Power semiconductor device
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Description
The broken lines shown represent unclaimed subject matter of a power semiconductor device and form no part of the claimed design.
Claims
The ornamental design for a power semiconductor device, as shown and described.
Referenced Cited
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Patent History
Patent number: D772182
Type: Grant
Filed: Sep 29, 2014
Date of Patent: Nov 22, 2016
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Maki Hasegawa (Tokyo), Masahiro Kato (Tokyo), Shinya Nakagawa (Tokyo), Hisashi Kawafuji (Tokyo), Toru Iwagami (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/503,649
Type: Grant
Filed: Sep 29, 2014
Date of Patent: Nov 22, 2016
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Maki Hasegawa (Tokyo), Masahiro Kato (Tokyo), Shinya Nakagawa (Tokyo), Hisashi Kawafuji (Tokyo), Toru Iwagami (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/503,649
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)