Abstract: A dual mode snap back circuit device is disclosed. The dual mode snap back device may be used for electrostatic discharge (ESD) protection, and may provide both positive ESD protection and negative ESD protection. The dual mode snap back device may implement both an n-type metal-oxide-semiconductor (NMOS) transistor (e.g., a gate-grounded NMOS transistor, such as a gate-grounded extended drain NMOS (GGEDNMOS) transistor) to provide protection against positive ESD events and a bipolar junction transistor (BJT) (e.g., a PNP BJT) to provide protection against negative ESD events. Other embodiments may be described and claimed.

Abstract: A LiDAR system includes one or more light sources configured to emit a set of light pulses in a temporal sequence with randomized temporal spacings between adjacent light pulses, one or more detectors configured to receive a set of return light pulses, and a processor configured to: determine a time of flight for each return light pulse of the set of return light pulses; and obtain a point cloud based on the times of flight of the set of return light pulses. Each point corresponds to a respective return light pulse. The processor is further configured to, for each respective point of the set of points in the point cloud: analyze spatial and temporal relationships between the respective point and a set of neighboring points in the set of points; and evaluate a quality factor for the respective point based on the spatial and temporal relationships.

Abstract: Disclosed herein are transistor arrangements of field-effect transistors with dual thickness gate dielectrics. An example transistor arrangement includes a semiconductor channel material, a source region and a drain region, provided in the semiconductor material, and a gate stack provided over a portion of the semiconductor material that is between the source region and the drain region. The gate stack has a thinner gate dielectric in a portion that is closer to the source region and a thicker gate dielectric in a portion that is closer to the drain region, which may effectively realize tunable ballast resistance integrated with the transistor arrangement and may help increase the breakdown voltage and/or decrease the gate leakage of the transistor.

Abstract: A LiDAR sensor includes a first lens, a first laser source configured to emit a plurality of first light pulses to be collimated by the first lens, a flood illumination source configured to emit a plurality of second light pulses as diverging light rays, a second lens configured to receive and focus (i) a portion of any one of the plurality of first light pulses and (ii) a portion of any one of the plurality of second light pulses that are reflected off of the one or more objects, a detector configured to detect (i) the portion of any one of the plurality of first light pulses and (ii) the portion of any one of the plurality of second light pulses, and a processor configured to construct a three-dimensional image of the one or more objects based on the detected portions of first light pulses and second light pulses.

Abstract: According to a first embodiment, a feeding bottle comprises a vessel, collar, and nipple. The nipple comprises a base portion, a teat portion, an areola portion allowing movement of the teat portion towards and away from the base portion. According to a second embodiment, a feeding bottle comprises a vessel, collar, nipple and handle portion removeably secured to the vessel by the collar. The invention includes a flexible region or regions to provide a more natural feeding by closely mimicking the human breast.

Abstract: Disclosed herein are transistor arrangements of field-effect transistors with dual thickness gate dielectrics. An example transistor arrangement includes a semiconductor channel material, a source region and a drain region, provided in the semiconductor material, and a gate stack provided over a portion of the semiconductor material that is between the source region and the drain region. The gate stack has a thinner gate dielectric in a portion that is closer to the source region and a thicker gate dielectric in a portion that is closer to the drain region, which may effectively realize tunable ballast resistance integrated with the transistor arrangement and may help increase the breakdown voltage and/or decrease the gate leakage of the transistor.

Abstract: Sleep systems for aircraft are disclosed. An example sleep system includes a divider having a plurality of panels, each panel defining a pocket, and a lateral sleep apparatus positioned adjacent a seat, the lateral sleep apparatus to be positioned at least partially in the pocket of the panel.

Abstract: A LiDAR system includes one or more light sources configured to emit a set of light pulses in a temporal sequence with randomized temporal spacings between adjacent light pulses, one or more detectors configured to receive a set of return light pulses, and a processor configured to: determine a time of flight for each return light pulse of the set of return light pulses; and obtain a point cloud based on the times of flight of the set of return light pulses. Each point corresponds to a respective return light pulse. The processor is further configured to, for each respective point of the set of points in the point cloud: analyze spatial and temporal relationships between the respective point and a set of neighboring points in the set of points; and evaluate a quality factor for the respective point based on the spatial and temporal relationships.

Abstract: According to a first embodiment, a feeding bottle comprises a vessel, collar, and nipple. The nipple comprises a base portion, a teat portion, an areola portion allowing movement of the teat portion towards and away from the base portion. According to a second embodiment, a feeding bottle comprises a vessel, collar, nipple and handle portion removeably secured to the vessel by the collar. The invention includes a flexible region or regions to provide a more natural feeding by closely mimicking the human breast.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: Sleep systems for aircraft are disclosed. An example sleep system includes a seat having a first headrest. A lateral sleep apparatus is positioned adjacent the seat. The lateral sleep apparatus includes a second headrest and a cradle coupled to the second headrest. The cradle includes a first attachment assembly and a second attachment assembly. The first attachment assembly is to couple the cradle to a support structure of a cabin of an aircraft and the second attachment assembly is to couple the cradle to the seat.

Abstract: The invention provides for a dispenser package comprising a generally cylindrical container body and a cap removably mounted to the container body. The cap comprises a generally cylindrical cap body securable to an upper end of the container body. The cap body comprises a generally circular projecting portion having an outer circumferential surface and an upper surface that includes plural dispensing openings. A generally circular flip-up lid is connected to the cap body by a living hinge and being movable between a covering position and an open position.

Abstract: Fin shaping using templates, and integrated circuit structures resulting therefrom, are described. For example, integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has a vertical portion and one or more lateral recess pairs in the vertical portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack. A second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

Abstract: Methods and apparatuses for displays are disclosed. The display includes a tray, a stand, and a biasing member. The tray comprises a plurality of walls configured to house a plurality of consumer products. The stand is coupled to the tray and comprises an interior wall disengaging an interior face of a stand edge in a first configuration in which the stand is collapsed and engaging the stand edge in a second configuration in which the stand is erect. The biasing member is coupled to the stand and biases the stand to move from the first configuration to the second configuration.