Abstract: Embodiments of the invention include a light emitting device (LED 10), a first wavelength converting material (13, in a matrix 14 to form a layer 12), and a second wavelength converting material (forming layer 16). The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material (13) is spaced apart from the light emitting device (10).

Abstract: An LED die (26) conformally coated with phosphor (28) is mounted at the base (24) of a shallow, square reflector cup (16). The cup has flat reflective walls (20) that slope upward from its base to its rim at a shallow angle of approximately 33 degrees. A clear encapsulant (30) completely fills the cup to form a smooth flat top surface. Any emissions from the LED die or phosphor at a low angle (48, 50) are totally internally reflected at the flat air-encapsulant interface toward the cup walls. This combined LED/phosphor light is then reflected upward by the walls (20) and out of the package. Since a large percentage of the light emitted by the LED and phosphor is mixed by the TIR and the walls prior to exiting the package, the color and brightness of the reflected light is fairly uniform across the beam. The encapsulant is intentionally designed to enhance TIR to help mix the light.

Abstract: An LED die (26) conformally coated with phosphor (28) is mounted at the base (24) of a shallow, square reflector cup (16). The cup has flat reflective walls (20) that slope upward from its base to its rim at a shallow angle of approximately 33 degrees. A clear encapsulant (30) completely fills the cup to form a smooth flat top surface. Any emissions from the LED die or phosphor at a low angle (48, 50) are totally internally reflected at the flat air-encapsulant interface toward the cup walls. This combined LED/phosphor light is then reflected upward by the walls (20) and out of the package. Since a large percentage of the light emitted by the LED and phosphor is mixed by the TIR and the walls prior to exiting the package, the color and brightness of the reflected light is fairly uniform across the beam. The encapsulant is intentionally designed to enhance TIR to help mix the light.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: A thin flash module for a camera uses a flexible circuit as a support surface. A blue GaN-based flip chip LED die is mounted on the flex circuit. The LED die has a thick transparent substrate forming a “top” exit window so at least 40% of the light emitted from the die is side light. A phosphor layer conformally coats the die and a top surface of the flex circuit. A stamped reflector having a knife edge rectangular opening surrounds the die. Curved surfaces extending from the opening reflect the light from the side surfaces to form a generally rectangular beam. A generally rectangular lens is affixed to the top of the reflector. The lens has a generally rectangular convex surface extending toward the die, wherein a beam of light emitted from the lens has a generally rectangular shape corresponding to an aspect ratio of the camera's field of view.

Abstract: An LED package creates a narrow beam in a very compact package without use of a lens. A plastic is molded around a metal lead frame (12, 14) to form a molded cup (26), where the cup has parabolic walls extending from a bottom area of the cup to a top thereof. The lead frame forms a first set of electrodes exposed at the bottom area of the cup for electrically contacting a set of LED die electrodes (18, 20). The lead frame also forms a second set of electrodes outside of the cup for connection to a power supply. A reflective metal (28) is then deposited on the curved walls of the cup. An LED die (16) is mounted at the bottom area of the cup and electrically connected to the first set of electrodes. The cup is then partially filled with an encapsulant (64) containing a phosphor (66).

Abstract: A packaged LED module includes an LED die mounted on a substrate surface. Formed on the substrate surface and surrounding the die is a first layer of a low index of refraction material. A lens of a higher index of refraction material is molded over the LED die and the first layer. The interface of the lens and the first layer reflects light by total internal reflection (TIR), in accordance with Snell's Law, when the LED light impinges at greater than the critical angle. The first layer may be a low index epoxy, silicone, or other material. In another embodiment, a layer surrounding the LED die is processed after the lens is formed to create an air/lens interface for TIR. The LED die may include a phosphor layer, which results in even more side light being reflected off the interface and not absorbed by the substrate surface.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.

