Abstract: A semiconductor module includes a die pad area between positions where a plurality of power terminals are arranged and positions where an HVIC and an LVIC are arranged. A plurality of RC-IGBTs are arranged in the die pad area at positions closer to the plurality of power terminals than to the HVIC and the LVIC.

Abstract: A power module includes: a power chip; a control chip controlling the power chip; a power terminal connected to the power chip; a control terminal connected to the control chip; and a package covering the power chip, the control chip, the power terminal, and the control terminal with mold resin, wherein first and second recesses for attaching a fin are respectively provided on side faces facing each other of the package from which neither the power terminal nor the control terminal protrudes, and the first and second recesses are arranged not at positions opposite to each other but alternately.

Abstract: It is an object to provide a technique capable of providing a semiconductor device with information indicating a plurality of electrical characteristics. A semiconductor device sorting system includes a characteristic measurement unit measuring electrical characteristics of a semiconductor device, a rank determination database for classifying the electrical characteristics into ranks, a calculation unit classifying the plurality of electrical characteristics of the semiconductor device measured by the characteristic measurement unit into a plurality of ranks with reference to the rank determination database, a writing unit converting the plurality of ranks classified by the calculation unit into a graphic symbolic code and forming the graphic symbolic code on the semiconductor device, a reading unit reading the plurality of ranks from the graphic symbolic code formed on the semiconductor device, and a sorting unit sorting the semiconductor device based on the plurality of ranks being read by the reading unit.

Abstract: A power module includes a connection terminal for external connection, the connection terminal protruding from the side surface of a package, and a dummy terminal protruding from the side surface of the package and shorter than the connection terminal. The dummy terminal is processed to have a bottom surface with an inclination. In other words, the distance between a plane containing a heat dissipation surface of the package and the dummy terminal increases toward the extremity of the dummy terminal. Accordingly, when a heat dissipation fin is attached to the heat dissipation surface, the extremity of the dummy terminal is more distant from the heat dissipation fin than the rest of the dummy terminal.

Abstract: A semiconductor module includes a die pad area between positions where a plurality of power terminals are arranged and positions where an HVIC and an LVIC are arranged. A plurality of RC-IGBTs are arranged in the die pad area at positions closer to the plurality of power terminals than to the HVIC and the LVIC.

Abstract: A power module includes a connection terminal for external connection, the connection terminal protruding from the side surface of a package, and a dummy terminal protruding from the side surface of the package and shorter than the connection terminal. The dummy terminal is processed to have a bottom surface with an inclination. In other words, the distance between a plane containing a heat dissipation surface of the package and the dummy terminal increases toward the extremity of the dummy terminal. Accordingly, when a heat dissipation fin is attached to the heat dissipation surface, the extremity of the dummy terminal is more distant from the heat dissipation fin than the rest of the dummy terminal.

Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Abstract: An absorbent article having a front end region, a rear end region, a central region disposed between the front and rear end regions, a fluids source area, and a transverse axis and a longitudinal axis. The absorbent article includes a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a reinforcing structure disposed within the central region. In one aspect of the invention, the reinforcing structure includes a pair of traverse reinforcing elements each of which is formed by two traverse channels. The two traverse channels may be disposed generally parallel to the transverse axis with a reinforcement distance such that the absorbent core has an average density of in the range of about 5% to about 500% higher at the traverse reinforcing element than the fluids source area.

Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Abstract: A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.

Abstract: An absorbent article having a front end region, a rear end region, a central region disposed between the front and rear end regions, a fluids source area, and a transverse axis and a longitudinal axis. The absorbent article includes a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a reinforcing structure disposed within the central region. In one aspect of the invention, the reinforcing structure includes a pair of traverse reinforcing elements each of which is formed by two traverse channels. The two traverse channels may be disposed generally parallel to the transverse axis with a reinforcement distance such that the absorbent core has an average density of in the range of about 5% to about 500% higher at the traverse reinforcing element than the fluids source area.

Abstract: An absorbent article having a front end region, a rear end region, a central region disposed between the front and rear end regions, a fluids source area, and a transverse axis and a longitudinal axis. The absorbent article includes a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a reinforcing structure disposed within the central region. In one aspect of the invention, the reinforcing structure includes a pair of traverse reinforcing elements each of which is formed by two traverse channels. The two traverse channels may be disposed generally parallel to the transverse axis with a reinforcement distance such that the absorbent core has an average density of in the range of about 5% to about 500% higher at the traverse reinforcing element than the fluids source area.

Abstract: A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.

Abstract: An absorbent article having a front end region, a rear end region, a central region disposed between the front and rear end regions, a fluids source area, and a transverse axis and a longitudinal axis. The absorbent article includes a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a reinforcing structure disposed within the central region. In one aspect of the invention, the reinforcing structure includes a pair of traverse reinforcing elements each of which is formed by two traverse channels. The two traverse channels may be disposed generally parallel to the transverse axis with a reinforcement distance such that the absorbent core has an average density of in the range of about 5% to about 500% higher at the traverse reinforcing element than the fluids source area.

Abstract: An absorbent article having a front end region, a rear end region, a central region disposed between the front and rear end regions, a fluids source area, and a transverse axis and a longitudinal axis. The absorbent article includes a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a reinforcing structure disposed within the central region. In one aspect of the invention, the reinforcing structure includes a pair of traverse reinforcing elements each of which is formed by two traverse channels. The two traverse channels may be disposed generally parallel to the transverse axis with a reinforcement distance such that the absorbent core has an average density of in the range of about 5% to about 500% higher at the traverse reinforcing element than the fluids source area.