Abstract: A non-contact cooling assembly for cooling substrates in equipment front end module in batch is presented. The cooling assembly may comprise a support beam and a plurality of cooling plates, wherein the cooling plates are arranged horizontally stacked and attached to the support beam, and wherein the support beam is configured to move horizontally for cooling substrates. Each of the cooling plates may utilize either thermoelectric cooling effect or cooling fluid for cooling the cooling plates and a cooling plate is placed at a first position (distal position) at first and it moves to a second position (proximal position) for more effective substrate cooling.

Abstract: Substrate processing systems and methods include sealing a gate valve connecting a first chamber (e.g., a load-lock module) and a second chamber (e.g., an equipment front end module), wherein a first side of the first chamber connects to layer deposition equipment and a second side of the first chamber connects to the second chamber via the gate valve. The second chamber receives (i) incoming substrates to be supplied to the first chamber and (ii) outgoing substrates to be removed from the first chamber. In use, a processed substrate is moved from the layer deposition equipment into the first chamber. This processed substrate is cooled by transferring inert gas from the second chamber into the first chamber and into contact with the processed substrate, thereby transferring heat from the processed substrate to the inert gas. After passing over the processed substrate, the inert gas is exhausted from the first chamber.

Abstract: Thermal breaks and/or gaps between portions of interfacing surfaces of two chambers reduce heat transfer between the chambers. An interface surface (e.g., of a gate valve) includes (i) a base surface; (ii) a raised ring surface extending outward beyond the base surface, wherein the raised ring surface extends around a gate valve access opening; (iii) a seal support surface extending around the raised ring surface; and (iv) at least one raised boss surface extending outward beyond the base surface. The interface surface defines an outer perimeter having a total interface area. The raised ring surface and raised boss surface(s) define at least a portion of a total contacting surface area of the interface surface that is spaced outward from the base surface. The total contacting surface area of the interface surface is less than 10% of the total interface area and/or less than 10% of the base surface's surface area.

Abstract: A method of cleaning wafer carriers includes the steps of: 1) loading a wafer carrier in need of cleaning into a cleaning chamber, injecting one or more cleaning gases into the cleaning chamber; 2) activating the one or more cleaning gases at a temperature ranging from about 400° C. to about 1000° C. under a pressure ranging from about 100 Torr to about 760 Torr; 3) exposing surfaces of the wafer carrier to the activated one or more cleaning gases; and 4) inspecting the wafer carrier surfaces using one or more surface characterization tools to determine if the wafer carrier has been cleaned.

Abstract: A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.

Abstract: An equipment front-end module (EFEM) includes a with a load port seat and a transfer robot seat. A fan filter unit is supported by the frame assembly and a controls box encloses the fan filter unit and is supported by the fan filter unit. The rear panel has a tunnel seat, is fixed to the frame assembly, and is separated from the load port seat by the transfer robot seat. One of (a) a plate body with an inboard passthrough and (b) a tunnel body with an outboard passthrough fixed at the tunnel seat and coupled to the frame assembly by the rear panel to space a process chamber with a quad chamber arrangement from the frame assembly differently along a transfer extending through the tunnel seat than a process module having a single or a dual chamber arrangement using a singular EFEM arrangement. Semiconductor processing systems and methods of making semiconductor processing systems are also described.

Abstract: A load lock arrangement includes a load lock body having an upper plate member defining an upper accessory seat, an intermediate plate member spaced apart from the upper plate member and defining an intermediate accessory seat, and a lower plate member separated from the upper plate member by the intermediate plate member and defining a lower accessory seat. One of an upper heater and an upper accessory seat blanking plate is fixed to the upper accessory seat; one of an upper chill plate and an intermediate accessory seat blanking plate fixed to the intermediate accessory seat; and one of a lower chill plate, a lower heater, and a lower accessory seat blanking plate fixed to the lower accessory seat. Semiconductor processing systems, methods of making load lock arrangements, and material layer deposition methods are also described.

Abstract: A semiconductor processing system includes a front-end module connected to a load lock, a process module coupled to the front-end module by the load lock, a purge/vent fluid inlet conduit connected to the load lock, a heater element coupled to the load lock by the purge/vent fluid inlet conduit, and a controller. The controller is operably connected to the heater element and responsive to instructions recorded on a memory to transfer a substrate carrying substrate moisture from the front-end module into the load lock, heat a purge/vent fluid using the heater element, flow the heated purge/vent fluid into the load lock using the purge/vent fluid inlet conduit, remove the moisture from the load lock using the heated purge/vent fluid, and transfer the substrate from the load lock to the process module for processing using the process module. Moisture control methods and heated purge/vent fluid arrangements are also described.

Abstract: A self-centering substrate carrier system for a chemical vapor deposition reactor includes a substrate carrier chosen to at least partially support a wafer for CVD processing and that comprises a beveled surface. A rotating tube comprising a beveled surface that matches the beveled surface of the substrate carrier, where a shape and dimensions of a cross section of the substrate carrier are chosen such that a center of mass of the substrate carrier is positioned a distance that is below a plane of contact defined by where a rim of substrate carrier contacts a rim of the rotating tube.

Abstract: A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.

Abstract: An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.

Abstract: A wafer carrier as described and claimed herein includes a thermal cover and a plurality of platforms with corresponding radially inner and outer pedestals.