conversion device includes a substrate provided with pixels each including a photoelectric converter that accumulates charge generated by an incidence of light, a charge holding portion that holds charge transferred from the photoelectric converter, and an amplifier unit that includes an input node that receives charge transferred from the charge holding portion, a metal film disposed over a side of a first surface of the substrate so as to cover at least the charge holding portion, and a trench structure provided in the substrate on the side of the first surface of the substrate. The photoelectric conversion device is configured such that the light is incident from the side of the first surface of the substrate. The trench structure is disposed between the photoelectric converter and the charge holding portion of a first pixel.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit that generates signal charge of a first polarity and a charge conversion circuit that converts the signal charge into a signal voltage. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that are provided in a surface side of a semiconductor substrate, a third semiconductor region of the first conductivity type provided at a first depth, a fourth semiconductor region of the second conductivity type provided at a second depth and overlaps the second semiconductor region in a plan view, and a fifth semiconductor region of the first conductivity type provided at a third depth, and the third semiconductor region and the fifth semiconductor region overlap the first semiconductor region, the second semiconductor region, and the fourth semiconductor region in the plan view.

Abstract: A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

Abstract: A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

Abstract: A photoelectric conversion apparatus comprises a semiconductor layer including a first surface and a second surface, a first semiconductor region of a first conductivity type arranged in the semiconductor layer and configured to accumulate a signal charge generated by incident light, a second semiconductor region of the first conductivity type arranged in the semiconductor layer, a first transfer electrode configured to transfer the signal charge accumulated in the first semiconductor region to the second semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, and a fourth semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface. The third semiconductor region at least partially overlaps, in orthographic projection to the first surface, the second semiconductor region and the fourth semiconductor region.

Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.

Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.