Abstract: Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.

Abstract: A transverse thermoelectric includes a first array of hole-conducting nanowires and a second array of electron-conducting nanowires positioned orthogonal to the first array of nanowires. A substrate provides structure to the first array of nanowires and the second array of nanowires.

Abstract: The separation of single-walled carbon nanotubes (SWCNTs), by electronic type, using centrifugation of compositions of SWCNTs and surface active block copolymers in self-forming density gradient media.

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s).

Abstract: The present teachings provide methods for sorting nanotubes according to their wall number, and optionally further in terms of their diameter, electronic type, and/or chirality. Also provided are highly enriched nanotube populations provided thereby and articles of manufacture including such populations.

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract: The Present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract: A rapid, scalable methodology for graphene dispersion with a polymer-organic solvent solution and subsequent solvent exchange, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: Graphene ink compositions as can be utilized with gravure and screen printing processes, to provide flexible electronic components with high-resolution printed graphene circuitry.

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract: The separation of single-walled carbon nanotubes (SWNTs), by electronic type using centrifugation of compositions of SWNTs and surface active block copolymers in density gradient media.

Abstract: The Present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract: The Present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract: A rapid, scalable methodology for graphene dispersion with a polymer-organic solvent solution and subsequent solvent exchange, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: The separation of single-walled carbon nanotubes (SWNTs), by electronic type using centrifugation of compositions of SWNTs and surface active block copolymers in density gradient media.

Abstract: In one embodiment, a complementary metal-oxide-semiconductor (CMOS) logic device formed with single-walled carbon nanotubes (SWCNTs) includes: at least one p-type metal-oxide-semiconductor (PMOS) thin-film transistor (TFT) formed with the SWCNTs, and at least one n-type metal-oxide-semiconductor (NMOS) TFT formed with the SWCNTs, where each of the at least one PMOS TFT and the at least one NMOS TFT has a gate, a source and a drain. The gate of each of the at least one PMOS TFT and the gate of each of the at least one NMOS TFT is configured to alternatively receive at least one input voltage, and respectively includes a local metallic gate structure formed of a metal. At least one of the drain of the at least one PMOS TFT and the drain of the at least one NMOS TFT is configured to output an output voltage VOUT.

Abstract: A rapid, scalable methodology for graphene dispersion and concentration with a polymer-organic solvent medium, as can be utilized without centrifugation, to enhance graphene concentration.

Abstract: One aspect of the invention relates to a gate-tunable p-n heterojunction diode including a vertical stacked heterojunction of two ultrathin semiconductors. In one embodiment, single-layer molybdenum disulphide of an n-type semiconductor are stacked below semiconducting single-walled carbon nanotubes of a p-type semiconductor with each of them connected to a gold electrodes to form a p-n heterojunction. The electrical properties of the p-n heterojunction can be modulated by a gate voltage applied to a gate electrode and range from an insulator to a linear-response resistor to a highly rectifying diode. The gate tunability of the p-n heterojunction also allows spectral control over the photoresponse.

Abstract: Highly concentrated carbon nanotube or other nano-reinforcement suspensions and/or masses are prepared for use as admixtures in cement base materials to make cementitious composite materials.

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).