Abstract: A wiring member includes a wiring body and a pattern. The wiring body includes a plurality of wire-like transmission members and a base material. The plurality of wire-like transmission members are fixed to the base material in an aligned state, and the pattern is provided on the wiring body. The pattern makes a two-dimensional position of at least a part of a portion related to the base material recognizable in the wiring body.

Abstract: An image forming apparatus includes an image forming device to form an image on an image bearer based on a prescribed image-forming condition, and circuitry to change the prescribed image-forming condition and correct image-density unevenness in an image-width direction orthogonal to an image conveyance direction of the image bearer. In the image forming apparatus, the circuitry calculates a corrective value of the prescribed image-forming condition for each one of positions in the image-width direction, based on unevenness-in-density corrective values for the multiple positions in the image-width direction and relational values indicating a relation between the multiple unevenness-in-density corrective values and the corrective value of the prescribed image-forming condition, and the circuitry corrects the image-density unevenness in the image-width direction based on the corrective value of the prescribed image-forming condition.

Abstract: Provided is a cooling device using the vaporization heat of water, the cooling device capable of eliminating the need for a continuous supply of a large amount of water from the outside and reducing an environmental load. A cooling device 1 which cools a cooling target object 3 using vaporization heat of water includes: an air circulation mechanism 10 including an air circulation path 11 including a target object cooling section 11a for cooling the cooling target object 3 with the air mixed with the atomized water and an air cooling section 11b for cooling the heated air; and a water circulation mechanism 20 including a discharge portion 21 for discharging the water in the target object cooling section 11b, a tank 22 for collecting water condensed in the air cooling section 10b, and a pump 22 for delivering the water in the tank 22 to the discharge portion 21.

Abstract: A semiconductor device includes a substrate, a gate structure, a source region, a drain region, a doped region, and a channel region. The gate structure is disposed in the substrate, and the source region and drain regions being a first conductivity type respectively disposed at two sides of the gate structure. The doped region being a second conductivity type different from the first conductivity type is disposed below and separated from the gate structure, the source region, and drain region, the doped region. The channel region is disposed between the doped region and the gate structure and in contact with the doped region, and a dopant concentration of the channel region is less than a dopant concentration of the doped region.

Abstract: Provided is a cable holding device including: a housing includes a terminal having a crimping portion, a cable holding member includes an insertion hole and a guide portion, the crimping portion is insertable into the cable holding member through the insertion hole, the guide portion is provided in the insertion hole, has such a recessed shape that the crimping portion inserted into the insertion hole is fittable therein, and an inner wall of the guide portion includes a first inner wall and a second inner wall provided on a far side with respect to the first inner wall in the insertion hole, and a horizontal width of the second inner wall is set smaller than a horizontal width of the first inner wall such that the second inner wall restricts expansion of a horizontal width of the crimping portion when the crimping portion crimps the cable.

Abstract: Provided is a cable holding member including: a main body; a through-hole; and a cover portion, wherein the through-hole is configured to allow a cable to be inserted therethrough the main body, a part of the cover portion is configured to, upon the cover portion being bent relative to the main body, be capable of covering a plane intersecting with a direction where the cable is inserted, at an opening end face of an opening portion of the through-hole, the main body includes a latch portion, the cover portion includes a cantilever elastic piece having a latched portion, and it is configured in such a manner that upon the cover portion being bent relative to the main body, the elastic piece is elastically displaced at least in a direction along the direction where the cable is inserted, and the latched portion is capable of being latched to the latch portion.

Abstract: A semiconductor device includes a substrate, a gate structure, a source region, a drain region, a doped region, and a channel region. The gate structure is disposed in the substrate, and the source region and drain regions being a first conductivity type respectively disposed at two sides of the gate structure. The doped region being a second conductivity type different from the first conductivity type is disposed below and separated from the gate structure, the source region, and drain region, the doped region. The channel region is disposed between the doped region and the gate structure and in contact with the doped region, and a dopant concentration of the channel region is less than a dopant concentration of the doped region.

Abstract: Provided is a cable holding member which includes: an insulated main body; a through-hole; a bend portion; and a cover portion, in which the through-hole is configured to allow a cable to be inserted therethrough from one end side toward the other side of the main body, the cover portion is configured in such a manner as to be bendable relative to the main body along the bend portion, and at least a part of the cover portion is configured to, upon the cover portion being bent relative to the main body, be capable of covering a plane intersecting with a direction where the cable is inserted, at an opening end face of an opening portion of the through-hole, the opening end face being located on the other end side, or a vicinity thereof.

Abstract: An image forming apparatus includes an image forming device to form an image on an image bearer based on a prescribed image-forming condition, and circuitry to change the prescribed image-forming condition and correct image-density unevenness in an image-width direction orthogonal to an image conveyance direction of the image bearer. In the image forming apparatus, the circuitry calculates a corrective value of the prescribed image-forming condition for each one of positions in the image-width direction, based on unevenness-in-density corrective values for the multiple positions in the image-width direction and relational values indicating a relation between the multiple unevenness-in-density corrective values and the corrective value of the prescribed image-forming condition, and the circuitry corrects the image-density unevenness in the image-width direction based on the corrective value of the prescribed image-forming condition.

