Abstract: According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.

Abstract: Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1?1/(l+m+n)?0.7; 0.3?m/(l+m+n)?0.9; and 0.0?n/(1+m+n)?0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.

Abstract: A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.

Abstract: The semiconductor structure includes an etch target layer to be pattemed, a multiple bottom anti-reflective coating (BARC) layer, and a photoresist (PR) pattern. The multiple BARC layer includes a first mask layer formed on the etch target layer and containing carbon, and a second mask layer formed on the first mask layer and containing silicon. A PR layer formed on the multiple BARC layer undergoes photolithography to form the PR pattern on the multiple BARC layer. The multiple BARC layer has a reflectance of 2% or less, and an interface angle between the PR pattern and the multiple BARC layer is 80° to 90°.

Abstract: Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

Abstract: Methods of forming fine patterns of a semiconductor device include forming a positive first photoresist layer on a semiconductor substrate, including initiating an exposure reaction at a first dose. The first photoresist layer is exposed and developed to form first photoresist patterns. A second photoresist layer is formed on a region of the semiconductor substrate including the first photoresist patterns, including terminating an exposure reaction at a second dose no greater than the first dose. The second photoresist layer is exposed and developed to form second photoresist patterns between the first photoresist patterns. Methods of forming fine patterns having a negative first photoresist layer are also provided.

Abstract: The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.

Abstract: A photo mask structure used during a twice-performed photo process and methods of using the same. The photo mask structure may include first mask patterns that correspond to first photoresist patterns during a first photo process performed on a first photoresist layer and second mask patterns that correspond to second photoresist patterns during a second photo process performed on a second photoresist layer. A method of using a photo mask structure may include performing a first photo process on a first photoresist layer using first mask patterns of the photo mask structure to form first photoresist patterns on a semiconductor substrate, and performing a second photo process on a second photoresist layer using second mask patterns of the photo mask structure to form second photoresist patterns on a semiconductor substrate, wherein the second photoresist patterns are interposed between the first photoresist patterns and overlap the first photoresist patterns.

Abstract: Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03?m/(m+n+q)?0.97, 0.03?n/(m+n+q)?0.97, 0?q/(m+n+q)?0.5; and wherein the solvent includes deionized water.

Abstract: In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3?-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3?-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.

Abstract: An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulating pattern formed over the silicon substrate, and a first conductive pattern formed over the first insulating pattern. An overlay key region is formed in a second portion of the silicon substrate and includes a second trench formed in the silicon substrate, a second insulating pattern formed over the silicon substrate and used as an overlay key, and a second conductive pattern formed over the second insulating pattern and formed by correcting overlay and alignment errors using the second insulating pattern.

Abstract: According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.