Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: One embodiment disclosed relates to an electron beam imaging apparatus. An electron source is configured to generate an electron beam, and a beam-limiting aperture is configured to block a portion of the electron beam and to allow transmission of another portion of the electron beam through the aperture. A first detector is configured to detect scattered electrons emitted by the aperture due to the blocked portion of the electron beam. The imaging apparatus may also include a second detector configured to detect scattered electrons emitted by the sample due to impingement of the transmitted portion of the electron beam. A gain control device may also be included to adjust a gain of a detected signal derived from the second detector using a control signal derived from the first detector. Another embodiment disclosed relates to an electron beam lithography apparatus. The lithography apparatus may adjust a pixel dwell time based on a control signal derived from the scattered electrons emitted by the aperture.

Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

Abstract: One embodiment disclosed relates to a method of setting a surface charge of an area on a substrate to a desired level. The substrate is held on a stage, and a stage bias voltage applied to the stage is controlled. A flood of electrons is directed to the area. The stage bias voltage is controlled such that the surface charge of the area reaches an equilibrium at the desired level. Another embodiment disclosed relates to a method of auto-focusing a main electron beam incident upon an imaging area of a substrate. A monitor electron beam is generated and directed towards a monitoring area of the substrate at a non-perpendicular incidence angle. An in-focus band in data collected from the monitor beam is detected. The focal length of an objective lens focusing the main beam is adjusted based upon a position of the in-focus band.

Abstract: A method for inspecting samples uses a multiple beam electron system having a uniform magnetic focusing field. Deflection of the incident electron beams is produced by deflector plates generating an electrostatic deflection force which produces a uniform force on the electron beams. Thermal field emission sources generate incident electron beams towards at least two portions of the sample. A detector array collects multiple detection electrons.

Abstract: Disclosed is a method and apparatus for generating an image from a sample. The apparatus includes a charged particle beam generator arranged to generate and control a charged particle beam substantially towards a portion of the sample and a detector arranged to detect charged particles originating from the sample portion to allow generation of an image from the detected charged particles. The apparatus further includes a measurement device arranged to measure a characteristic of the sample portion to obtain a surface voltage value of the sample portion that is exposed to the charged particle beam. For example, the measurement device is an electrostatic voltmeter positioned to obtain a surface voltage value of the exposed sample portion. A charged particle beam is directed substantially towards a portion of the sample under a first set of operating conditions. A surface charge value of the sample portion is obtained under the first set of operating conditions.

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam.

Abstract: Systems and methods for determining the height of a surface of a specimen, such as a surface of a semiconductor device wafer are provided. A system may be configured to generate a comparison signal that may used to alter a Z-axis fine height adjustment of the system. The system may include for example, a processing tool, a metrology tool, or an inspection tool that may be used in semiconductor device fabrication. In this manner, the system may be configured to maintain a constant working distance between the wafer surface and an optical column of the system. A system may include an off-axis dual beam symmetric height sensor due to mechanical constraints of the system. The dual beam symmetric height sensor may provide automatic focusing of the wafer with high precision by substantially eliminating wafer pattern-induced error in comparison signals generated by the system.

Abstract: A method and apparatus for generating an image of a sample with a electron beam apparatus is disclosed. The image is generated from a portion of the sample with a measurement device having a source unit for directing an electron beam substantially towards the sample. The measurement device also has a detector for detecting particles that are emitted from the sample, an electrode proximal to the sample having a hole through which the electron beam and a portion of the emitted particles may pass, and an image generator for generating the image of the sample from the detected particles. A first voltage is applied to the electrode when the electron beam is substantially in a center of the hole. The first voltage is selected to control positive charge build up on the sample. A second voltage is applied to the electrode when the electron beam is deflected a predetermined distance from the center of the hole.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam.

Abstract: A multi-segment filter system is provided for continuous filtration of high viscosity materials, such as polymer melts. In particular, each segment comprises a filter screen positioned between a bottom breaker plate and a top cover plate. The filter screen has a fixed alignment in relation to the breaker plate and cover plate, to prevent the formation of undesirable gaps. In one example, the alignment is fixed through positioning of pins extending from the breaker plate and passing through apertures in the filter screen and cover plate. Two pins are preferably positioned on the breaker plate in a nonsymmetric manner to ensure that a multilayered filter screen is positioned adjacent the breaker plate in a desired orientation. Successive segments are positioned on end and preferably include overlapped filter screen portions, thus eliminating any gaps between each segment. Overlapping coupling connections may also be provided in adjacent breaker plates.

Abstract: Systems, methods and computer program products detect a position of a new alignment mark on a substrate by producing an alignment signal model from sample alignment signals and fitting the new alignment signal to the alignment signal model. The alignment signal model may be produced from the multiple sample alignment signals using singular value decomposition, based on subspace decomposition of the alignment signals. By producing an alignment signal model from multiple sample alignment signals, asymmetries in the sample alignment marks and/or in the coatings that are fabricated on the sample alignment marks, may be taken into account when detecting the position of a new alignment mark.

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.

Abstract: An X-ray mask membrane 12 is discussed wherein a cantilever and tip portion such as used on an atomic force or scanning tunneling microscope are fabricated directly as part of the mask. The mask is located over a wafer and the vertical (z) motion of the tip with respect to the wafer is achieved with a piezoelectric device which is mounted on a movable support above the cantilever. Piezoelectric device may be a tube having an electrode divided into quadrants so that the end of the tube could be positioned in three dimensions to allow for alignment of the end of the tube to the cantilever tip. X and Y motion of the tip and the mask membrane relative to the wafer is achieved by mounting the wafer on an x-y stage driven by piezoelectric or other transducers. The wafer includes a raised alignment mask on its upper surface. The wafer, mask membrane, and z piezoelectric tube are held rigidly but adjustably with respect to each other by a mechanical fixture.

Abstract: An electrical probe which incorporates a scanning proximity microscope for probing the sub-micron features of an integrated circuit. An optical microscope is provided to find the general region of interest, and a piezoelectric tube scanner which controls the position of the probe is disposed at an acute angle to the substrate, so as not to obscure the view of the optical microscope. A number of such probes may be located around the integrated circuit.

Abstract: The present invention is an improved mechanism for the coarse adjustment of a scanning tunneling microscope stage. In the present invention the stage is moved by forces transmitted through rigid wire springs mounted on leaf spring assemblies which transmit the motion from rigidly mounted micrometer adjusting devices. It is intended that the coarse adjustment mechanism of the present invention will provide improved performance over coarse adjustment mechanisms presently available for STM applications.The present invention replaces separate sets of leaf springs for X and Y motion with a single set of four wire springs. This simplifies the design and increases the rigidity and stability by reducing the mechanical path length from the solid base to the X-Y-Z stage. The screw mechanisms are all directly connected to the rigid base. (This is made possible by the additional pairs of wire springs connected from the X and Y screws to the stage.