Abstract: A solid-state imaging apparatus includes a photoelectric conversion unit for generating and accumulating an electric charge according to an incident light, a floating diffusion for accumulating electric charges, a transfer transistor for transferring electric charges accumulated in the photoelectric conversion unit to the floating diffusion unit, and a reset transistor for resetting a voltage according to electric charges accumulated in the floating diffusion unit. In addition, a drive circuit intermittently applies to a gate of the transfer transistor a pulse having a first potential which is intermediate between a transfer potential for transferring electric charges and a non-transfer potential for disabling transfer of electric charges and applies to a gate of the reset transistor a second potential lower than the potential of the pulse for resetting voltage of the floating diffusion unit and higher than the first potential, during accumulation of electric charges in the photoelectric conversion unit.

Abstract: A solid-state image pickup apparatus includes a pixel area in which pixels each having at least a photoelectric conversion unit and an amplification transistor for amplifying and outputting a signal of the photoelectric conversion unit are two-dimensionally arranged in horizontal and vertical directions, wherein a power supply wiring, which extends in a vertical direction along pixel boundaries of horizontal and vertical directions while meandering, is arranged on one of two pixel lines adjoining to each other in the horizontal direction in the pixel area, and the power supply wiring is connected to one of a source and a drain of the amplification transistor on each of the two pixel lines. Thus, it is possible to provide a high-sensitivity and high-image-quality amplified solid-state image pickup apparatus in which a difference of sensitivities at one-line intervals is small.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.

Abstract: A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

Abstract: A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: A solid-state image sensor includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that is arranged to contact a lower face of the first semiconductor region and functions as a charge accumulation region, a third semiconductor region including side faces surrounded by the second semiconductor region, a fourth semiconductor region of the second conductivity type that is arranged apart from the second semiconductor region, and a transfer gate that forms a channel to transfer charges accumulated in the second semiconductor region to the fourth semiconductor region. The third semiconductor region is one of a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type whose impurity concentration is lower than that in the second semiconductor region.

Abstract: To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: A photoelectric conversion device includes an isolation portion defining an active region, a photoelectric converter arranged in the active region and including a charge accumulation region containing an impurity of a first conductivity type, a charge voltage converter arranged in the active region, and a transfer electrode arranged on the active region and configured to form a channel to transfer charges generated by the photoelectric converter to the charge voltage converter. In addition, a first semiconductor region is arranged in the active region between the photoelectric converter and the charge voltage converter and is covered with the transfer electrode and contains the impurity of the first conductivity type at a concentration lower than that in the charge accumulation region. A second semiconductor region extends in the active region along an interface of the isolation portion facing at least the first semiconductor region and is of a second conductivity type.

Abstract: A solid-state image pickup device includes a voltage supply circuit configured to supply a voltage to load MOS transistors provided to vertical output lines and columnar signal-processing circuits. The voltage supply circuit includes a first amplifier circuit configured to amplify a predetermined voltage supplied to an input part thereof from a voltage generator and to output an amplified voltage to a voltage supply wire, and a sample-and-hold circuit including a sampling switch provided on a path between the voltage generator and the input part and a hold capacitor configured to hold the voltage sampled by the sampling switch.

Abstract: In a photoelectric conversion device, a first metal wiring layer and a second metal wiring layer are arranged on a semiconductor substrate that includes a pixel region where a plurality of pixels are arrayed in a matrix, each pixel including at least a photoelectric conversion portion and an amplification transistor. The second metal wiring layer includes power supply lines each configured to supply a power supply voltage to the amplification transistors of at least two pixel columns, and the amplification transistor of a pixel column having no power supply line receives the power supply voltage from the power supply line via the first metal wiring layer.

Abstract: A solid-state image pickup device includes a voltage supply circuit configured to supply a voltage to load MOS transistors provided to vertical output lines and columnar signal-processing circuits. The voltage supply circuit includes a first amplifier circuit configured to amplify a predetermined voltage supplied to an input part thereof from a voltage generator and to output an amplified voltage to a voltage supply wire, and a sample-and-hold circuit including a sampling switch provided on a path between the voltage generator and the input part and a hold capacitor configured to hold the voltage sampled by the sampling switch.

Abstract: A photoelectric conversion apparatus is disclosed. A photoelectric conversion apparatus includes a pixel array in which pixels including photoelectric conversion units are arrayed in a row direction and a column direction, a plurality of first column signal lines which are electrically connected to the pixels arrayed in the pixel array in the column direction, respectively, a plurality of column amplification units which amplify signals provided via the plurality of the first column signal lines, respectively, a power supply line which provides a power supply voltage to the plurality of column amplification units, and a plurality of second column signal lines which are electrically connected to output sides of the plurality of column amplification units, respectively. Each column amplification unit includes a current limiting unit which limits the flow of an excessive current to each of the plurality of second column signal lines.

Abstract: A photoelectric conversion device comprises an isolation portion defining an active region, a photoelectric converter arranged in the active region and including a charge accumulation region containing an impurity of a first conductivity type, a photoelectric converter arranged in the active region, a transfer electrode arranged on the active region and configured to form a channel to transfer charges generated by the photoelectric converter to the charge voltage converter, a first semiconductor region arranged in the active region between the photoelectric converter and the charge voltage converter, the first semiconductor region being covered with the transfer electrode and containing the impurity of the first conductivity type at a concentration lower than that in the charge accumulation region; and a second semiconductor region extending in the active region along an interface of the isolation portion facing at least the first semiconductor region, the second semiconductor region being of a second conduct

Abstract: For inhibiting blooming, a solid-state imaging apparatus comprises a photoelectric conversion unit for generating and accumulating an electric charge according to an incident light; a floating diffusion for accumulating electric charges; a transfer transistor for transferring electric charges accumulated in the photoelectric conversion unit to the floating diffusion unit; a reset transistor for resetting a voltage according to electric charges accumulated in the floating diffusion unit; and a drive circuit for intermittently applying to a gate of the transfer transistor a pulse having a first potential which is intermediate between a transfer potential for transferring electric charges and a non-transfer potential for disabling transfer of electric charges and applying to a gate of the reset transistor a second potential lower than the potential of the pulse for resetting voltage of the floating diffusion unit and higher than the first potential, during accumulation of electric charges in the photoelectric co

Abstract: A solid-state image pickup device including a photoelectric conversion element, a floating diffusion, and an element isolation region that are disposed above a first semiconductor region has a second semiconductor region of a first conductivity type disposed on the first semiconductor region. An interface between the first semiconductor region and a portion of the second semiconductor region corresponding to the photoelectric conversion element is located at a first depth, whereas the interface between the first semiconductor region and a portion of the second semiconductor region disposed under the element isolation region and the floating diffusion is located at a second depth smaller than the first depth.

Abstract: A solid-state image pickup device is provided that includes coupling capacitors, a memory unit, amplifiers, and a circuit for removing an output offset. The capacitors reduce pixel noise by clamping signals from the pixels. The amplifiers amplify signal voltages from the coupling capacitors and write the amplified signal voltages to analog memory cells of the memory unit. The circuit removes the output offset of an amplifier and an analog memory cell.