Abstract: A semiconductor storage device of an embodiment includes: a plurality of memory strings each including a plurality of memory cell transistors, the plurality of memory strings being connected in parallel to one another; and a control circuit configured to control a write operation on at least part of the plurality of memory cell transistors. The write operation is executed in response to reception of the write command and the address. The control circuit determines, based on the address, whether to perform a first voltage application operation before the write operation ends. The first voltage application operation applies a predetermined voltage to the plurality of word lines.

Abstract: A piston ring installation jig is to be used when installing a piston ring having a ring gap in a ring groove formed in an outer peripheral surface of a piston. The piston ring installation jig includes a main body including a groove. The main body has in a semi-cylindrical shape surrounding the outer peripheral surface of the piston. The groove has a substantially semicircular arc shape, and is formed in an inner peripheral surface of the main body in a region corresponding to the ring groove of the piston. A portion of the piston ring in a circumferential direction is inserted into the groove. The groove has a shape of an arc of a circle which has a circle center biased more to an outer peripheral side of the main body than a circle center of an inner peripheral surface of the main body.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.

Abstract: A semiconductor storage device of an embodiment includes: a plurality of memory strings each including a plurality of memory cell transistors, the plurality of memory strings being connected in parallel to one another; and a control circuit configured to control a write operation on at least part of the plurality of memory cell transistors. The write operation is executed in response to reception of the write command and the address. The control circuit determines, based on the address, whether to perform a first voltage application operation before the write operation ends. The first voltage application operation applies a predetermined voltage to the plurality of word lines.

Abstract: A highly reliable semiconductor device or display device is provided. The semiconductor device has a function of inhibiting hot-carrier degradation of a transistor and includes a switch which includes a plurality of transistors connected in series and a diode connected to a node between the transistors. An appropriate potential supplied from the diode to the node can lower a source-drain voltage before the transistor is turned on, so that hot-carrier degradation can be inhibited.

Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.

Abstract: There is provided a metal-bonded grinding stone including an abrasive grain layer in which a plurality of abrasive grains and a plurality of pores are dispersed in a metal bonding material, in which a porosity of the plurality of pores in the abrasive grain layer is 40% or more and 99% or less.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A memory device includes a memory cell array including a block including a first transistor connected to a first select gate line, a second transistor connected to a second select gate line, and a plurality of memory cells connected in series between the first and second transistors and each connected to one corresponding word line of a plurality of word lines, and a row control circuit that outputs a control signal for setting the block to be in a selected state or an unselected state based on a result of decoding an address, stores information indicating whether the block is a non-defective block, and controls an electrical state of the second select gate line independently of the first select gate line based on the control signal and the information.

Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A piston ring installation jig is to be used when installing a piston ring having a ring gap in a ring groove formed in an outer peripheral surface of a piston. The piston ring installation jig includes a main body including a groove. The main body has in a semi-cylindrical shape surrounding the outer peripheral surface of the piston. The groove has a substantially semicircular arc shape, and is formed in an inner peripheral surface of the main body in a region corresponding to the ring groove of the piston. A portion of the piston ring in a circumferential direction is inserted into the groove. The groove has a shape of an arc of a circle which has a circle center biased more to an outer peripheral side of the main body than a circle center of an inner peripheral surface of the main body.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A semiconductor storage device of an embodiment includes: a plurality of memory strings each including a plurality of memory cell transistors, the plurality of memory strings being connected in parallel to one another; and a control circuit configured to control a write operation on at least part of the plurality of memory cell transistors. The write operation is executed in response to reception of the write command and the address. The control circuit determines, based on the address, whether to perform a first voltage application operation before the write operation ends. The first voltage application operation applies a predetermined voltage to the plurality of word lines.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes first to third transistors and a capacitor. In the first transistor, one of a source and a drain is supplied with a first signal, the other of the source and the drain is connected to a gate of the second transistor and one electrode of the capacitor, and a gate is supplied with a second pulse signal. In the second transistor, one of a source and a drain is supplied with a first pulse signal, and the other of the source and the drain is connected to the other electrode of the capacitor and one of a source and a drain of the third transistor. In the third transistor, the other of the source and the drain is supplied with the first potential, and a gate is supplied with a second signal that is an inverted signal of the first signal. The first pulse signal is a clock signal, and the second pulse signal has a duty ratio of 55% or lower.