Abstract: The disclosure provides a plasma source and an excitation system for excitation of a plasma, and an optical monitoring system. In one embodiment the plasma source includes: (1) a coaxial resonant cavity body having an inner length, and including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency signal interface electrically coupled to the inner and outer electrodes at a fixed position along the inner length and configured to provide a radio frequency signal to the coaxial resonant cavity body, (3) a window positioned at the first end of the coaxial resonant cavity body, and (4) a mounting flange positioned proximate the window at the first end of the coaxial resonant cavity body and defining a plasma cavity, wherein the window forms one side of the plasma cavity and isolates the coaxial resonant cavity body from plasma in the plasma cavity.

Abstract: An optical system having an OAP mirror collimator is disclosed with a housing, an OAP mirror located within the housing and has an optical axis, a fold plane and a focal point. A fiber optical cable is coupled to the housing and has first and second optical fibers, each having an exit end that form a common end face of the fiber optic cable, wherein the fiber optical cable is rotationally and translationally aligned to the OAP mirror such that the common face is perpendicular to and centered upon the optical axis of the OAP mirror and positioned a fixed distance from the focal point, and wherein the optical axes of the first and second optical fibers are jointly angularly aligned to the fold plane, and the optical axes of the first and second optical fibers deviate from being parallel to the optical axis by no more than 0.15 degrees.

Abstract: An optical system having an OAP mirror collimator is disclosed with a housing, an OAP mirror located within the housing and has an optical axis, a fold plane and a focal point. A fiber optical cable is coupled to the housing and has first and second optical fibers, each having an exit end that form a common end face of the fiber optic cable, wherein the fiber optical cable is rotationally and translationally aligned to the OAP mirror such that the common face is perpendicular to and centered upon the optical axis of the OAP mirror and positioned a fixed distance from the focal point, and wherein the optical axes of the first and second optical fibers are jointly angularly aligned to the fold plane, and the optical axes of the first and second optical fibers deviate from being parallel to the optical axis by no more than 0.15 degrees.

Abstract: The disclosure provides a plasma source, an excitation system for excitation of a plasma, and a method of operating an excitation measurement system. In one embodiment, the plasma source includes: (1) a coaxial radio frequency (RF) resonator including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency interface electrically coupled to the inner and outer electrode and configured to provide an RF signal to the coaxial RF resonator, (3) a flange positioned at the first end of the resonator and defining a plasma cavity, and (4) a window positioned between the first end of the resonator and the flange, and forming one side of the plasma cavity, whereby the coaxial RF resonator is isolated from the plasma.

Abstract: The disclosure provides a plasma source and an excitation system for excitation of a plasma, and an optical monitoring system. In one embodiment the plasma source includes: (1) a coaxial resonant cavity body having an inner length, and including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency signal interface electrically coupled to the inner and outer electrodes at a fixed position along the inner length and configured to provide a radio frequency signal to the coaxial resonant cavity body, (3) a window positioned at the first end of the coaxial resonant cavity body, and (4) a mounting flange positioned proximate the window at the first end of the coaxial resonant cavity body and defining a plasma cavity, wherein the window forms one side of the plasma cavity and isolates the coaxial resonant cavity body from plasma in the plasma cavity.

Abstract: The disclosure provides a plasma source, an excitation system for excitation of a plasma, and a method of operating an excitation measurement system. In one embodiment, the plasma source includes: (1) a coaxial radio frequency (RF) resonator including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency interface electrically coupled to the inner and outer electrode and configured to provide an RF signal to the coaxial RF resonator, (3) a flange positioned at the first end of the resonator and defining a plasma cavity, and (4) a window positioned between the first end of the resonator and the flange, and forming one side of the plasma cavity, whereby the coaxial RF resonator is isolated from the plasma.

Abstract: A self referencing heterodyne reflectometer is disclosed which rapidly alternates between a heterodyne reflectometry (HR) mode, in which an HR beam comprised of s- and p-polarized beam components at split angular frequencies of ? and ?+?? is employed, and a self referencing (SR) mode, in which an SR beam comprised of p-polarized beam components at split angular frequencies of ? and ?+?? is employed. Alternatively, in SR operating mode the SR beam is replaced by a p-polarized amplitude modulated (AM) beam, operating at two modulated amplitudes of ? and ?+?? at a single frequency, ??. When the two measurements are made in rapid succession, using an optical chopper switcher, temperature induced noise in the detector is be assumed to be equivalent. Film phase shift information is derived from the measured phase shift ?Ref/film, generated from the HR beam, and the reference phase shift ?Ref/Sub, generated from the SR/AM beam, which are used for calculating film thickness.

Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.

Abstract: For use with a chemical mechanical polishing apparatus for polishing a semiconductor wafer having a platen, a polishing pad and a wafer carrier, an optical closed-loop control system. In one embodiment, the system includes a plurality of optical probes impacting a corresponding probe window and rigidly mountable through the platen. The system also includes a flash lamp configured to provide light to each of the plurality of optical probes and minimize an exposure time of the light onto the semiconductor wafer, a spectrograph configured to spatially image light received by each of the plurality of optical probes to a common charge-coupled device and produce real-time spectral reflectometry data therefrom. The system further includes a control subsystem configured to analyze the real-time spectral reflectometry data and determine at least one wafer state parameter therefrom, and cause the polishing to be adjusted based upon the at least one wafer state parameter.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Abstract: A method and apparatus for optical multi-angle in situ CMP endpoint detection include a sensor block having light emitting channels, light receiving channels and an opening where the light emitting channels terminate and the light receiving channels originate and means for determining endpoint based on the amount of reflected light that is received from the light receiving channels. At least a portion of the sensor block is embedded in a polishing pad backer such that the light emitting channels can emit light through a polishing pad window to the surface of a wafer and the light receiving channels can receive light reflected from the wafer surface through the polishing pad window. Connectors may be used to connect a light source to the light emitting channels and a light detector to the light receiving channels.

Abstract: A method and apparatus for the in-process measurement of the thickness and composition of a material layer on a workpiece during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing pad mounted thereto and an x-ray probe assembly mounted into a recessed volume in the platen. The x-ray probe assembly includes an x-ray emitter and an x-ray detector. The thickness and composition of the material layer on the workpiece is measured by generating and directing an incident x-ray beam onto a location on the surface of the wbrkpiece, and then capturing the resultant fluorescent beam and processing data from the resultant fluorescent beam.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.