Abstract: A method for producing semiconductor chips has the following steps for this purpose: firstly, a semiconductor wafer having a multiplicity of semiconductor chip positions arranged in rows and columns is provided, wherein the semiconductor wafer has on its front side front sides of semiconductor chips with integrated circuits. The rear side of the semiconductor wafer is provided with a coating having Parylene. The semiconductor wafer is subsequently singulated into semiconductor chips having rear sides on which the coating having Parylene is arranged.

Abstract: A method of fabricating a semiconductor device includes depositing a mask of low melting point material on a surface of the semiconductor device; depositing a layer to be structured relative to the mask; and removing the mask of low melting point material.

Abstract: The method comprises providing multiple chips attached to a first carrier, stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased, and applying a laminate to the multiple chips and the stretched first carrier to form a first workpiece embedding the multiple chips, the first workpiece having a first main face facing the first carrier and a second main face opposite to the first main face.

Abstract: A method of manufacturing a semiconductor device or a substrate is described. The method includes providing a chip attached to a carrier or providing a substrate. A foil is held over the chip and the carrier or the substrate. A laser beam is directed onto the foil, and substance at the foil is ablated and deposited on the chip and the carrier or on the substrate.

Abstract: A semiconductor device and method is disclosed. One embodiment provides a substrate and a first semiconductor chip applied over the substrate. A first electrically conductive layer is applied over the substrate and the first semiconductor chip. A first electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the first electrically insulating layer.

Abstract: A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.

Abstract: A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.

Abstract: This application relates to a method of manufacturing an electronic device comprising placing a first chip on a carrier; applying an insulating layer over the first chip and the carrier; applying a metal ions containing solution to the insulating layer for producing a first metal layer of a first thickness; and producing a second metal layer of a second thickness on the insulating layer wherein at least one of the first metal layer and the second metal layer comprises at least a portion that is laterally spaced apart from the respective other metal layer.

Abstract: A semiconductor product including a substrate, a semiconductor chip fitted to the substrate, and a layer, which contains coated particles, located adjacent to the semiconductor chip, wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.

Abstract: A method of manufacturing a semiconductor device. The method includes providing a metal carrier, attaching chips to the carrier, and applying a metal layer over the chips and the metal carrier to electrically couple the chips to the metal carrier. The metal carrier is segmented, after applying the metal layer, to obtain metal contact elements.

Abstract: A method of manufacturing a semiconductor device includes placing a chip on a carrier, and applying an electrically conducting layer to the chip and the carrier. The method additionally includes converting the electrically conducting layer into an electrically insulating layer.

Abstract: A semiconductor device is disclosed. One aspect provides a semiconductor device that includes a semiconductor chip including a first face and a second face opposite the first face, an encapsulant including inorganic particles encapsulating the semiconductor chip, a first metal layer attached to the first face of the semiconductor chip, a second metal layer attached the second face of the semiconductor chip, and electrically conducting material configured to connect the first metal layer with the second metal layer.

Abstract: An electrical component that includes a substrate and a polymeric layer oriented in working relation with the substrate, the polymeric layer including a low molecular mass polyimide.

Abstract: A method of fabricating a semiconductor device includes depositing a mask of low melting point material on a surface of the semiconductor device; depositing a layer to be structured relative to the mask; and removing the mask of low melting point material.

Abstract: A coating composition including a compound having a first molecular group or a first combination of atoms, the first molecular group or the first combination of atoms capable of bonding to an oxidizable metal or a metal oxide, and a second molecular group or a second combination of atoms, the second molecular group or the second combination of atoms capable of interacting with a precursor of a polymer so the compound and the polymer are bound together.

Abstract: A semiconductor device includes a carrier, a chip coupled to the carrier, a dielectric layer coupled to the carrier and the chip, and conducting elements connected to both the carrier and contacts of the chip. The chip includes a first face with a first contact spaced apart from a second contact. The dielectric layer includes a photoinitiator that configures the dielectric layer to be selectively opened to expose the first and second contacts and the carrier. A first conducting element is connected to the first contact, a second conducting element is connected to the second contact, and a third conducting element is connected to the carrier.

Abstract: An integrated circuit device includes a semiconductor device having an integrated circuit. A gas-phase deposited insulation layer is disposed on the semiconductor device, and a conducting line is disposed over the gas-phase deposited insulation layer.

Abstract: A method of manufacturing a semiconductor device includes providing a foil formed of an insulating material, where the foil includes at least one electrically conducting element, providing a chip having contact elements on a first face of the chip, and applying the foil over the contact elements of the chip.

Abstract: An integrated circuit arrangement including a nonplanar substrate on which an integrated circuit is formed on at least one side, wherein the side of the substrate which has the integrated circuit is arranged on a carrier and the carrier is produced from a chemically resistant material.

Abstract: A chip module with a substrate having a top side, a chip mounted on the top side of the substrate, and an encapsulation includes an encapsulation material. The encapsulation is applied on the chip and the top side of the substrate in such a way that the chip and the top side of the substrate are at least partly covered. The encapsulation material includes a polymer composition having at least a first polymer component and a second polymer component which are chemically covalently bonded by means of a crosslinker, the first polymer component imparting resistance toward a first class of chemically reactive compounds and the second polymer component imparting resistance toward a second class of chemically reactive compounds, the reactivities differing between the first and second classes of chemically reactive compounds.