Abstract: A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

Abstract: A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

Abstract: Method for manufacturing an electronic semiconductor package, in which method an electronic chip (100) is coupled to a carrier, the electronic chip is at least partially encapsulated by means of an encapsulation structure having a discontinuity, and the carrier is partially encapsulated, and at least one part of the discontinuity and a volume connected thereto adjoining an exposed surface section of the carrier are covered by an electrically insulating thermal interface structure, which electrically decouples at least one part of the carrier with respect to its surroundings.

Abstract: A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

Abstract: A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

Abstract: An electronic component comprising an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating part of the carrier and the electronic chip, and an electrically insulating and thermally conductive interface structure, in particular covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant, wherein the interface structure has a compressibility in a range between 1% and 20%, in particular in a range between 5% and 15%.

Abstract: In various embodiments, a wafer box is provided. The wafer box may include a housing with a receiving space for receiving a stack comprising a plurality of wafers, each arranged above a housing base. The wafers are to be arranged with their main surfaces parallel to the housing base. The receiving space is delimited by the housing base and side walls arranged thereon. The wafer box may further include at least one base opening, arranged in the housing base, for receiving a guide structure of a wafer stacking aid. The guide structure is to be arranged in such a way that, on a side of the housing base on which the side walls are arranged, it extends out of the housing base in order to limit tilting of a wafer raised or lowered in the receiving space in a manner guided by the guide structure.

Abstract: Various embodiments provide a wafer box. The wafer box may include a housing with a receiving space for receiving at least one wafer arranged above a housing base, at least one fixing structure which is connected to the housing base and which extends from the housing base, and at least one fixing device which is fastenable to the at least one fixing structure at a variable distance from the housing base. The fixing device and the fixing structure are designed such that the at least one wafer for arrangement in the receiving space can be fixed in a position by means of the at least one fixing device fastened to the fixing structure.

Abstract: A thermoelectric device includes a plurality of first semiconductor mesa structures having a first conductivity type and a plurality of second semiconductor mesa structures having a second conductivity type. First semiconductor mesa structures of the plurality of first semiconductor mesa structures and second semiconductor mesa structures of the plurality of second semiconductor mesa structures are electrically connected in series. The thermoelectric device further includes a glass structure made of at least one of a borosilicate glass, boron-zinc-glass and a low transition temperature glass. The glass structure is arranged laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.

Abstract: Various embodiments provide a wafer box. The wafer box may include a housing with a receiving space for receiving at least one wafer arranged above a housing base, at least one fixing structure which is connected to the housing base and which extends from the housing base, and at least one fixing device which is fastenable to the at least one fixing structure at a variable distance from the housing base. The fixing device and the fixing structure are designed such that the at least one wafer for arrangement in the receiving space can be fixed in a position by means of the at least one fixing device fastened to the fixing structure.

Abstract: In various embodiments, a wafer box is provided. The wafer box may include a housing with a receiving space for receiving a stack comprising a plurality of wafers, each arranged above a housing base. The wafers are to be arranged with their main surfaces parallel to the housing base. The receiving space is delimited by the housing base and side walls arranged thereon. The wafer box may further include at least one base opening, arranged in the housing base, for receiving a guide structure of a wafer stacking aid. The guide structure is to be arranged in such a way that, on a side of the housing base on which the side walls are arranged, it extends out of the housing base in order to limit tilting of a wafer raised or lowered in the receiving space in a manner guided by the guide structure.

Abstract: A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

Abstract: A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract: A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.

Abstract: An electronic component comprising an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating part of the carrier and the electronic chip, and an electrically insulating and thermally conductive interface structure, in particular covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant, wherein the interface structure has a compressibility in a range between 1% and 20%, in particular in a range between 5% and 15%.

Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract: An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.

Abstract: A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.