Abstract: An image forming apparatus includes an image forming device to form a correction image, an image density detector to detect image densities of a plurality of areas in the correction image, and circuitry to correct an image formation condition of the image forming device based on detected image densities of the plurality of areas. The circuitry replaces a detected image density of an area of interest selected from the plurality of areas with an average value of detected image densities of two or more areas including adjacent areas adjacent to the area of interest and corrects the image formation condition of the image forming device based on the detected image densities of the plurality of areas after replacement when a difference between the detected image density of the area of interest and at least one of the detected image densities of the adjacent areas exceeds a predetermined threshold.

Abstract: A semiconductor device includes a gate insulator layer above a semiconductor substrate, a gate electrode above the gate insulating layer, a sidewall insulator layer on sidewalls of the gate electrode and above the substrate, source and drain regions within the substrate on both sides of the gate electrode, a first region within the substrate below a part of the sidewall insulator layer closer to the source region and having an impurity concentration lower than the source region, a second region provided within the substrate below a part of the sidewall insulator layer closer to the drain region and having an impurity concentration lower than the drain region, a channel region provided within the substrate between the first and second regions, and a third region within the substrate below the channel region and including impurities of a different type and having an impurity concentration higher than the channel region.

Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.

Abstract: An image forming apparatus includes an image forming device to form a correction image, an image density detector to detect image densities of a plurality of areas in the correction image, and circuitry to correct an image formation condition of the image forming device based on detected image densities of the plurality of areas. The circuitry replaces a detected image density of an area of interest selected from the plurality of areas with an average value of detected image densities of two or more areas including adjacent areas adjacent to the area of interest and corrects the image formation condition of the image forming device based on the detected image densities of the plurality of areas after replacement when a difference between the detected image density of the area of interest and at least one of the detected image densities of the adjacent areas exceeds a predetermined threshold.

Abstract: An image forming apparatus includes an image forming device to form a correction image, an image density detector to detect image densities of a plurality of areas in the correction image, and circuitry to correct an image formation condition of the image forming device based on detected image densities of the plurality of areas. The circuitry replaces a detected image density of an area of interest selected from the plurality of areas with an average value of detected image densities of two or more areas including adjacent areas adjacent to the area of interest and corrects the image formation condition of the image forming device based on the detected image densities of the plurality of areas after replacement when a difference between the detected image density of the area of interest and at least one of the detected image densities of the adjacent areas exceeds a predetermined threshold.

Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.

Abstract: A control circuit controls a column decoder and a row decoder to perform reprogramming where, before the count of reprogramming operations involving erasures, each targeting one of a plurality of memory cells included in a memory cell array, reaches a predetermined number, a first extent (e.g. a sub-block) including the targeted memory cell and being smaller than the entire extent of the memory cell array is used as the unit of reprogramming, and when the count of reprogramming operations reaches the predetermined number, a second extent (e.g. the memory cell array corresponding to one sector) including the targeted memory cell and being larger than the first extent is used as the unit of reprogramming, and resets the count of reprogramming operations each time it reaches the predetermined number.

Abstract: A semiconductor device includes a gate insulator layer above a semiconductor substrate, a gate electrode above the gate insulating layer, a sidewall insulator layer on sidewalls of the gate electrode and above the substrate, source and drain regions within the substrate on both sides of the gate electrode, a first region within the substrate below a part of the sidewall insulator layer closer to the source region and having an impurity concentration lower than the source region, a second region provided within the substrate below a part of the sidewall insulator layer closer to the drain region and having an impurity concentration lower than the drain region, a channel region provided within the substrate between the first and second regions, and a third region within the substrate below the channel region and including impurities of a different type and having an impurity concentration higher than the channel region.

Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.

Abstract: A semiconductor device includes first and second transistors connected to the same power supply. Each of the first and second transistors includes, under a channel region of a low concentration provided between a source region and a drain region of a first conductivity type, an impurity region of a second conductivity type having a higher concentration. The thickness of the gate insulating film in one of the first and second transistors is made larger than the thickness of the gate insulating film in the other one.

Abstract: A semiconductor device is disclosed. A gate electrode is provided above a semiconductor substrate. A sidewall insulation film is provided to the gate electrode. Source and drain regions are provided in the substrate and contain first conductive impurities. A first semiconductor region is provided in the substrate, is on a source region side, and has a concentration of the first conductive impurities lower than the source region. A second semiconductor region is provided in the substrate, is on a drain region side, and has a concentration of the first conductive impurities lower than the drain and first semiconductor regions. A channel region is provided between the first and second semiconductor regions. A third semiconductor region is provided under the channel region, and includes second conductive impurities higher in concentration than the channel region. Information is stored by accumulating charges in the sidewall insulation film.

Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.

Abstract: A plurality of management cards including an active card and a standby card are provided. The active card determines open or block of a ring port in accordance with an event based on a ring protocol, issues an open instruction or a block instruction to a line card, and notifies a block factor in addition to the block instruction when issuing the block instruction. The line card controls open or block of the ring port in accordance with the open instruction or the block instruction and retains open/block information of the ring port and a block factor of the block state in a port management table. When the standby card is changed to the active card in accordance with a predetermined change instruction, it acquires the information retained in the port management table from the line card.

Abstract: A semiconductor device manufacturing method includes forming a silicon layer by epitaxial growth over a semiconductor substrate having a first area and a second area; forming a first gate oxide film by oxidizing the silicon layer; removing the first gate oxide film from the second area, while maintaining the first gate oxide film in the first area; thereafter, increasing a thickness of the first gate oxide film in the first area and simultaneously forming a second gate oxide film by oxidizing the silicon layer in the second area; and forming a first gate electrode and a second gate electrode over the first gate oxide film and the second gate oxide film, respectively, wherein after the formation of the first and second gate electrodes, the silicon layer in the first area is thicker than the silicon layer in the second area.

Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.

Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.

Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.

Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.

Abstract: An image forming apparatus includes a toner pattern bearer to bear a first toner pattern having a first image area and a second toner pattern having a second image area different from the first image area. A toner adhesion amount detector detects a toner adhesion amount of toner of each of the first toner pattern and the second toner pattern. A toner degradation rate calculator calculates a first deviation in the toner adhesion amount of the first toner pattern and a second deviation in the toner adhesion amount of the second toner pattern based on the toner adhesion amount detected by the toner adhesion amount detector. The toner degradation rate calculator compares the first deviation with the second deviation and calculates a toner degradation rate based on a comparison result.