Abstract: A magnetic memory device comprises a cylindrical core and a plurality of layers surrounding the core. The plurality of layers include a metallic buffer layer, a ferromagnetic storage layer, a barrier layer, and a ferromagnetic reference layer. The cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction. A magnetization of the ferromagnetic layer storage parallels an interface between the metallic buffer layer and ferromagnetic storage layer.

Abstract: Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.

Abstract: A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a metallic buffer layer that surrounds the cylindrical core, (iii) a first ferromagnetic layer that surrounds the metallic buffer layer, (iv) a barrier layer that surrounds the first ferromagnetic layer, and (v) a second ferromagnetic layer that surrounds the barrier layer. The cylindrical core, the metallic buffer layer, the first ferromagnetic layer, the barrier layer, and the second ferromagnetic layer collectively form a magnetic tunnel junction.

Abstract: The various implementations described herein include magnetic memory devices and systems, and methods for injecting defects into the devices and systems. In one aspect, a magnetic memory device comprises a non-magnetic cylindrical core, a first portion, and a second portion. The core is configured to receive a current. The first portion surrounds the core and is configured to introduce magnetic instabilities into the second portion. The second portion is adjacent to and arranged in a stack with respect to the first portion. The second portion also surrounds the core and is configured to store information based on a respective position of the magnetic instabilities. The second portion comprises a first plurality of magnetic layers and a first plurality of non-magnetic layers. Respective magnetic layers of the first plurality of magnetic layers are separated by respective non-magnetic layers of the plurality of non-magnetic layers.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: A computing device receives first data on which to train an artificial neural network (ANN). Using magnetic random access memory (MRAM), the computing device trains the ANN by performing a first set of training iterations on the first data. Each of the first set of iterations includes writing values for a set of weights of the ANN to the MRAM using first write parameters corresponding to a first write error rate. After performing the first set of iterations, the computing device performs a second set of training iterations on the first data. Each of the second set of iterations includes writing values for the set of weights of the ANN to the MRAM using second write parameters corresponding to a second write error rate. The second write error rate is lower than the first write error rate. The computing device stores values for the trained ANN.

Abstract: A computing device includes one or more processors, a first random access memory (RAM) comprising magnetic random access memory (MRAM), a second random access memory of a type distinct from MRAM, and a non-transitory computer-readable storage medium storing instructions for execution by the one or more processors. The computing device receives first data on which to train an artificial neural network (ANN) and trains the ANN by, using the first RAM comprising the MRAM, performing a first set of training iterations to train the ANN using the first data, and, after performing the first set of training iterations, using the second RAM of the type distinct from MRAM, performing a second set of training iterations to train the ANN using the first data. The computing device stores values for the trained ANN. The trained ANN is configured to classify second data based on the stored values.

Abstract: A method for forming three-dimensional magnetic memory arrays by forming crystalized silicon structures from amorphous structures in the magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSi2 or CoSi2 and also causes the underlying amorphous silicon to crystallize.

Abstract: The various implementations described herein include magnetic memory devices and systems, and methods for propagating defects in the devices and systems. In one aspect, a magnetic memory device comprises a non-magnetic cylindrical core configured to receive a current, a plurality of magnetic layers surrounding the core, and a plurality of non-magnetic layers also surrounding the core. The magnetic layers and the non-magnetic layers are arranged in a stack coaxial with the core. Respective magnetic layers of the plurality of magnetic layers are separated by respective non-magnetic layers of the plurality of non-magnetic layers. The device further comprises an input terminal coupled to a first end of the core and a current source coupled to the input terminal. The current source is configured to supply current imparting a Spin Hall Effect (SHE) around the circumference of the core, and the SHE contributes to a magnetization of the magnetic layers.

Abstract: A magnetic memory element having voltage controlled magnetic anisotropy for active control of switching energy (delta). The magnetic memory element can be formed as a pillar structure having a magnetic free layer a magnetic reference layer and a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer. A dielectric wall is formed around the side of the magnetic free layer and an electrically conductive program line is formed around the dielectric wall, such that the dielectric wall separates the program line from the magnetic free layer. The electrically conductive program line is electrically connected with circuitry to selectively apply a gate voltage to the electrically conductive program line and across the dielectric layer. The circuitry can include a voltage source switching circuitry such as a transistor. The gate voltage advantageously reduces perpendicular magnetic anisotropy in the magnetic free layer, thereby reducing switching energy.

Abstract: The various implementations described herein include magnetic memory devices and systems, and methods for injecting defects into the devices and systems. In one aspect, a magnetic memory device comprises a non-magnetic cylindrical core, a first portion, and a second portion. The core is configured to receive a current. The first portion surrounds the core and is configured to introduce magnetic instabilities into the second portion. The second portion is adjacent to and arranged in a stack with respect to the first portion. The second portion also surrounds the core and is configured to store information based on a respective position of the magnetic instabilities. The second portion comprises a first plurality of magnetic layers and a first plurality of non-magnetic layers. Respective magnetic layers of the first plurality of magnetic layers are separated by respective non-magnetic layers of the plurality of non-magnetic layers.

Abstract: A magnetic memory element having voltage controlled magnetic anisotropy for active control of switching energy (delta). The magnetic memory element can be formed as a pillar structure having a magnetic free layer a magnetic reference layer and a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer. A dielectric wall is formed around the side of the magnetic free layer and an electrically conductive program line is formed around the dielectric wall, such that the dielectric wall separates the program line from the magnetic free layer. The electrically conductive program line is electrically connected with circuitry to selectively apply a gate voltage to the electrically conductive program line and across the dielectric layer. The circuitry can include a voltage source switching circuitry such as a transistor. The gate voltage advantageously reduces perpendicular magnetic anisotropy in the magnetic free layer, thereby reducing switching energy.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to program the state of a corresponding one of N cell elements of the MBC to a respective state parameter value. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: An apparatus includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a second MTJ having a second magnetic characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first MTJ. The second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second MTJ, The apparatus further includes a metallic separator coupling the first MTJ with the second MTJ, wherein the first MTJ and the second MTJ are arranged in series.

Abstract: A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.