Power semiconductor device

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Description

FIG. 1 is a front, right side, bottom perspective view of a power semiconductor device showing our new design;

FIG. 2 is a rear, left side, top perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top plan view thereof; and,

FIG. 8 is a bottom plan view thereof.

The broken lines shown represent unclaimed subject matter of a power semiconductor device and form no part of the claimed design.

Claims

The ornamental design for a power semiconductor device, as shown and described.

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Patent History
Patent number: D770994
Type: Grant
Filed: Jun 20, 2016
Date of Patent: Nov 8, 2016
Assignee: MITSUBISHI ELECTRIC CORPORATION (Tokyo)
Inventors: Maki Hasegawa (Tokyo), Masahiro Kato (Tokyo), Shinya Nakagawa (Tokyo), Hisashi Kawafuji (Tokyo), Toru Iwagami (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/568,592