Abstract: The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Abstract: A method and apparatus for optical multi-angle in situ CMP endpoint detection include a sensor block having light emitting channels, light receiving channels and an opening where the light emitting channels terminate and the light receiving channels originate and means for determining endpoint based on the amount of reflected light that is received from the light receiving channels. At least a portion of the sensor block is embedded in a polishing pad backer such that the light emitting channels can emit light through a polishing pad window to the surface of a wafer and the light receiving channels can receive light reflected from the wafer surface through the polishing pad window. Connectors may be used to connect a light source to the light emitting channels and a light detector to the light receiving channels.

Abstract: A method and apparatus for the in-process measurement of the thickness and composition of a material layer on a workpiece during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing pad mounted thereto and an x-ray probe assembly mounted into a recessed volume in the platen. The x-ray probe assembly includes an x-ray emitter and an x-ray detector. The thickness and composition of the material layer on the workpiece is measured by generating and directing an incident x-ray beam onto a location on the surface of the wbrkpiece, and then capturing the resultant fluorescent beam and processing data from the resultant fluorescent beam.

Abstract: An improved workpiece carrier assembly includes a workpiece retaining assembly having a plurality of distinct retaining elements rather than a one-piece retaining ring. In accordance with one embodiment, a plurality of retaining segments reside within a like plurality of channels. The retaining segments may be individually or collectively controlled by a pressurized fluid system. In accordance with an alternate embodiment, a plurality of retaining pins reside within a like plurality of guide sleeves. The retaining pins may be individually or collectively controlled by a pressurized fluid system.

Abstract: A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.

Abstract: A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtexture and micro-topology of the surface to produce a desired surface contour or planarity. This precise conditioning of the microscopic features of the polishing pad surface controls dishing in workpieces during polishing.

Abstract: Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing material attached thereto and a distance measurement device attached to the platen. The distance measurement device includes a light source and a light sensor. Distance between the device and the workpiece is measured by transmitting light through apertures formed within the platen and the polishing material toward the workpiece and focusing the light reflected from the workpiece on an element within the sensor.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.