Abstract: A method for manufacturing a semiconductor device comprises: forming an N region and P region on a substrate, forming wiring so as to connect one or both of these N and P regions; and performing a processing step on a semiconductor substrate on which the upper surface of said wiring is exposed using a liquid, wherein said processing step is performed in a state in which the wavelength of light radiated onto said semiconductor substrate is 500 nm to less than 1 &mgr;m, so that problems such as wiring connection defects for which there is the risk of occurring in the cleaning step are prevented by performing the cleaning step during, before or after a step that includes chemical mechanical polishing (CMP) for forming the above wiring.

Abstract: A semiconductor device and a method for manufacturing like are provided in which wiring capacitance between adjacent wirings can be effectively reduced in a wiring structure having a dummy wiring required for planarization of an interlayer dielectric. In the semiconductor device of the present invention, a distance being approximately twice s large as a width of the wiring constituting a first wiring and a second wiring is kept between one side edge of the dummy wiring and a side edge of the first wiring as well as between another side edge of the dummy wiring and a side edge of the second wiring.

Abstract: In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate.The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.