Patents by Inventor Manfred Pfaffenlehner

Manfred Pfaffenlehner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10497801
    Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm?3 and 5×1014 cm?3.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: December 3, 2019
    Assignee: Infineon Technologies AG
    Inventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
  • Publication number: 20190237575
    Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 1, 2019
    Inventors: Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner
  • Publication number: 20190157435
    Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm?3 and 5×1014 cm?3.
    Type: Application
    Filed: January 25, 2019
    Publication date: May 23, 2019
    Inventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
  • Patent number: 10211325
    Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm?3 and 5×1014 cm?3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: February 19, 2019
    Assignee: Infineon Technologies AG
    Inventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
  • Publication number: 20180114830
    Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminals and including a drift region with dopants of a first conductivity type. An active region has at least one power cell extending at least partially into the semiconductor body, is electrically connected with the first load terminal and includes a part of the drift region. Each power cell includes a section of the drift region and is configured to conduct a load current between the terminals and to block a blocking voltage applied between the terminals. A chip edge laterally terminates the semiconductor body. A non-active termination structure arranged in between the chip edge and active region includes an ohmic layer. The ohmic layer is arranged above a surface of the semiconductor body, forms an ohmic connection between electrical potentials of the first and second load terminals, and is laterally structured along the ohmic connection.
    Type: Application
    Filed: October 24, 2017
    Publication date: April 26, 2018
    Inventors: Erich Griebl, Frank Wolter, Andreas Moser, Manfred Pfaffenlehner
  • Patent number: 9825136
    Abstract: A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: November 21, 2017
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Josef Niedernostheide, Manfred Pfaffenlehner, Frank Dieter Pfirsch, Hans-Joachim Schulze, Holger Schulze, Christoph Weiss
  • Publication number: 20170317165
    Abstract: An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.
    Type: Application
    Filed: April 25, 2017
    Publication date: November 2, 2017
    Inventors: Philip Christoph Brandt, Andre Rainer Stegner, Francisco Javier Santos Rodriguez, Frank Dieter Pfirsch, Hans-Joachim Schulze, Manfred Pfaffenlehner, Thomas Auer
  • Patent number: 9385181
    Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: July 5, 2016
    Assignee: Infineon Technologies AG
    Inventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
  • Patent number: 9177829
    Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: November 3, 2015
    Assignee: Infineon Technologoies AG
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner, Markus Schmitt
  • Publication number: 20150303260
    Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.
    Type: Application
    Filed: April 6, 2015
    Publication date: October 22, 2015
    Inventors: Franz Josef Niedernostheide, Manfred Pfaffenlehner, Hans-Joachim Schulze, Holger Schulze, Frank Umbach, Christoph Weiss
  • Publication number: 20150263106
    Abstract: A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.
    Type: Application
    Filed: March 10, 2015
    Publication date: September 17, 2015
    Inventors: Franz Josef Niedernostheide, Manfred Pfaffenlehner, Frank Dieter Pfirsch, Hans-Joachim Schulze, Holger Schulze, Christoph Weiss
  • Publication number: 20150214347
    Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm?3 and 5×1014 cm?3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.
    Type: Application
    Filed: January 28, 2014
    Publication date: July 30, 2015
    Inventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
  • Publication number: 20150206983
    Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 23, 2015
    Inventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
  • Publication number: 20150076597
    Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
    Type: Application
    Filed: September 15, 2014
    Publication date: March 19, 2015
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner, Markus Schmitt
  • Patent number: 8828810
    Abstract: A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: September 9, 2014
    Assignee: Infineon Technologies Austria AG
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner
  • Patent number: 8367532
    Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: February 5, 2013
    Assignee: Infineon Technologies AG
    Inventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
  • Publication number: 20120315747
    Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
    Type: Application
    Filed: July 26, 2012
    Publication date: December 13, 2012
    Inventors: Anton MAUDER, Hans-Joachim SCHULZE, Frank HILLE, Holger SCHULZE, Manfred PFAFFENLEHNER, Carsten SCHÄFFER, Franz-Josef NIEDERNOSTHEIDE
  • Patent number: 8252671
    Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: August 28, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaeffer, Franz-Josef Niedernostheide
  • Publication number: 20120202332
    Abstract: A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.
    Type: Application
    Filed: April 17, 2012
    Publication date: August 9, 2012
    Applicant: Infineon Technologies Austria AG
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner
  • Patent number: 8159022
    Abstract: A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: April 17, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner