Abstract: A memory system includes a memory device, and a controller which controls the memory device. The memory device includes a plurality of memory cells capable of rewriting data, a plurality of word lines connected to the plurality of memory cells, a page including the plurality of memory cells connected to the same word line, a plane including a plurality of pages, a memory cell array including a plurality of planes, and a plurality of word line drivers which apply voltages to the plurality of word lines, and a plurality of switches provided for each plane and which assigns the word line drivers to the word lines.

Abstract: A rotary dresser includes a cored bar, an electroformed layer, and superabrasive grains fixed to an outer circumferential surface of the electroformed layer, and a plurality of island regions in which a plurality of superabrasive grains is gathered is provided at certain intervals. Since a plurality of the island regions in which a plurality of the superabrasive grains is gathered is provided at certain intervals, the same degree of dressing accuracy can be obtained as in a case in which expensive large superabrasive grains are fixed at a low density using cheap and small superabrasive grains, it is possible to decrease the contact area of a single superabrasive grain, and favorable cutting quality can be obtained.

Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor.

Abstract: A method of emanating a sound from a vehicle comprising detecting a speed of the vehicle, and emanating a speed sound, including emanating a sound profile and changing at least one of a sound pressure level and a pitch of the sound profile in relation to the speed of the vehicle changing. The method further comprises ceasing emanation of the speed sound upon the speed of the vehicle increasing from below a first threshold to above the first threshold, and resuming emanation of the speed sound upon the speed of the vehicle decreasing from above a second threshold to below the second threshold, the second threshold being less than the first threshold.

Abstract: A method of emanating a sound from a vehicle comprising detecting an accelerator state, a brake state, and a transmission state of the vehicle, and emanating a take-off sound. The take-off sound includes changing emanation of a sound profile from a first sound pressure level to a second sound pressure level that is greater than the first sound pressure level, upon first detecting the accelerator state transitioned from an accelerator released state to an accelerator depressed state while the brake state indicates the brake released state and the transmission state indicates a motive state.

Abstract: A motion guide device includes a plurality of rolling element guide members provided along the entire length of a rolling element rolling surface so as to guide the unloaded side of a plurality of rolling elements that perform a rolling movement under load between the rolling element rolling surface and a loaded rolling element rolling surface. The rolling element guide member includes a beam member an outer member including a rolling element guide surface for guiding the unloaded side of the rolling elements, and the beam member and the outer member are insert-molded. Such a structure provides the motion guide device including the rolling element guide member that enables low cost manufacturing of a complex shape and capability of secure installation and guidance of the rolling elements with no deflection and can be adapted for use in various types by optionally selecting a connecting means.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing HBr gas and C4F8 gas, and the etching gradually forms recesses from a SiN layer through a laminated film. By adding a gas containing boron to the processing gas during the etching at a predetermined timing and at a predetermined flow ratio while etching the laminated film, a protective film is formed on side walls of the SiN layer that are exposed to the recess.

Abstract: A motion device (1) includes a track rail (10), a moving body (21), a plurality of rolling elements (70) rolling in an endless circulation passage formed at the track rail (10) and the moving body (21), a pair of lid bodies (50) attached to end surfaces of the moving body (21) in a movement direction thereof, and a connector cover body (80) disposed along a rolling element rolling surface (28) formed at the moving body (21) to cover a rolling element connector (72) connecting and holding the rolling elements (70). The connector cover body (80) has a frame-shaped cover member (86) which is fixed to the pair of the lid bodies (50) to be integrally disposed at both ends of the rolling element rolling surface (28) in a width direction thereof.

Abstract: A plasma processing method is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The plasma processing method includes a first step of etching the multilayer film to a first depth using a gas mixture containing a CF based gas at a first flow rate and a bromine-containing gas, a chloride-containing gas, and/or an iodine-containing gas; a second step of etching the multilayer film to a second depth after the first step using a gas mixture containing the CF based gas at a second flow rate and the bromine-containing gas, the chloride-containing gas, and/or the iodine-containing gas; and a third step for over etching the multilayer film after the second step until the hole reaches a base layer.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract: A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative DC voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film.

Abstract: A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Abstract: One object is to shorten the time required for a terminal to display a screen including images. A server according to an embodiment includes: a storage unit for storing information; and a display control unit for causing, in response to a display request for displaying the screen from the terminal, the terminal to display the screen including the images corresponding to the image files by using the image files stored on the storage of the terminal or the image files stored on the storage of the server selected in accordance with a predetermined selection condition based at least on the throughput of the terminal and the communication capacity between the server and the terminal.

Abstract: A method of emanating a sound from a vehicle comprising detecting an accelerator state, a brake state, and a transmission state of the vehicle, and emanating a take-off sound. The take-off sound includes changing emanation of a sound profile from a first sound pressure level to a second sound pressure level that is greater than the first sound pressure level, upon first detecting the accelerator state transitioned from an accelerator released state to an accelerator depressed state while the brake state indicates the brake released state and the transmission state indicates a motive state.

Abstract: A method of emanating a sound from a vehicle comprising detecting a speed of the vehicle, and emanating a speed sound, including emanating a sound profile and changing at least one of a sound pressure level and a pitch of the sound profile in relation to the speed of the vehicle changing. The method further comprises ceasing emanation of the speed sound upon the speed of the vehicle increasing from below a first threshold to above the first threshold, and resuming emanation of the speed sound upon the speed of the vehicle decreasing from above a second threshold to below the second threshold, the second threshold being less than the first threshold.