Abstract: One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: One embodiment relates to a solid-state charged-particle detector. The detector includes a PIN diode and a conductive coating on the front-side of the PIN diode, wherein the front-side receives incident charged particles to be detected. In addition, the detector includes a metal layer on the backside of the PIN diode and electrical connections to the metal layer and to the conductive coating. Other embodiment are also disclosed.

Abstract: A substrate inspection system of a type that receives substrates disposed within a cassette and inspects a planar surface of the substrates with a read head, where the substrates are inspected while they are disposed within the cassette, and the read head is of a size to fit between adjacent substrates within the cassette. In this manner, the substrates do not need to be removed from the cassette, and no robotic arm is required to do so.

Abstract: A method of increasing consistency between separate parametric measurement readings that are taken with an electron beam imaging tool at different times within a period of time, by correcting drift in the imaging tool at a time frequency that is less than a time period during which the drift is anticipated to be undesirably large.

Abstract: One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.

Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: One embodiment relates to an electron beam apparatus for inspecting or reviewing a manufactured substrate. The apparatus includes a cathode, an extraction electrode, a lens electrode, an anode, deflectors, electron lenses, and a detector. The extraction voltage is positive relative to the cathode voltage, such that electrons are emitted from the cathode. Advantageously, the lens voltage is positive relative to the extraction voltage, such that electrons are accelerated from the extraction electrode to the lens electrode while the electrons are condensed to form an electron beam. The electron beam is transmitted through an opening of the anode and is controllably deflected to scan it over an area of the surface. The detector detects secondary electrons from the substrate so as to form an image of the scanned area. Other embodiments and features are also disclosed.

Abstract: One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.

Abstract: Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.

Abstract: One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.

Abstract: One embodiment relates to a portable scanning electron microscope (SEM) system. The system includes a portable SEM device including a CRT-type gun and deflectors to generate and scan the electron beam. Another embodiment relates to a portable SEM device which includes a CRT-type gun and deflectors to generate and scan the electron beam, a chamber through which the electron beam is scanned, and a detector in the chamber for detecting radiation emitted as a result of scanning the electron beam. Another embodiment relates to a method of obtaining an electron beam image of a surface of a bulk specimen where a portable SEM device is moved to the bulk specimen. Other embodiments and features are also disclosed.

Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.