Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor.

Abstract: A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.

Abstract: A capacitor comprising: a capacitor body including a plurality of laminated dielectric layers, a plurality of inner electrode layers which are respectively disposed between mutually adjacent ones of the dielectric layers, a first main surface located in a laminated direction of the dielectric layers, and a second main surface opposite to the first main surface; a first outer electrode formed on the first main surface of the capacitor body and electrically connected to the inner electrode layers; a second outer electrode formed on the second main surface of the capacitor body and electrically connected to the inner electrode layers; a first dummy electrode formed on the first main surface of the capacitor body; and a second dummy electrode formed on the second main surface of the capacitor body.

Abstract: Provided is an oil or fat composition of high diacylglycerol content. Even when used in cooking, the cooked food has a good external appearance without darkening, and retains its inherent flavor. Even when used in cooking after storage under light-exposed conditions, the cooked food is provided with a good external appearance and flavor. The oil or fat composition is obtained by combining, at specific contents, (A) an oil or fat of high diacylglycerol content, said oil or fat having a particular composition, (B) a plant sterol and (C) a plant sterol fatty acid ester.

Abstract: A method of emanating a sound from a vehicle includes detecting a transmission state and a brake state of the vehicle and determining whether a vehicle movement state indicates intent to move the vehicle from a stationary state based on the transmission state and the brake state. The method further includes emanating the sound when the vehicle movement state indicates intent to move the vehicle, and refraining from emanating the sound when the vehicle is in the stationary state and the vehicle movement state fails to indicate intent to move the vehicle.

Abstract: A method for producing an immobilized enzyme which includes the steps of immobilizing an enzyme used for hydrolyzing fats and oils on a immobilization carrier by adsorption, bringing the immobilized enzyme into contact with an organic solvent in which fat-soluble fatty acids or the derivatives thereof have been dissolved, and adjusting the moisture content of the immobilized enzyme from 1 to 20% by weight based on the weight of the carrier.

Abstract: A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

Abstract: A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.

Abstract: A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.

Abstract: A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.

Abstract: A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

Abstract: A method for controlling a vehicle to emanate an audible alert including determining when the vehicle is operating, and controlling a speaker system in the vehicle to emanate the audible alert outside of the vehicle when the vehicle is operating based on stored information representative of an internal combustion engine (ICE) noise profile. The audible alert has a sound profile including a simultaneous emanation of first, second and third audible frequency components having first, second and third frequencies, respectively, with the first and second frequencies emanating at first and second sound pressure levels greater than first and second representative sound pressure levels of the ICE noise profile at the first and second frequencies, respectively, and the third frequency emanating at a third sound pressure level less than a third representative sound pressure level of the ICE noise profile at the third frequency.

Abstract: There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.

Abstract: To provide a method for purifying tetrafluoroethylene by removing, from tetrafluoroethylene containing a polymerization inhibitor, the polymerization inhibitor by adsorption. A method of bringing tetrafluoroethylene containing a polymerization inhibitor into contact with a silica gel containing a metal salt in an amount of from 250 to 100,000 mass ppm as calculated as metal atoms to remove the polymerization inhibitor by adsorption, and the metal salt is preferably a salt of a metal of Group 3 to 13 of the Periodic Table, more preferably a salt of a metal of Group 8 to 10 of the Periodic Table. For example, as the metal salt, a salt of at least one metal selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum may be used.

Abstract: A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.

Abstract: A nonvolatile memory element which is provided with a floating gate electrode and a high withstand voltage transistor which is provided with a thick gate insulating film are formed over one substrate without increase in a driving voltage of the nonvolatile memory element. A stacked film of a first insulating film and a second insulating film is formed between an island-like semiconductor region and a floating gate electrode of the nonvolatile memory element and between an island-like semiconductor region and a gate electrode of the transistor. The first insulating film overlapping with the floating gate electrode is removed, and the insulating film between the island-like semiconductor region and the floating gate electrode is formed thinner than the gate insulating film of the transistor.

Abstract: An oven observing equipment capable of observing the inside of an oven turned to a high temperature precisely includes: a housing 13 having an intake part for cooling air, and a discharging part for discharging the cooling air after being used for cooling; and an imaging device 20 contained in this housing 13 near the discharge part. This imaging device 20 is composed of integrated combination of an image sensor 16; plate-like thermoelectric cooling elements 18a to 18d arranged in a state that their heat-absorbing faces surround the periphery of a body of the image sensor; thermoconductive blocks 17a to 17d embedded in the gaps between the image sensor body and the thermoelectric cooling elements 18a to 18d; and cooling fins 19a to 19d formed on the heat-radiating faces of the thermoelectric cooling elements 18a to 18d are integrated with each other.

Abstract: A method for controlling a vehicle to emanate an audible alert. The method includes determining when the vehicle is operating, and controlling a speaker system in the vehicle to emanate the audible alert outside of the vehicle for a period of time when the vehicle is operating. The audible alert has a sound profile that includes a simultaneous emanation of a first audible frequency component at a first sound pressure level and a second audible frequency component at a second sound pressure level, with the first and second sound pressure levels being greater than a sound pressure level of the sound profile at all other frequencies. The method further includes modulating the first sound pressure level of the first audible frequency component.

Abstract: A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.