Abstract: One aspect is a method including providing a carrier having a first conducting layer, a first insulating layer over the first conducting layer, and at least one through-connection from a first face of the first insulating layer to a second face of the first insulating layer; attaching at least two semiconductor chips to the carrier; applying a second insulating layer over the carrier; opening the second insulating layer until the carrier is exposed; depositing a metal layer over the opened second insulating layer; and separating the at least two semiconductor chips after depositing the metal layer.

Abstract: A semiconductor device and method for manufacturing. One embodiment includes a carrier, a structured layer arranged over the carrier and a semiconductor chip applied to the structured layer. The structured layer includes a first structure made of an elastic material and a second structure made of an adhesive material.

Abstract: This application relates to a method of manufacturing an electronic device comprising placing a first chip on a carrier; applying an insulating layer over the first chip and the carrier; applying a metal ions containing solution to the insulating layer for producing a first metal layer of a first thickness; and producing a second metal layer of a second thickness on the insulating layer wherein at least one of the first metal layer and the second metal layer comprises at least a portion that is laterally spaced apart from the respective other metal layer.

Abstract: An integrated circuit device includes a carrier defining a surface with a semiconductor chip including an integrated circuit attached to the carrier. An insulation layer is disposed over the carrier, extending above the surface of the carrier a first distance at a first location and a second distance at a second location. A transition area is defined between the first and second locations, wherein the transition area defines a non-right angle relative to the surface.

Abstract: An integrated circuit device includes a semiconductor device having an integrated circuit. A gas-phase deposited insulation layer is disposed on the semiconductor device, and a conducting line is disposed over the gas-phase deposited insulation layer.

Abstract: A semiconductor device and method is disclosed. One embodiment provides a substrate and a first semiconductor chip applied over the substrate. A first electrically conductive layer is applied over the substrate and the first semiconductor chip. A first electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the first electrically insulating layer.

Abstract: A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness.

Abstract: A substrate including strip conductors with a wiring pattern that connects contact areas to one another. The strip conductors have a small strip conductor width. The contact areas and/or the strip conductors form a narrow connection pitch and include electrically conductive carbon nanotubes.

Abstract: A system comprising a circuit board and an integrated circuit device mounted on the circuit board by means of an external contact, and comprising an anti-tamper device being connectable to the external contact to switch the integrated circuit device into a safe mode upon application of a predetermined electrical state at the external contact is described.

Abstract: A semiconductor product including a substrate, a semiconductor chip fitted to the substrate, and a layer, which contains coated particles, located adjacent to the semiconductor chip, wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.

Abstract: An integrated circuit arrangement including a nonplanar substrate on which an integrated circuit is formed on at least one side, wherein the side of the substrate a which has the integrated circuit is arranged on a carrier and the carrier is produced from a chemically resistant material.

Abstract: A system has a circuit board, an integrated circuit being mounted on the circuit board by external contacts, and a cover irreversibly connected to the circuit board. The cover covers the external contacts so that external access to the external contacts is prohibited by the cover.

Abstract: A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.

Abstract: A method for producing semiconductor chips has the following steps for this purpose: firstly, a semiconductor wafer having a multiplicity of semiconductor chip positions arranged in rows and columns is provided, wherein the semiconductor wafer has on its front side front sides of semiconductor chips with integrated circuits. The rear side of the semiconductor wafer is provided with a coating having Parylene. The semiconductor wafer is subsequently singulated into semiconductor chips having rear sides on which the coating having Parylene is arranged.

Abstract: A module (100) is described having a semiconductor chip (1) which has at least one contact pad (2). A first dielectric layer (3), which contains a fluorocarbon compound, as well as a first wiring layer (4) are applied to the semiconductor chip (1).

Abstract: The invention relates to a semiconductor device (1) comprising a semiconductor chip stack (2) and a plastic housing (3), and to methods for producing the semiconductor device (1). The semiconductor device (1) is constructed on a device carrier (4), on which a first semiconductor chip (5) is fixed by its rear side (6). At least one second semiconductor chip (8) is adhesively bonded by its rear side (9) on the top side (7) of the first semiconductor chip (5) by means of an adhesive layer (10). A second plastic composition (17) is arranged between a first plastic housing composition (11) of the plastic housing (3) and the edge sides (12, 13) of the adhesive layer and the edge sides (14, 15) of the second semiconductor chip (8) and also the top side (16) of the second semiconductor chip (8) in such a way that the first plastic housing composition (11) has no physical contact with the second semiconductor chip (8) and with the adhesive layer (10).

Abstract: A substrate including strip conductors with a wiring pattern that connects contact areas to one another. The strip conductors have a small strip conductor width. The contact areas and/or the strip conductors form a narrow connection pitch and include electrically conductive carbon nanotubes.

Abstract: The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 ?m, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.

Abstract: A chip module with a substrate having a top side, a chip mounted on the top side of the substrate, and an encapsulation includes an encapsulation material. The encapsulation is applied on the chip and the top side of the substrate in such a way that the chip and the top side of the substrate are at least partly covered. The encapsulation material includes a polymer composition having at least a first polymer component and a second polymer component which are chemically covalently bonded by means of a crosslinker, the first polymer component imparting resistance toward a first class of chemically reactive compounds and the second polymer component imparting resistance toward a second class of chemically reactive compounds, the reactivities differing between the first and second classes of chemically reactive compounds.

Abstract: The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 ?m, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.