Abstract: To reduce absorption by an LED die (12) of light emitted by a phosphor layer (48), the absorbing semiconductor layers of the LED die (12) are separated from the phosphor layer by a relatively thick glass plate (44) affixed to the LED die or by the LED die transparent growth substrate. Therefore, phosphor light emitted at a sufficient angle towards the LED die will pass through the transparent spacer (44) and exit the sidewalls of the spacer, preventing the light from being absorbed by the LED die. The LED die may be GaN based. The spacer is at least 100 microns thick. A 16% gain in light extraction is achievable using the technique compared to the light emission where phosphor is directly deposited on the LED semiconductor layers.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: A lens is affixed over an LED die mounted on a substrate to encapsulate the LED die. The lens may have a top surface shaped as a dome or other shape to achieve the desired light pattern. The lens has a cavity for the LED die. A reflector pattern is molded into the bottom surface of the lens, such as one or more facet rings with an angled surface surrounding the LED die. The angled surface of the facet ring reflects the downward or shallow light emission from the LED die upward. A plurality of facet rings of different radii and heights may be formed in the bottom of the lens for shaping the light emission. Any suitable shape of facet may be used. The facet rings may be formed to cause the LED module to emit a narrow beam or other light emission patterns.

Abstract: An LED module includes a substrate having a high thermal conductivity and at least one LED die mounted on the substrate. A wavelength conversion material, such as phosphor or quantum dots in a binder, has a very low thermal conductivity and is formed to have a relatively high volume and low concentration over the LED die so that the phosphor or quantum dots conduct little heat from the LED die. A transparent top plate, having a high thermal conductivity, is positioned over the wavelength conversion material, and a hermetic seal is formed between the top plate and the substrate surrounding the wavelength conversion material. The LED die is located in a cavity in either the substrate or the top plate. In this way, the temperature of the wavelength conversion material is kept well below the temperature of the LED die. The sealing is done in a wafer level process.

Abstract: An array of optical features is formed in a surface of a relatively thick growth substrate wafer. LED layers are epitaxially grown over the opposite surface of the growth substrate wafer. The LED layers include an active layer that emits light towards the growth substrate wafer. The resulting LED wafer is singulated to form individual LED dies having a growth substrate portion, wherein each growth substrate portion has at least one of the optical features. The optical features redirect a majority of light emitted from the active layer to exit the LED die through sidewalls of the growth substrate portion. The side-emitting LED die is mounted in a reflective cup and encapsulated with a phosphor material. The LED light thus energizes phosphor grains that are not overlying the LED die, so less phosphor light is absorbed by the LED die and efficiency is improved.

Abstract: Embodiments of the invention include a semiconductor structure (23) including a light emitting layer. A substrate (10) comprising lithium is attached to the semiconductor structure (23). A surface of the substrate (10) forms an angle with a major plane of the semiconductor structure (23) that is between 60° and 75°.

Abstract: To reduce absorption by an LED die (12) of light emitted by a phosphor layer (48), the absorbing semiconductor layers of the LED die (12) are separated from the phosphor layer by a relatively thick glass plate (44) affixed to the LED die or by the LED die transparent growth substrate. Therefore, phosphor light emitted at a sufficient angle towards the LED die will pass through the transparent spacer (44) and exit the sidewalls of the spacer, preventing the light from being absorbed by the LED die. The LED die may be GaN based. The spacer is at least 100 microns thick. A 16% gain in light extraction is achievable using the technique compared to the light emission where phosphor is directly deposited on the LED semiconductor layers.

Abstract: Embodiments of the invention include a light emitting device (LED 10), a first wavelength converting material (13, in a matrix 14 to form a layer 12), and a second wavelength converting material (forming layer 16). The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material (13) is spaced apart from the light emitting device (10).

Abstract: Embodiments of the invention include a semiconductor light emitting diode attached to a substrate. A first region of wavelength converting material is disposed on the substrate. The wavelength converting material is configured to absorb light emitted by the semiconductor light emitting diode and emit light at a different wavelength. In the first region, the wavelength converting material coats an entire surface of the substrate. The substrate is disposed proximate a bottom surface of an optical cavity. A second region of wavelength converting material is disposed proximate a top surface of the optical cavity.

Abstract: A light emission device comprising a light emitting element, a wavelength conversion (e.g. phosphor) element, and a filter that reduces Color over Angle (CoA) effects by at least partially reflecting light from the light emitting element that strike the filter at near-normal angles of incidence. In some embodiments, a combined phosphor and filter layer is formed over the LED die. The filter may comprise a dispersion of self-aligning moieties, such as dielectric platelets in a film that is vacuum laminated to the LED structure. Xirallic® Galaxy Blue pigment, comprising an aluminium oxide core coated on both sides with thin films of SnO2, and TiO2, and Ronastar® Blue, comprising Calcium Aluminum Borosilicate and TiO2 may provide the dielectric platelets.

Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.