Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: According to one embodiment, a magnetic head includes a magnetic pole, and a first shield, and a stacked body provided between the magnetic pole and the first shield. The stacked body includes a first layer, a second layer and a third layer. The first layer includes at least one first element selected from the group consisting of Fe, Co, and Ni. The second layer is provided between the magnetic pole and the first layer, and includes at least one second element selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third layer is provided between the first layer and the first shield, and includes at least one third element selected from the group consisting of Cr, V, Mn, Ti, and Sc.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first nonmagnetic layer. The stacked body includes first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer and being nonmagnetic. The first nonmagnetic layer is provided between the second magnetic layer and the magnetic pole. A product of a thickness and a saturation magnetic flux density of the second magnetic layer is larger than a product of a thickness and a saturation magnetic flux density of the first magnetic layer. The length of the first magnetic layer is shorter than a length of the second magnetic layer. A current flows from the second magnetic layer toward the first magnetic layer.

Abstract: A microwave-assisted magnetic recording head includes a main magnetic pole, an auxiliary magnetic pole facing the main magnetic pole with a gap therebetween, and a stacked-layer element disposed in the gap. The stacked-layer element includes, in the order from the main magnetic pole to the auxiliary magnetic pole, a thermal spin injection layer that is formed on the main magnetic pole, exchange-coupled with the main magnetic pole, and formed of a magnetic material of which spin-dependent Seebeck coefficient is negative, a first non-magnetic layer formed on the thermal spin injection layer, an oscillation layer formed on the first non-magnetic layer, a second non-magnetic layer formed on the oscillation layer, and a spin injection layer formed on the second non-magnetic layer.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first nonmagnetic layer. The stacked body includes first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer and being nonmagnetic. The first nonmagnetic layer is provided between the second magnetic layer and the magnetic pole. A product of a thickness and a saturation magnetic flux density of the second magnetic layer is larger than a product of a thickness and a saturation magnetic flux density of the first magnetic layer. The length of the first magnetic layer is shorter than a length of the second magnetic layer. A current flows from the second magnetic layer toward the first magnetic layer.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: A magnetic recording head includes a main magnetic pole in which a recording magnetic field is generated, a write shield magnetic pole disposed alongside the main magnetic pole with a gap therebetween, a spin torque oscillator disposed within the gap and configured to generate a microwave, an anti-ferromagnetic layer disposed within the gap between the write shield magnetic pole and the spin torque oscillator, and a non-magnetic metal layer disposed within the gap between the spin torque oscillator and the anti-ferromagnetic layer.

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.

Abstract: According to one embodiment, a microwave-assisted magnetic recording head includes a SIL formed either in an area outside a FGL in a track width direction or in an area outside a FGL in a depth direction perpendicular to an air bearing surface of the FGL. An area between the SIL and the FGL can be enlarged, and an intermediate layer can be formed therebetween such that an area in which the intermediate layer contacts the FGL can be enlarged as well.

Abstract: A magnetic recording head includes a main magnetic pole in which a recording magnetic field is generated, a write shield magnetic pole disposed alongside the main magnetic pole with a gap therebetween, a spin torque oscillator disposed within the gap and configured to generate a microwave, an anti-ferromagnetic layer disposed within the gap between the write shield magnetic pole and the spin torque oscillator, and a non-magnetic metal layer disposed within the gap between the spin torque oscillator and the anti-ferromagnetic layer.