Abstract: A boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension and a method for preparation thereof.

Abstract: A rapid, scalable methodology for graphene dispersion with a polymer-organic solvent solution and subsequent solvent exchange, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: Composites comprising anode and cathode active materials conformally coupled to few-layered graphene, corresponding electrodes and related methods of preparation.

Abstract: The present teachings provide methods for providing populations of single-walled carbon nanotubes that are substantially monodisperse in terms of diameter, electronic type, and/or chirality. Also provided are single-walled carbon nanotube populations provided thereby and articles of manufacture including such populations.

Abstract: Articles comprising a boron allotrope and an organic compound having a lateral interface one with the other, together with method(s) of preparation of such articles.

Abstract: The separation of single-walled carbon nanotubes (SWNTs), by electronic type using centrifugation of compositions of SWNTs and surface active block copolymers in density gradient media.

Abstract: A rapid, scalable methodology for graphene dispersion with a polymer-organic solvent solution and subsequent solvent exchange, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: A rapid, scalable methodology for graphene dispersion and concentration with a polymer-organic solvent medium, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.

Abstract: A method of fabricating a diode includes forming a first semiconductor layer having a first portion and a second portion extending from the first portion on a substrate; forming first and second electrodes on the substrate, the first electrode extending over and being in contact with the first portion of the first semiconductor layer; forming an insulting film to cover the first electrode and the first portion of the first semiconductor layer; and forming a second semiconductor layer having a first portion and a second portion extending from the first portion on the substrate. The second portion of the second semiconductor layer overlapping with the second portion of the first semiconductor layer to define a vertically stacked heterojunction therewith. The first portion of the second semiconductor layer extending over and being in contact with the second electrode. Each of the first and second semiconductor layers includes an atomically thin semiconductor.

Abstract: Separation of rhenium disulfide nanomaterials and related fluid density gradient media.

Abstract: A method of fabricating a CMOS logic device with SWCNTs includes forming a plurality of local metallic gate structures on a substrate by depositing a metal on the substrate; forming a plurality of contacts on the substrate; and depositing the SWCNTs on the substrate, and doping a certain area of the SWCNTs to form the CMOS logic device having at least one NMOS transistor and at least one PMOS transistor. Each of the NMOS and PMOS transistors has a gate formed by one of the local metallic gate structures, and a source and a drain formed by two of the contacts respectively. The gate of each PMOS transistor and the gate of each NMOS transistor are configured to alternatively receive at least one input voltage. At least one of the drain of the PMOS transistor and the drain of the NMOS transistor is configured to output an output voltage.

Abstract: Graphene ink compositions as can be utilized with gravure and screen printing processes, to provide flexible electronic components with high-resolution printed graphene circuitry.

Abstract: A rapid, scalable methodology for graphene dispersion and concentration with a polymer-organic solvent medium, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: A rapid, scalable methodology for graphene dispersion and concentration with a polymer-organic solvent medium, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: The present teachings provide methods for providing populations of single-walled carbon nanotubes that are substantially monodisperse in terms of diameter, electronic type, and/or chirality. Also provided are single-walled carbon nanotube populations provided thereby and articles of manufacture including such populations.

Abstract: Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.

Abstract: A rapid, scalable methodology for graphene dispersion and concentration with a polymer-organic solvent medium, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: A sensing platform includes a substrate, an array of wells formed in the substrate, and sorted nanoparticles filling in the array of wells such that each well contains a single sorted nanoparticle, wherein the sorted nanoparticles are in a cluster state.

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s).