Abstract: A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n+-type silicon carbide semiconductor substrate, plural p base layers selectively formed in surfaces of the silicon carbide epitaxial layers, a p-type silicon carbide epitaxial layer formed in the silicon carbide epitaxial layer, and a trench penetrating at least the silicon carbide epitaxial layer. The silicon carbide semiconductor element also includes, in a portion of the silicon carbide epitaxial layer, a mesa portion exposing the p base layer. The silicon carbide semiconductor element further includes, between consecutive mesa side faces of the mesa portion, a flat portion substantially parallel to the silicon carbide substrate. The remaining thickness of the exposed p base layer is larger than 0.5 ?m and smaller than 1.0 ?m.

Abstract: A gate trench of a MOS gate formed in the front surface of a silicon carbide substrate includes a first portion that includes the bottom surface of the gate trench, a second portion that is connected to the substrate front surface side of the first portion, and a third portion that is connected to the substrate front surface side of the second portion. In the third portion of the gate trench, an n+ source region is exposed along the sidewalls. The width of the third portion of the gate trench is greater than the widths of the first and second portions and of the gate trench. Upper corners of the gate trench smoothly connect the sidewalls to the substrate front surface. The thickness of a gate insulating film smoothly connected along the bottom surface and sidewalls of the gate trench is substantially uniform over the entire inner wall surface of the gate trench.

Abstract: A MOS gate is provided on a front surface side of a silicon carbide substrate. The silicon carbide substrate includes silicon carbide layers sequentially formed on an n+-type starting substrate by epitaxial growth. Of the silicon carbide layers, a p+-type silicon carbide layer is a p+-type high-concentration base region and is separated into plural regions by a trench. A p-type silicon carbide layer among the silicon carbide layers covers the p+-type silicon carbide layer and is embedded in the trench. A p-type silicon carbide layer among the silicon carbide layers is a p-type base region. From a substrate front surface, a gate trench penetrates the p-type base region in the trench and the n+-type source region to reach an n?-type drift region. Between the p+-type high-concentration base region and a gate insulating film at a sidewall of the gate trench, the p-type base region is embedded in the trench.

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray absorbing film is composed of one of a multi-layered film of titanium nitride and titanium, a multi-layered film of molybdenum nitride and molybdenum, a multi-layered film of tungsten nitride and tungsten, or a multi-layered film of chromium nitride and chromium. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Abstract: An interlayer insulating film is formed on a gate insulating film and a gate electrode, and the interlayer insulating film is opened forming contact holes. Next, the interlayer insulating film and regions exposed by the contact holes are covered by a titanium nitride film, and the titanium nitride film is etched to remain only at portions of the gate insulating film and the interlayer insulating film exposed in the contact holes. The interlayer insulating film and the regions exposed by the contact holes are covered by a nickel film, and after the nickel film directly contacting the interlayer insulating film 8 is removed, the nickel film is heat treated and a nickel silicide layer is formed.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.

Abstract: An interlayer insulating film is formed on a gate insulating film and a gate electrode, and the interlayer insulating film is opened forming contact holes. Next, the interlayer insulating film and regions exposed by the contact holes are covered by a titanium nitride film, and the titanium nitride film is etched to remain only at portions of the gate insulating film and the interlayer insulating film exposed in the contact holes. The interlayer insulating film and the regions exposed by the contact holes are covered by a nickel film, and after the nickel film directly contacting the interlayer insulating film 8 is removed, the nickel film is heat treated and a nickel silicide layer is formed.

Abstract: An ion implantation mask, which is an inorganic insulating film, is formed on a silicon carbide substrate. A mask portion and two regions of an opened ion implantation portion are formed in the ion implantation mask by dry etching. At that time, a residual portion which is thinner than the mask portion is formed in the bottom of the opened ion implantation portion. Then, ions are implanted through the ion implantation mask to form a predetermined semiconductor region in the silicon carbide substrate. According to this structure, it is possible to prevent an increase in the roughness of the surface of the silicon carbide substrate and to improve breakdown voltage.

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Abstract: An ion implantation mask, which is an inorganic insulating film, is formed on a silicon carbide substrate. A mask portion and two regions of an opened ion implantation portion are formed in the ion implantation mask by dry etching. At that time, a residual portion which is thinner than the mask portion is formed in the bottom of the opened ion implantation portion. Then, ions are implanted through the ion implantation mask to form a predetermined semiconductor region in the silicon carbide substrate. According to this structure, it is possible to prevent an increase in the roughness of the surface of the silicon carbide substrate and to improve breakdown voltage.

Abstract: A semiconductor device includes a substrate, a channel layer that is formed above the substrate, where the channel layer is made of a first nitride series compound semiconductor, a barrier layer that is formed on the channel layer, a first electrode that is formed on the barrier layer, and a second electrode that is formed above the channel layer. Here, the barrier layer includes a block layers and a quantum level layer. The block layer is formed on the channel layer and made of a second nitride series compound semiconductor having a larger band gap energy than the first nitride series compound semiconductor, and the quantum level layer is made of a third nitride series compound semiconductor having a smaller band gap energy than the second nitride series compound semiconductor, and has a quantum level formed therein.