Abstract: The present invention provides a sintered metal friction material that has excellent wear resistance, heat resistance even at high load and has a higher friction coefficient while maintaining a friction coefficient and wear resistance that are hard to decrease, and has a reduced content of copper of less than 5 mass %. There is provided a sintered metal friction material characterized in that the sintered metal friction material comprises a sintered material of a friction material composition, the friction material composition comprises matrix metals and a friction modifier, the matrix metals comprise following 20 to 40 mass % of iron powder, 20 to 40 mass % of nickel powder, 0.5 to 10 mass % of zinc powder, 0.5 to 5 mass, of tin powder, 0.5 to 4 mass % of copper powder and 0.5 to 5 mass % of sintering assist powder.

Abstract: A semiconductor device includes a substrate, a gate structure, a source region, a drain region, a doped region, and a channel region. The gate structure is disposed in the substrate, and the source region and drain regions being a first conductivity type respectively disposed at two sides of the gate structure. The doped region being a second conductivity type different from the first conductivity type is disposed below and separated from the gate structure, the source region, and drain region, the doped region. The channel region is disposed between the doped region and the gate structure and in contact with the doped region, and a dopant concentration of the channel region is less than a dopant concentration of the doped region.

Abstract: Provided is a cable holding member which includes: an insulated main body; a through-hole; a bend portion; and a cover portion, in which the through-hole is configured to allow a cable to be inserted therethrough from one end side toward the other side of the main body, the cover portion is configured in such a manner as to be bendable relative to the main body along the bend portion, and at least a part of the cover portion is configured to, upon the cover portion being bent relative to the main body, be capable of covering a plane intersecting with a direction where the cable is inserted, at an opening end face of an opening portion of the through-hole, the opening end face being located on the other end side, or a vicinity thereof.

Abstract: A cover member includes a first cover part and a second cover part. The first cover part includes: a mount surface on which a main body of a cable connector is mounted; a periphery wall which is provided to lie substantially along an outer edge of the main body of the cable connector mounted on the mount surface and which is raised from the mount surface toward a side on which the first cover part is combined with the second cover part; a cable outlet and a connection port; an engaging portion that engages with a predetermined portion of the second cover part; and a pair of raised portions raised from the mount surface toward the side on which the first cover part is combined with the second cover part, the pair of raised portions being provided at positions which sandwich a cable extending out from the main body of the cable connector mounted on the mount surface and which are at or near the cable outlet.

Abstract: A semiconductor device is disclosed. A gate electrode is provided above a semiconductor substrate. A sidewall insulation film is provided to the gate electrode. Source and drain regions are provided in the substrate and contain first conductive impurities. A first semiconductor region is provided in the substrate, is on a source region side, and has a concentration of the first conductive impurities lower than the source region. A second semiconductor region is provided in the substrate, is on a drain region side, and has a concentration of the first conductive impurities lower than the drain and first semiconductor regions. A channel region is provided between the first and second semiconductor regions. A third semiconductor region is provided under the channel region, and includes second conductive impurities higher in concentration than the channel region. Information is stored by accumulating charges in the sidewall insulation film.

Abstract: The present invention provides a sintered metal friction material that has excellent wear resistance, heat resistance even at high load and has a higher friction coefficient while maintaining a friction coefficient and wear resistance that are hard to decrease, and has a reduced content of copper of less than 5 mass %. There is provided a sintered metal friction material characterized in that the sintered metal friction material comprises a sintered material of a friction material composition, the friction material composition comprises matrix metals and a friction modifier, the matrix metals comprise following 20 to 40 mass % of iron powder, 20 to 40 mass % of nickel powder, 0.5 to 10 mass % of zinc powder, 0.5 to 5 mass, of tin powder, 0.5 to 4 mass % of copper powder and 0.5 to 5 mass % of sintering assist powder.

Abstract: An image forming apparatus includes an image forming device to form a correction image, an image density detector to detect image densities of a plurality of areas in the correction image, and circuitry to correct an image formation condition of the image forming device based on detected image densities of the plurality of areas. The circuitry replaces a detected image density of an area of interest selected from the plurality of areas with an average value of detected image densities of two or more areas including adjacent areas adjacent to the area of interest and corrects the image formation condition of the image forming device based on the detected image densities of the plurality of areas after replacement when a difference between the detected image density of the area of interest and at least one of the detected image densities of the adjacent areas exceeds a predetermined threshold.

Abstract: A cover member includes a first cover part and a second cover part. The first cover part includes: a mount surface on which a main body of a cable connector is mounted; a periphery wall which is provided to lie substantially along an outer edge of the main body of the cable connector mounted on the mount surface and which is raised from the mount surface toward a side on which the first cover part is combined with the second cover part; a cable outlet and a connection port; an engaging portion that engages with a predetermined portion of the second cover part; and a pair of raised portions raised from the mount surface toward the side on which the first cover part is combined with the second cover part, the pair of raised portions being provided at positions which sandwich a cable extending out from the main body of the cable connector mounted on the mount surface and which are at or near the cable outlet.

Abstract: A control circuit controls a column decoder and a row decoder to perform reprogramming where, before the count of reprogramming operations involving erasures, each targeting one of a plurality of memory cells included in a memory cell array, reaches a predetermined number, a first extent (e.g. a sub-block) including the targeted memory cell and being smaller than the entire extent of the memory cell array is used as the unit of reprogramming, and when the count of reprogramming operations reaches the predetermined number, a second extent (e.g. the memory cell array corresponding to one sector) including the targeted memory cell and being larger than the first extent is used as the unit of reprogramming, and resets the count of reprogramming operations each time it reaches the predetermined number.

Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.

Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.