Abstract: A method of mutually aligning first and second imaging system fixturing components forms a first alignment structure on the first imaging system fixturing component, a second alignment structure on the second imaging system fixturing component, and engages the first and second alignment structures to align, with optical accuracy, the first and second imaging system fixturing components.

Abstract: Technologies are generally described for providing inductively removable assembly bonding. Inductive elements may be placed strategically at bonding locations between two or more coupled components. At disassembly time, the elements may be heated through Radio Frequency (RF) energy causing the bonds to break and components to separate. For example, inductive elements placed near plastic stake bonds between dissimilar materials in an electronic device may be employed to separate the dissimilar materials during a recycling process. According to some examples, the elements may also be heated through a directly applied electric current via a network of connections designed into the assembly.

Abstract: Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

Abstract: A multilayer optical device includes an arrangement, on a substrate, of a first layer, a second layer, and a space therebetween. The second layer is a thin-film. The arrangement of the first and second layers and the space therebetween produces transmitted, reflected, or dispersed spectrally modified electromagnetic energy from electromagnetic energy incident upon the arrangement. An optical function of the device is dependent at least in part on interference effects. An optical detector system includes a similar multilayer optical device. The space within the device is in fluid communication with structures for receiving a fluid such that the device operates in a first or second mode depending on absence or presence of the fluid within the space. The system includes a detector for receiving the modified electromagnetic energy, and a controller in fluid communication with the space that establishes the absence or presence of the fluid in the space.

Abstract: A method of mutually aligning first and second imaging system fixturing components forms a first alignment structure on the first imaging system fixturing component, a second alignment structure on the second imaging system fixturing component, and engages the first and second alignment structures to align, with optical accuracy, the first and second imaging system fixturing components.

Abstract: Technologies are generally described for providing inductively removable assembly bonding. Inductive elements may be placed strategically at bonding locations between two or more coupled components. At disassembly time, the elements may be heated through Radio Frequency (RF) energy causing the bonds to break and components to separate. For example, inductive elements placed near plastic stake bonds between dissimilar materials in an electronic device may be employed to separate the dissimilar materials during a recycling process. According to some examples, the elements may also be heated through a directly applied electric current via a network of connections designed into the assembly.

Abstract: A method of mutually aligning first and second imaging system fixturing components forms a first alignment structure on the first imaging system fixturing component, a second alignment structure on the second imaging system fixturing component, and engages the first and second alignment structures to align, with optical accuracy, the first and second imaging system fixturing components.

Abstract: Implementations and techniques for removing and segregating components from printed circuit boards are generally disclosed.

Abstract: A multilayer optical device includes an arrangement, on a substrate, of a first layer, a second layer, and a space therebetween. The second layer is a thin-film. The arrangement of the first and second layers and the space therebetween produces transmitted, reflected, or dispersed spectrally modified electromagnetic energy from electromagnetic energy incident upon the arrangement. An optical function of the device is dependent at least in part on interference effects. An optical detector system includes a similar multilayer optical device. The space within the device is in fluid communication with structures for receiving a fluid such that the device operates in a first or second mode depending on absence or presence of the fluid within the space. The system includes a detector for receiving the modified electromagnetic energy, and a controller in fluid communication with the space that establishes the absence or presence of the fluid in the space.

Abstract: Implementations and techniques for removing and segregating components from printed circuit boards are generally disclosed.

Abstract: Technologies are generally described for providing inductively removable assembly bonding. Inductive elements may be placed strategically at bonding locations between two or more coupled components. At disassembly time, the elements may be heated through Radio Frequency (RF) energy causing the bonds to break and components to separate. For example, inductive elements placed near plastic stake bonds between dissimilar materials in an electronic device may be employed to separate the dissimilar materials during a recycling process. According to some examples, the elements may also be heated through a directly applied electric current via a network of connections designed into the assembly.

Abstract: A method of mutually aligning first and second imaging system fixturing components forms a first alignment structure on the first imaging system fixturing component, a second alignment structure on the second imaging system fixturing component, and engages the first and second alignment structures to align, with optical accuracy, the first and second imaging system fixturing components.

Abstract: Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

Abstract: A self referencing heterodyne reflectometer is disclosed which rapidly alternates between a heterodyne reflectometry (HR) mode, in which an HR beam comprised of s- and p-polarized beam components at split angular frequencies of ? and ?+?? is employed, and a self referencing (SR) mode, in which an SR beam comprised of p-polarized beam components at split angular frequencies of ? and ?+?? is employed. Alternatively, in SR operating mode the SR beam is replaced by a p-polarized amplitude modulated (AM) beam, operating at two modulated amplitudes of ? and ?+?? at a single frequency, ??. When the two measurements are made in rapid succession, using an optical chopper switcher, temperature induced noise in the detector is be assumed to be equivalent. Film phase shift information is derived from the measured phase shift ?Ref/film, generated from the HR beam, and the reference phase shift ?Ref/Sub, generated from the SR/AM beam, which are used for calculating film thickness.

Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.

Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.

Abstract: For use with a chemical mechanical polishing apparatus for polishing a semiconductor wafer having a platen, a polishing pad and a wafer carrier, an optical closed-loop control system. In one embodiment, the system includes a plurality of optical probes impacting a corresponding probe window and rigidly mountable through the platen. The system also includes a flash lamp configured to provide light to each of the plurality of optical probes and minimize an exposure time of the light onto the semiconductor wafer, a spectrograph configured to spatially image light received by each of the plurality of optical probes to a common charge-coupled device and produce real-time spectral reflectometry data therefrom. The system further includes a control subsystem configured to analyze the real-time spectral reflectometry data and determine at least one wafer state parameter therefrom, and cause the polishing to be adjusted based upon the at least one wafer state parameter.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.