Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.

Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Abstract: A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm?3 and 5×1014 cm?3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.

Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.

Abstract: A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.

Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

Abstract: A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.

Abstract: A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.

Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

Abstract: A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.

Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

Abstract: A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.

Abstract: A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

Abstract: A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.

Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.