Abstract: Described herein is a technique capable of reducing a thermal damage to a furnace opening structure when processing a substrate at a high temperature. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube provided with a furnace opening; heaters provided respectively in a plurality of zones arranged along a tube axis direction; temperature sensors respectively corresponding to the zones; a temperature controller configured to control electric power based on temperature data obtained by the temperature sensors, wherein the temperature controller is configured to, when the substrates are subject to a heat treatment process by the heaters, control the electric power supplied to the heaters such that temperatures of upper heaters about as high as the substrates reach predetermined temperatures, and that a temperature gradient is formed in lower zones lower than the substrates such that a temperature decreases toward the furnace opening.

Abstract: There is provided a technique that includes: a cylindrical outer tube; an inner tube that is installed inside the outer tube and configured such that a substrate is capable of being processed in a process chamber formed in the inner tube; a manifold that is installed below the outer tube and the inner tube, in fluid communication with an internal space of the inner tube, and formed in a cylindrical shape with an exhaust space isolated from an annular space between the inner tube and the outer tube; a process gas nozzle configured to supply a process gas that processes the substrate to an inside of the inner tube; a purge gas nozzle configured to supply a purge gas to the annular space; and a conductance changer that is installed at a partition wall between the annular space and the exhaust space.

Abstract: Described herein is a substrate processing technique of preventing particle generation while lowering an inner pressure of a nozzle and improving a film thickness uniformity. According to one aspect thereof, a substrate processing apparatus includes a boat for supporting substrates; an inner tube surrounding the boat and provided with an exhaust hole through which a gas is exhausted along a direction orthogonal to an arrangement direction of the substrates; a mixing structure for generating a mixed gas for processing the substrates; and a nozzle installed apart from an inner lateral surface of the inner tube and through which the mixed gas supplied from the mixing structure is discharged into the inner tube via discharge holes arranged at the nozzle along the arrangement direction of the substrates. A discharge direction of each of the discharge holes is not toward the boat but toward the inner lateral surface of the inner tube.

Abstract: Described herein is a technique capable of reducing a thermal damage to a furnace opening structure when processing a substrate at a high temperature. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube provided with a furnace opening; heaters provided respectively in a plurality of zones arranged along a tube axis direction; temperature sensors respectively corresponding to the zones; a temperature controller configured to control electric power based on temperature data obtained by the temperature sensors, wherein the temperature controller is configured to, when the substrates are subject to a heat treatment process by the heaters, control the electric power supplied to the heaters such that temperatures of upper heaters about as high as the substrates reach predetermined temperatures, and that a temperature gradient is formed in lower zones lower than the substrates such that a temperature decreases toward the furnace opening.

Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.

Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.