Abstract: Provided is a photoelectric conversion device including: at least one charge holding portion including a first semiconductor region of a first conductivity type and configured to hold signal charges based on incident light; and an avalanche photodiode including a second semiconductor region of the first conductivity type, in which the signal charges are transferred from the first semiconductor region to the second semiconductor region via a third semiconductor region of a second conductivity type that is different from the first conductivity type, a fourth semiconductor region of the first conductivity type, and a fifth semiconductor region of the second conductivity type in this order.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A light detection apparatus according to an embodiment includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type, a third semiconductor region having the first conductivity type, and a circuit unit configured to count the number of generation times of an avalanche current, wherein a reverse bias voltage for causing avalanche multiplication of the signal charge is applied to the second semiconductor region and the third semiconductor region, and the signal charge is accumulated in the first semiconductor region when the potential barrier is formed, wherein the control unit controls the height of the potential barrier.

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: An apparatus includes a first semiconductor region of a first conductivity type configured to collect a signal charge, and a connection region of a second conductivity type configured to feed a predetermined potential to a well including a second semiconductor region of the second conductivity type at a depth to which the connection region extends, a third semiconductor region of the second conductivity type at a position deeper than the connection region and the second semiconductor region, and a fourth semiconductor region between the second semiconductor region and the third semiconductor region, wherein a dopant for use in forming a semiconductor region of the first conductivity type is injected in the fourth semiconductor region, and a main carrier of the fourth semiconductor region is a carrier of the same conductivity type as a majority carrier of a semiconductor region of the second conductivity type.

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: A photoelectric conversion device includes a photoelectric converter accumulating signal charge generated by photoelectric conversion in the first semiconductor region of a first conductivity type, a charge-to-voltage converter generating a voltage signal in accordance with amount of the signal charge, a transistor of a second conductivity type provided in a third semiconductor region of the first conductivity type and including a gate connected to the first semiconductor region, and a voltage supply circuit supplying voltage to the source and drain of the transistor. The voltage supply circuit supplies voltage that causes gate capacitance of the transistor to be a first capacitance value when signal charge accumulated in the first semiconductor region correspond to first amount and cause the gate capacitance to be a second capacitance value when signal charge accumulated in the first semiconductor region correspond to second amount.

Abstract: A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit that generates signal charge of a first polarity and a charge conversion circuit that converts the signal charge into a signal voltage. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that are provided in a surface side of a semiconductor substrate, a third semiconductor region of the first conductivity type provided at a first depth, a fourth semiconductor region of the second conductivity type provided at a second depth and overlaps the second semiconductor region in a plan view, and a fifth semiconductor region of the first conductivity type provided at a third depth, and the third semiconductor region and the fifth semiconductor region overlap the first semiconductor region, the second semiconductor region, and the fourth semiconductor region in the plan view.

Abstract: An image sensing apparatus is provided. The apparatus comprises pixels each including a photoelectric conversion element arranged in a semiconductor layer which has a first surface and a second surface and a wiring layer arranged below the first surface. Each of the pixels includes a first reflection film arranged below the first surface, an interlayer film arranged so as to cover the second surface, a second reflection film arranged inside the interlayer film and a microlens which is arranged above the interlayer film. An aperture is arranged in a portion, of the second reflection film, which overlaps the photoelectric conversion element. An area of the aperture is smaller than an area of the photoelectric conversion element, and each of the pixels further includes a deflecting portion configured to deflect light between the aperture and the second surface.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A light detection apparatus according to an embodiment includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type, a third semiconductor region having the first conductivity type, and a circuit unit configured to count the number of generation times of an avalanche current, wherein a reverse bias voltage for causing avalanche multiplication of the signal charge is applied to the second semiconductor region and the third semiconductor region, and the signal charge is accumulated in the first semiconductor region when the potential barrier is formed, wherein the control unit controls the height of the potential barrier.

Abstract: A photoelectric conversion device includes a photoelectric converter accumulating signal charge generated by photoelectric conversion in the first semiconductor region of a first conductivity type, a charge-to-voltage converter generating a voltage signal in accordance with amount of the signal charge, a transistor of a second conductivity type provided in a third semiconductor region of the first conductivity type and including a gate connected to the first semiconductor region, and a voltage supply circuit supplying voltage to the source and drain of the transistor. The voltage supply circuit supplies voltage that causes gate capacitance of the transistor to be a first capacitance value when signal charge accumulated in the first semiconductor region correspond to first amount and cause the gate capacitance to be a second capacitance value when signal charge accumulated in the first semiconductor region correspond to second amount.

Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.