Abstract: Provided is a semiconductor device that has a buffer layer with which a dislocation density is decreased. The semiconductor device includes a substrate, a buffer region formed over the substrate, an active layer formed on the buffer region, and at least two electrodes formed on the active layer. The buffer region includes at least one composite layer in which a first semiconductor layer having a first lattice constant, a second semiconductor layer having a second lattice constant that is different from the first lattice constant and formed in contact with the first semiconductor layer, and a third semiconductor layer having a third lattice constant that is between the first lattice constant and the second lattice constant are sequentially laminated.

Abstract: Provided is a semiconductor device that includes a substrate, a first buffer region formed over the substrate, a second buffer region formed on the first buffer region, an active layer formed on the second buffer region, and at least two electrodes formed on the active layer. The first buffer region includes at least one composite layer in which a first semiconductor layer and a second semiconductor layer are sequentially stacked. The second buffer region in includes at least one composite layer in which a third semiconductor layer, a fourth semiconductor layer, and a fifth semiconductor layer are sequentially stacked. The fourth lattice constant has a value between the third lattice constant and the fifth lattice constant.

Abstract: An organic EL device has an organic EL element provided on a substrate and includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer for moisture protection, and a protective substrate laminated onto the organic EL element via an adhesive layer. The protective layer is a laminated body including first through nth layers, in order, from a side close to the upper electrode (where n is an integer equal to or greater than 3). Each layer of the protective layer includes silicon oxynitride or silicon nitride, and two adjacent layers layer have different chemical compositions. The first layer has a refractive index smaller than that of the upper electrode and the nth layer has a refractive index larger than that of the adhesive layer. The refractive index (k) of the kth layer satisfies a relationship: refractive index (k?1)>refractive index (k).

Abstract: An organic EL device has an organic EL element provided on a substrate and includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer for moisture protection, and a protective substrate laminated onto the organic EL element via an adhesive layer. The protective layer is a laminated body including first through nth layers, in order, from a side close to the upper electrode (where n is an integer equal to or greater than 3). Each layer of the protective layer includes silicon oxynitride or silicon nitride, and two adjacent layers layer have different chemical compositions. The first layer has a refractive index smaller than that of the upper electrode and the nth layer has a refractive index larger than that of the adhesive layer. The refractive index (k) of the kth layer satisfies a relationship: refractive index (k?1)>refractive index (k).

Abstract: A color conversion type multi-color organic EL display panel is provided in which the lifetime of an organic EL light emitter is improved by preventing migration of moisture to the organic EL light emitter and dispersing heat generated during driving well. The display utilizes a color-converting/filter substrate that includes a transparent supporting substrate, color-converting/filter layers of a single type or a plurality of types arranged on the supporting substrate, a polymeric film layer that covers the color-converting/filter layers and is formed transparent and flat, and a transparent inorganic film layer that is formed on the polymeric film layer. The inorganic film layer is a laminate of one or a plurality of metallic film(s) or metal oxide film(s), and one or a plurality of insulating film(s) each containing at least one of Si and Al and at least one of O and N.

Abstract: A color conversion filter substrate includes a transparent support substrate; color conversion filter layers formed of a resin film containing a fluorescent colorant and formed on the support substrate in a desired pattern; a polymeric film layer formed of a transparent material for covering the support substrate and having a flat surface; a transparent inorganic film layer formed on the polymeric film layer; and a transparent electrode layer formed on the inorganic film layer. The inorganic film layer is formed of a single layer, and has a refractive index n smaller than that of the transparent electrode layer with respect to light with a wavelength &lgr; in a range from 450 nm to 500 nm, and has a thickness d defined by nd=s&lgr;/2, wherein s is a natural number.

Abstract: A color conversion filter substrate includes a transparent support substrate; color conversion filter layers formed of a resin film containing a fluorescent colorant and formed on the support Substrate in a desired pattern; a polymeric film layer formed of a transparent material for covering the support substrate and having a flat surface; a transparent inorganic film layer formed on the polymeric film layer; and a transparent electrode layer formed on the inorganic film layer. The inorganic film layer is formed of a single layer, and has a refractive index n smaller than that of the transparent electrode layer with respect to light with a wavelength &lgr; in a range from 450 nm to 500 nm, and has a thickness d defined by nd s&lgr;/2, wherein s is a natural number.

Abstract: A color conversion filter substrate includes a transparent support substrate; a single type or a plurality of types of color conversion filter layers formed of a resin film containing a fluorescent colorant and formed on the support substrate in a desired pattern; a polymeric layer formed of a transparent material and having a flat surface for covering the color conversion filter layer; and a transparent inorganic layer formed on the polymeric layer. The inorganic layer contains silicon and at least one of oxygen and nitrogen and has a hydrogen-to-silicon atomic ratio less than 1.

Abstract: A color conversion type multi-color organic EL display panel is provided in which the lifetime of an organic EL light emitter is improved by preventing migration of moisture to the organic EL light emitter and dispersing heat generated during driving well. The display utilizes a color-converting/filter substrate that includes a transparent supporting substrate, color-converting/filter layers of a single type or a plurality of types arranged on the supporting substrate, a polymeric film layer that covers the color-converting/filter layers and is formed transparent and flat, and a transparent inorganic film layer that is formed on the polymeric film layer. The inorganic film layer is a laminate of one or a plurality of metallic film(s) or metal oxide film(s), and one or a plurality of insulating film(s) each containing at least one of Si and Al and at least one of O and N.