Patents by Inventor Manish Khandelwal
Manish Khandelwal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11820654Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.Type: GrantFiled: August 23, 2021Date of Patent: November 21, 2023Assignee: L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi, Grigory Nikiforov, David Orban
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Patent number: 11780859Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: February 4, 2022Date of Patent: October 10, 2023Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Stephens, Manish Khandelwal
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Patent number: 11739220Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: GrantFiled: February 21, 2019Date of Patent: August 29, 2023Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson, Grigory Nikiforov
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Patent number: 11699584Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.Type: GrantFiled: March 10, 2021Date of Patent: July 11, 2023Assignee: L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi
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Patent number: 11492364Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.Type: GrantFiled: March 31, 2020Date of Patent: November 8, 2022Assignee: ENTEGRIS, INC.Inventors: Manish Khandelwal, Thomas H. Baum
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Patent number: 11407922Abstract: Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.Type: GrantFiled: March 23, 2017Date of Patent: August 9, 2022Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Manish Khandelwal, Sean Kerrigan, Jean-Marc Girard, Antonio Sanchez, Peng Zhang, Yang Wang
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Publication number: 20220153762Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X ?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Inventors: Antonio SANCHEZ, Gennadiy Itov, Peng Zhang, Matthew Stephens, Manish Khandelwal
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Patent number: 11312739Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)?SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4?y.Type: GrantFiled: April 2, 2020Date of Patent: April 26, 2022Assignee: ENTEGRIS, INC.Inventors: Thomas H. Baum, Manish Khandelwal, David Kuiper
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Patent number: 11274112Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si—containing films.Type: GrantFiled: October 14, 2019Date of Patent: March 15, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Patent number: 11261202Abstract: Selective reduction methods for halogenated carbosilanes and carbodisilanes are disclosed. More particularly, high yields of the desired carbosilanes and carbodisilanes are obtained by reduction of their halogenated counterparts using a reducing agent and tetrabutylphosphonium chloride (TBPC) as a catalyst.Type: GrantFiled: April 7, 2017Date of Patent: March 1, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Manish Khandelwal, Reno Pesaresi, Jean-Marc Girard
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Publication number: 20210395890Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.Type: ApplicationFiled: August 23, 2021Publication date: December 23, 2021Inventors: Jean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennadiy ITOV, Reno PESARESI, Grigory NIKIFOROV, David ORBAN
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Patent number: 11203604Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.Type: GrantFiled: December 6, 2019Date of Patent: December 21, 2021Assignee: Entegris, Inc.Inventors: David Kuiper, Manish Khandelwal, Thomas M. Cameron, Thomas H. Baum, John Cleary
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Patent number: 11203528Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: GrantFiled: March 11, 2020Date of Patent: December 21, 2021Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
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Publication number: 20210300952Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.Type: ApplicationFiled: March 31, 2020Publication date: September 30, 2021Inventors: Manish KHANDELWAL, Thomas H. BAUM
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Patent number: 11124876Abstract: Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.Type: GrantFiled: June 21, 2019Date of Patent: September 21, 2021Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi, Grigory Nikiforov, David Orban
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Publication number: 20210225635Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.Type: ApplicationFiled: March 10, 2021Publication date: July 22, 2021Inventors: Jean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennadiy ITOV, Reno PESARESI
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Patent number: 10988490Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.Type: GrantFiled: October 3, 2019Date of Patent: April 27, 2021Assignee: ENTEGRIS, INC.Inventors: Manish Khandelwal, David Kuiper, Thomas H. Baum
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Publication number: 20210102092Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2?)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: April 8, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV
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Publication number: 20210101917Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.Type: ApplicationFiled: October 3, 2019Publication date: April 8, 2021Inventors: Manish KHANDELWAL, David KUIPER, Thomas H. BAUM
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Publication number: 20210087406Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: March 25, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV