Patents by Inventor Maik Stegemann
Maik Stegemann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230332969Abstract: A pressure sensing device includes a deflectable membrane structure to provide a deflection dependent output signal based on a pressure load, and a mechanical abutment structure for adjusting a spring constant of the deflectable membrane structure depending on the deflection of the deflectable membrane structure, wherein the mechanical abutment structure provides an abutting condition of the deflectable membrane structure when the deflection of the deflectable membrane structure exceeds a deflection threshold, wherein the abutting condition results in a change from a first spring constant to an increased, second spring constant of the deflectable membrane structure.Type: ApplicationFiled: April 11, 2023Publication date: October 19, 2023Inventors: Marco Haubold, Mirko Vogt, Maik Stegemann, Marco Müller, Anita Förster, Anne Boitier-Mahlberg
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Patent number: 11594654Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.Type: GrantFiled: August 30, 2021Date of Patent: February 28, 2023Assignee: Infineon Technologies AGInventors: Andre Roeth, Henning Feick, Heiko Froehlich, Thoralf Kautzsch, Olga Khvostikova, Stefano Parascandola, Thomas Popp, Maik Stegemann, Mirko Vogt
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Patent number: 11545561Abstract: A MOSFET includes a semiconductor body having a first side, a drift region, a body region forming a first pn-junction with the drift region, a source region forming a second pn-junction with the body region, in a vertical cross-section, a dielectric structure on the first side and having an upper side; a first gate electrode, a second gate electrode, a contact trench between the first and second gate electrodes, extending through the dielectric structure to the source region, in a horizontal direction a width of the contact trench has, in a first plane, a first value, and, in a second plane, a second value which is at most about 2.5 times the first value, and a first contact structure arranged on the dielectric structure having a through contact portion arranged in the contact trench, and in Ohmic contact with the source region.Type: GrantFiled: December 28, 2020Date of Patent: January 3, 2023Assignee: Infineon Technologies Austria AGInventors: Andreas Riegler, Wolfgang Jantscher, Manfred Pippan, Maik Stegemann
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Publication number: 20220326275Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.Type: ApplicationFiled: June 28, 2022Publication date: October 13, 2022Applicant: Infineon Technologies AGInventors: Thoralf KAUTZSCH, Steffen BIESELT, Heiko FROEHLICH, Andre ROETH, Maik STEGEMANN, Mirko VOGT, Bernhard WINKLER
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Patent number: 11422151Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.Type: GrantFiled: April 28, 2020Date of Patent: August 23, 2022Inventors: Thoralf Kautzsch, Steffen Bieselt, Heiko Froehlich, Andre Roeth, Maik Stegemann, Mirko Vogt, Bernhard Winkler
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Patent number: 11393714Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.Type: GrantFiled: July 7, 2020Date of Patent: July 19, 2022Assignee: Infineon Technologies AGInventors: Andre Roeth, Boris Binder, Thoralf Kautzsch, Uwe Rudolph, Maik Stegemann, Mirko Vogt
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Publication number: 20220069156Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.Type: ApplicationFiled: August 30, 2021Publication date: March 3, 2022Inventors: Andre Roeth, Henning Feick, Heiko Froehlich, Thoralf Kautzsch, Olga Khvostikova, Stefano Parascandola, Thomas Popp, Maik Stegemann, Mirko Vogt
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Patent number: 11078072Abstract: A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.Type: GrantFiled: April 29, 2020Date of Patent: August 3, 2021Inventors: Thoralf Kautzsch, Steffen Bieselt, Heiko Froehlich, Andre Roeth, Maik Stegemann, Mirko Vogt
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Publication number: 20210151584Abstract: A MOSFET includes a semiconductor body having a first side, a drift region, a body region forming a first pn-junction with the drift region, a source region forming a second pn-junction with the body region, in a vertical cross-section, a dielectric structure on the first side and having an upper side; a first gate electrode, a second gate electrode, a contact trench between the first and second gate electrodes, extending through the dielectric structure to the source region, in a horizontal direction a width of the contact trench has, in a first plane, a first value, and, in a second plane, a second value which is at most about 2.5 times the first value, and a first contact structure arranged on the dielectric structure having a through contact portion arranged in the contact trench, and in Ohmic contact with the source region.Type: ApplicationFiled: December 28, 2020Publication date: May 20, 2021Inventors: Andreas Riegler, Wolfgang Jantscher, Manfred Pippan, Maik Stegemann
