Patents by Inventor Manabu Sato
Manabu Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240123654Abstract: Provided is a separation and recovery apparatus for continuously separating and recovering, from a resin mixture containing a resin containing a hydrolyzable polymer and a resin containing a nonhydrolyzable polymer, a hydrolytic component a of the hydrolyzable polymer A and the nonhydrolyzable polymer B, the apparatus including: a crushing unit that crushes the resin mixture a melting/discharging unit that melts a crushed product obtained by the crushing unit to form a fluid and discharges the fluid at a high pressure; and a hydrothermal reaction treatment unit that continuously subjects the fluid discharged from the melting/discharging unit to a hydrothermal reaction treatment, wherein, in the melting/discharging unit, the hydrolyzable polymer A is hydrolyzed, and the hydrolytic component a thereof is dissolved and transferred into water permeating a sintered alloy diaphragm, thereby separating the nonhydrolyzable polymer B.Type: ApplicationFiled: December 15, 2023Publication date: April 18, 2024Applicant: TOPPAN INC.Inventors: Masaru WATANABE, Aritomo YAMAGUCHI, Osamu SATO, Yuuma IRISA, Akira TAKAMA, Kousuke NISHIMURA, Hiroki KUJIRAOKA, Hideki MIYAZAKI, Keita AKIMOTO, Takuya TAKAHATA, Daisuke KUGIMOTO, Shingo KOUDA, Satoshi HAMURA, Takahiro IMAI, Yumiko OMORI, Manabu KAWA
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Publication number: 20240082965Abstract: A piston ring installation jig is to be used when installing a piston ring having a ring gap in a ring groove formed in an outer peripheral surface of a piston. The piston ring installation jig includes a main body including a groove. The main body has in a semi-cylindrical shape surrounding the outer peripheral surface of the piston. The groove has a substantially semicircular arc shape, and is formed in an inner peripheral surface of the main body in a region corresponding to the ring groove of the piston. A portion of the piston ring in a circumferential direction is inserted into the groove. The groove has a shape of an arc of a circle which has a circle center biased more to an outer peripheral side of the main body than a circle center of an inner peripheral surface of the main body.Type: ApplicationFiled: August 23, 2023Publication date: March 14, 2024Applicant: SUBARU CORPORATIONInventors: Atsushi TANAKA, Manabu SATO, Toshihiko FURUKAWA, Nanaka HOSODA, Ryuta SHINOHARA, Tomoki KAJIKAWA
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Patent number: 11841595Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: December 21, 2022Date of Patent: December 12, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20230354643Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.Type: ApplicationFiled: April 25, 2023Publication date: November 2, 2023Inventors: Manabu SATO, Hironori MATSUMOTO, Masataka NAKADA
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Publication number: 20230129465Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: December 21, 2022Publication date: April 27, 2023Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Publication number: 20230125324Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal.Type: ApplicationFiled: November 20, 2020Publication date: April 27, 2023Inventors: Manabu SATO, Susumu KAWASHIMA, Koji KUSUNOKI, Hidenori MORI, Hironori MATSUMOTO, Daisuke KUROSAKI, Masami JINTYOU, Masataka NAKADA
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Publication number: 20230092551Abstract: A semiconductor storage device of an embodiment includes: a plurality of memory strings each including a plurality of memory cell transistors, the plurality of memory strings being connected in parallel to one another; and a control circuit configured to control a write operation on at least part of the plurality of memory cell transistors. The write operation is executed in response to reception of the write command and the address. The control circuit determines, based on the address, whether to perform a first voltage application operation before the write operation ends. The first voltage application operation applies a predetermined voltage to the plurality of word lines.Type: ApplicationFiled: June 13, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Manabu SATO, Yoshikazu HARADA, Naoya SHIMMYO
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Patent number: 11543718Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: January 21, 2022Date of Patent: January 3, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20220406818Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes first to third transistors and a capacitor. In the first transistor, one of a source and a drain is supplied with a first signal, the other of the source and the drain is connected to a gate of the second transistor and one electrode of the capacitor, and a gate is supplied with a second pulse signal. In the second transistor, one of a source and a drain is supplied with a first pulse signal, and the other of the source and the drain is connected to the other electrode of the capacitor and one of a source and a drain of the third transistor. In the third transistor, the other of the source and the drain is supplied with the first potential, and a gate is supplied with a second signal that is an inverted signal of the first signal. The first pulse signal is a clock signal, and the second pulse signal has a duty ratio of 55% or lower.Type: ApplicationFiled: December 2, 2020Publication date: December 22, 2022Inventors: Susumu KAWASHIMA, Manabu SATO, Koji KUSUNOKI, Hidenori MORI, Hironori MATSUMOTO
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Publication number: 20220262601Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.Type: ApplicationFiled: February 15, 2022Publication date: August 18, 2022Applicant: TOKYO ELECTRON LIMITEDInventors: Seiichi WATANABE, Manabu SATO, Masayuki SAWATAISHI, Hiroki YAMADA, Shinji ORIMO
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Patent number: 11384855Abstract: A fluid pressure valve according to an embodiment of the present invention is applicable to a fluid pressure servo mechanism. The fluid pressure valve includes a housing having a housing member, the housing member being formed integrally so as to have a first port, a second port, and a flow path connecting between the first port and the second port.Type: GrantFiled: May 20, 2019Date of Patent: July 12, 2022Assignee: NABTESCO CORPORATIONInventors: Yuichi Katoh, Manabu Sato
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Patent number: 11327376Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: July 2, 2021Date of Patent: May 10, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20220137469Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: January 21, 2022Publication date: May 5, 2022Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Publication number: 20210333668Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: July 2, 2021Publication date: October 28, 2021Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 11137651Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: October 28, 2020Date of Patent: October 5, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Patent number: 11121000Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.Type: GrantFiled: August 3, 2020Date of Patent: September 14, 2021Assignee: Tokyo Electron LimitedInventors: Seiichi Watanabe, Hiroki Yamada, Manabu Sato
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Publication number: 20210082669Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.Type: ApplicationFiled: November 25, 2020Publication date: March 18, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Akira KOSHIISHI, Masaru SUGIMOTO, Kunihiko HINATA, Noriyuki KOBAYASHI, Chishio KOSHIMIZU, Ryuji OHTANI, Kazuo KIBI, Masashi SAITO, Naoki MATSUMOTO, Yoshinobu OHYA, Manabu IWATA, Daisuke YANO, Yohei YAMAZAWA, Hidetoshi HANAOKA, Toshihiro HAYAMI, Hiroki YAMAZAKI, Manabu SATO
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Publication number: 20210072605Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: October 28, 2020Publication date: March 11, 2021Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Publication number: 20210043461Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.Type: ApplicationFiled: August 3, 2020Publication date: February 11, 2021Inventors: Seiichi WATANABE, Hiroki YAMADA, Manabu SATO
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Patent number: 10877338Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: May 4, 2020Date of Patent: December 29, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki