Abstract: A bias generator is tested in an I.sub.DDQ -scheme by applying each respective one of the bias voltages to a respective PFET that is individually gated by a respective NFET. This permits measuring the quiescent currents. Any deviation in the bias voltages is translated into a deviation of the quiescent current.

Abstract: An IC is tested through I.sub.DDQ -measurements. The IC's substrate includes a region of a conductivity type with a supply node for supply of the circuit and with a biasing node for connection to a biasing voltage to bias the region. I.sub.DDQ -testing of the circuit is conducted while the supply node and the biasing node are galvanically disconnected to separate the contribution to the quiescent current from the circuit functionality features from the contribution to the quiescent current from the biasing features.

Abstract: An SRAM has a plurality of respective memory cells coupled to a respective one of a plurality of word lines and to a pair of bit lines. The SRAM comprises I.sub.DDQ test means to render the word lines active in parallel by cumulatively increasing a number of active ones among the word lines. This permits the writing of a specific logic state in all cells of a column through the tiny bit line drivers that are progressively assisted by the cells already written, thus avoiding the use of additional heavy write circuitry for I.sub.DDQ test purposes only.

Abstract: An electronic circuit includes an array of a number of memory cells that are functionally organized in rows and columns. The circuit includes test circuitry that is selectively operative to access all cells of the array in parallel. An I.sub.DDQ -test then discovers whether or not there is a defect in any of the cells. This results in a test circuit which is faster, more efficient and more economical than previously-available circuits.