Abstract: A method of preparing a ring-formed body comprises the steps of: forming, on a substrate, a column in a columnar form which serves as a core of a ring-formed body; depositing, on both the substrate and the column, a ring-formed body forming film for forming the ring-formed body so that the ring-formed body forming film formed on the substrate and that formed on the column are separated from each other; forming a mask film for covering the ring-formed body forming film; and subjecting the mask film and ring-formed body forming film to anisotropic dry etching so that the films remain on a sidewall of the column, forming a ring-formed body comprised of the ring-formed body forming film having the mask film.

Abstract: A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.

Abstract: A magnetic storage device is disclosed by which reduction of the power consumption and stabilization of a writing characteristic can be achieved. The magnetic storage device includes a plurality of magnetic tunnel junction elements having different coercive forces from each other, and electric current corresponding to the coercive force is supplied to each magnetic tunnel junction element. More particularly, the magnetic storage device includes a plurality of storage element sets each including a magnetic tunnel junction element, and a plurality of power supplies for individually supplying writing currents corresponding to coercive forces of the magnetic tunnel junction elements of the storage element sets. The magnetic tunnel junction element of at least one of the storage element sets has a coercive force different from that of the magnetic tunnel junction element of the other storage element set.

Abstract: Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time.

Abstract: A magnetic memory device having a TMR element with high performance and high reliability, which can prevent oxidation or reduction of a tunnel dielectric layer in the TMR element. A nonvolatile magnetic memory device (1) includes a TMR element (13) configured by sandwiching a tunnel dielectric layer (303) between a ferromagnetic magnetization pinned layer (302) and a ferromagnetic storage layer (304), wherein information is stored by utilizing a change in resistance according to whether the direction of spins in the ferromagnetic layers (302) and (304) are parallel or antiparallel. The magnetic memory device (1) further includes a write word line (11) as a first wiring and a bit line (12) as a second wiring intersecting each other at different levels with the TMR element (13) interposed therebetween. The write word line (11) is electrically insulated from the TMR element (13), and the bit line (12) is electrically connected to the TMR element (13).

Abstract: An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.

Abstract: A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.

Abstract: An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.

Abstract: A magnetic memory device is proposed in which: a tunnel magnetic resistance effect element is configured by stacking a fixed magnetic layer whose direction of magnetization is fixed, a tunnel barrier layer, and a free magnetic layer whose direction of magnetization is variable in this order; and a second wiring is arranged opposite to the tunnel magnetic resistance effect element via an insulating layer on the side opposite a first wiring electrically connected to the tunnel magnetic resistance effect element, wherein a third wiring for reading electrically connected to the tunnel magnetic resistance effect element on the same side as the second wiring with respect to the tunnel magnetic resistance effect element is disposed within a connecting hole which is formed in an electrically isolated state with the second wiring while penetrating at least part of an area of the second wiring.

Abstract: In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a TMR device therebetween, a first mask to be a mask shape for the TMR device is formed, the TMR device is formed by use of the first mask as a mask, thereafter a second mask to be used for forming a wiring for connecting the TMR device to a wiring on the lower side thereof is formed while causing at least a part of the second mask to overlap with the first mask so that the first mask becomes a mask at one end side of the wiring, and a connection wiring for connecting the TMR device to the wiring on the lower side thereof is formed by use of the first and second masks.

Abstract: A high-capacity magnetic memory device in which the magnetic field for writing is nearly uniform for all memory elements. It is realized by reducing the deformation of resist pattern which occurs in photolithography when mask patterns are close to each other. The magnetic memory device is an MRAM composed of a large number of memory cells, each including one TMR element, one transistor for reading (selection), and reading plugs that connect the TMR element to the transistor for reading (selection). These memory cells are arranged such that the TMR elements are in a pattern of translational symmetry. For writing, memory cells are connected by the bit lines and the writing word lines which intersect orthogonally. The long axis of the TMR element is oriented aslant 45° with respect to these lines, so that the TMR elements are capable of toggle-mode writing.

Abstract: The MRAM has a transistor for selection, a lower insulating interlayer, a first connecting hole, a first wiring formed on the lower insulating interlayer, a tunnel magnetoresistance device formed on the first wiring through an insulating film, an upper insulating interlayer, and a second wiring, in which a lower surface of the tunnel magnetoresistance device is electrically connected to the first connecting hole through a second connecting hole, and the tunnel magnetoresistance device, the insulating film and the first wiring have nearly the same widths along the second direction.

Abstract: A non-volatile magnetic memory device is proposed, which provides sufficient magnetic shielding performance for external magnetic fields. A first magnetic shield layer 60a and a second magnetic shield layer 60b, both made of a soft magnetic metal, are formed respectively on the bottom surface of the transistor section 20, which is the mounting side of the MRAM device 10, and on the top surface of the bit line 50, which is opposite to the bottom surface of the mounting side of the MRAM device 10. On the second magnetic shield layer 60a, a passivation film 70 is formed. The magnetic flux penetrated from the external magnetic field, is suppressed below the inversion strength of the MRAM device 10, thereby improving reliability.

Abstract: Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time.

Abstract: Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time.

Abstract: A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device (1) is composed of the TMR element (13), the writing word line (the first wiring) (11) which is electrically insulated from the TMR element (13), and the bit line (the second wiring) (12) which is electrically connected to the TMR element (13) and intersecting three-dimensionally with the writing word line (11), with the TMR element (13) interposed therebetween. The magnetic memory device (1) is characterized as follows. The magnetic flux concentrator (51) of high-permeability layer is formed along at least the lateral sides of the writing word line (11) and the side of the writing word line (11) which is opposite to the side facing the TMR element (13).

Abstract: A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.

Abstract: There are disclosed an information storage apparatus and an electronic device mounting the information storage apparatus, wherein when the electronic device mounting an information storage element utilizing a magnetized direction control of a ferromagnetic material, for example a MRAM, receives something strong magnetic field, an erroneous storing of the information is prevented by preventing an influence of the magnetic field to a storage layer. In an information storage apparatus (1) equipped with an information storage element (12) for storing information by utilizing a magneto-resistive effect, a resin material (13) used when the information storage element (12) is mounted is the one being mixed up a high-permeability material, or the information storage element (12) is the one formed with a high-permeability material film or a thin film including a high-permeability material on a part or an entire front surface thereof.

Abstract: In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a TMR device therebetween, a first mask to be a mask shape for the TMR device is formed, the TMR device is formed by use of the first mask as a mask, thereafter a second mask to be used for forming a wiring for connecting the TMR device to a wiring on the lower side thereof is formed while causing at least a part of the second mask to overlap with the first mask so that the first mask becomes a mask at one end side of the wiring, and a connection wiring for connecting the TMR device to the wiring on the lower side thereof is formed by use of the first and second masks.

Abstract: A magnetic storage device is disclosed by which reduction of the power consumption and stabilization of a writing characteristic can be achieved. The magnetic storage device includes a plurality of magnetic tunnel junction elements having different coercive forces from each other, and electric current corresponding to the coercive force is supplied to each magnetic tunnel junction element. More particularly, the magnetic storage device includes a plurality of storage element sets each including a magnetic tunnel junction element, and a plurality of power supplies for individually supplying writing currents corresponding to coercive forces of the magnetic tunnel junction elements of the storage element sets. The magnetic tunnel junction element of at least one of the storage element sets has a coercive force different from that of the magnetic tunnel junction element of the other storage element set.