Abstract: A substrate having a durable hydrophobic and/or oleophobic surface. The durable hydrophobic and/or oleophobic surface includes a first layer that is disposed on the substrate and comprises inorganic nanoparticles, an outer layer comprising a fluorosilane, and an optional immobilizing layer that comprises at least one of an inorganic oxide and a silsesquioxane. The durable surface is capable of retaining optical properties, such as haze, and hydrophobic and/or oleophobic properties after repeated contact with foreign objects such as, for example, wiping with a cloth or human finger.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.

Abstract: A hermetic thin film includes a first inorganic layer and a second inorganic layer contiguous with the first inorganic layer, wherein the second inorganic layer is formed as a reaction product of the first inorganic layer with oxygen and has a molar volume that is about ?1% to 15% greater than a molar volume of the first inorganic layer. An equilibrium thickness of the second inorganic layer is at least 10% of but less than an as-deposited thickness of the first inorganic layer.

Abstract: A free-standing multi-laminate hermetic sheet includes a first carrier film, a hermetic inorganic thin film formed over the first carrier film, and a second carrier film formed over the hermetic inorganic thin film. A workpiece can be hermetically sealed using the multi-laminate sheet, which can be applied to the workpiece in a step separate from a formation step of either the multi-laminate sheet or the workpiece.

Abstract: A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.

Abstract: A glass substrate having at least one surface with engineered properties that include hydrophobicity, oleophobicity, anti-stick or adherence of particulate or liquid matter, durability, and transparency (i.e., haze<10%). The surface comprises a plurality of sets of topological features that together have a re-entrant geometry that prevents a decrease in contact angle and pinning of drops comprising at least one of water and sebaceous oils.

Abstract: A glass substrate having at least one surface with engineered properties that include hydrophobicity, oleophobicity, anti-stick or adherence of particulate or liquid matter, resistance to fingerprinting, durability, and transparency (i.e., haze<10%). The surface comprises at least one set of topological features that together have a re-entrant geometry that prevents a decrease in contact angle and pinning of drops comprising at least one of water and sebaceous oils.

Abstract: A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.

Abstract: A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.

Abstract: A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture.

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Abstract: A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Abstract: Tungsten-doped tin-fluorophosphate glasses are described herein which exhibit excellent humidity resistance, thermal resistance, and have a low glass transition temperature which makes them suitable for low temperature sealing applications, such as for encapsulating electronic components. In one embodiment, these glasses comprise 55-75% Sn, 4-14% P, 6-24% O, 4-22% F, and 0.15-15% W on a weight percent elemental basis.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a top emission device comprising the steps of depositing a low liquidus temperature (LLT) inorganic material on at least a portion of the top emission device to create a deposited LLT material, and optionally heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a LLT barrier layer, and optionally placing a cover glass over the LLT barrier layer. A top emission display device is also disclosed comprising a substrate, at least one electronic or optoelectronic layer, and a LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the LLT barrier layer and the substrate and an optional cover glass over the LLT barrier layer.

Abstract: A method for inhibiting oxygen and moisture degradation of a device (e.g., an OLED device) and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a Sn2+-containing inorganic oxide material is used to form a barrier layer on the device. The Sn2+-containing inorganic oxide material can be, for example, SnO, blended SnO & P2O5 powders, and blended SnO & BPO4 powders.

Abstract: A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.

Abstract: Tungsten-doped tin-fluorophosphate glasses are described herein which exhibit excellent humidity resistance, thermal resistance, and have a low glass transition temperature which makes them suitable for low temperature sealing applications, such as for encapsulating electronic components. In one embodiment, these glasses comprise 55-75% Sn, 4-14% P, 6-24% O, 4-22% F, and 0.15-15% W on a weight percent elemental basis.