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Patent number: 10903341Abstract: A method for manufacturing a MOSFET semiconductor device includes providing a wafer including a semiconductor body having a first side, a first semiconductor region adjacent to the first side, a second semiconductor region adjacent to the first side and forming a first pn-junction with the first semiconductor region, and a third semiconductor region adjacent to the first side and forming a second pn-junction with the second semiconductor region, a first dielectric layer arranged on the first side, a gate electrode embedded in the first dielectric layer, and a second dielectric layer arranged on the first dielectric layer. Next to the gate electrode, a trench is formed through the first dielectric layer and the second dielectric layer. At a side wall of the trench, a dielectric spacer is formed. The trench is extended into the semiconductor body to form a contact trench.Type: GrantFiled: September 10, 2018Date of Patent: January 26, 2021Assignee: Infineon Technologies Austria AGInventors: Andreas Riegler, Wolfgang Jantscher, Manfred Pippan, Maik Stegemann
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Publication number: 20210013087Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.Type: ApplicationFiled: July 7, 2020Publication date: January 14, 2021Inventors: Andre ROETH, Boris BINDER, Thoralf KAUTZSCH, Uwe RUDOLPH, Maik STEGEMANN, Mirko VOGT
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Patent number: 10870575Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.Type: GrantFiled: June 29, 2018Date of Patent: December 22, 2020Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Horst Theuss, Bernhard Knott, Thoralf Kautzsch, Mirko Vogt, Maik Stegemann, Andre Roeth, Marco Haubold, Heiko Froehlich, Wolfram Langheinrich, Steffen Bieselt
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Publication number: 20200300886Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.Type: ApplicationFiled: April 28, 2020Publication date: September 24, 2020Applicant: Infineon Technologies AGInventors: Thoralf KAUTZSCH, Steffen BIESELT, Heiko FROEHLICH, Andre ROETH, Maik STEGEMANN, Mirko VOGT, Bernhard WINKLER
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Publication number: 20200290867Abstract: A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.Type: ApplicationFiled: April 29, 2020Publication date: September 17, 2020Applicant: Infineon Technologies Dresden GmbH & Co. KGInventors: Thoralf KAUTZSCH, Steffen BIESELT, Heiko FROEHLICH, Andre ROETH, Maik STEGEMANN, Mirko VOGT
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Publication number: 20200253000Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.Type: ApplicationFiled: April 24, 2020Publication date: August 6, 2020Inventors: Thoralf Kautzsch, Heiko Froehlich, Uwe Rudolph, Alessia Scire, Maik Stegemann, Mirko Vogt
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Patent number: 10683203Abstract: A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.Type: GrantFiled: April 12, 2018Date of Patent: June 16, 2020Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Steffen Bieselt, Heiko Froehlich, Andre Roeth, Maik Stegemann, Mirko Vogt
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Patent number: 10684306Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.Type: GrantFiled: July 1, 2016Date of Patent: June 16, 2020Assignee: Infineon Technologies AGInventors: Steffen Bieselt, Heiko Froehlich, Thoralf Kautzsch, Andre Roeth, Maik Stegemann, Mirko Vogt, Bernhard Winkler
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Patent number: 10681777Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.Type: GrantFiled: March 17, 2017Date of Patent: June 9, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Thoralf Kautzsch, Heiko Froehlich, Uwe Rudolph, Alessia Scire, Maik Stegemann, Mirko Vogt
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Patent number: 10544037Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.Type: GrantFiled: January 19, 2018Date of Patent: January 28, 2020Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Heiko Froehlich, Alessia Scire, Maik Stegemann, Bernhard Winkler, Andre Roeth, Steffen Bieselt, Mirko Vogt
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Publication number: 20200002159Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.Type: ApplicationFiled: June 29, 2018Publication date: January 2, 2020Inventors: Horst THEUSS, Bernhard Knott, Thoralf Kautzsch, Mirko Vogt, Maik Stegemann, Andre Roeth, Marco Haubold, Heiko Froehlich, Wolfram Langheinrich, Steffen Bieselt