Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant.

Abstract: A process for fabricating a semiconductor package which includes using an exothermically active nanoparticle paste to join an electrode of a semiconductor die to a support body.

Abstract: A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Abstract: A method for fabricating a semiconductor package which includes coupling an electrode of a semiconductor device to a portion of a lead frame, overmolding at least a portion of the die, and then removing a portion of the die to obtain a desired thickness.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The die may be silicon or GaN based MOSFETs or integrated circuits or a mixture thereof. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant. One die can be connected to the clip as well as the lead frame and the other may be an IC die insulated from the clip.

Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.

Abstract: A semiconductor package fabrication method in which drop on demand deposition of a drop on demand depositable material is used to prepare one component or a plurality of components of a semiconductor package or multi-chip module.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A semiconductor package that includes a conductive clip having an interior surface that includes a plurality of spaced raised portions, a semiconductor device having a first major surface that includes a plurality of spaced depressions each receiving one of the raised portions in the interior thereof, and a conductive adhesive disposed between each raised portion and a respective interior surface of a depression.

Abstract: A semiconductor package has a thinned semiconductor die fixed in a shallow opening in a conductive body. The die electrodes at the bottom of the die are plated with a redistributed contact which overlaps the die bottom contact and an insulation body which fills the annular gap between the die and opening. A process is described for the manufacture of the package in which plural spaced openings in a lead frame body and are simultaneously processed and singulated at the end of the process.

Abstract: An embedded inductor which includes a spiral conductive inductor embedded in a magnetically permeable body composed of particles of pre-sintered magnetically permeable (e.g. ferromagnetic) material and an epoxy binder.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A process for fabricating a semiconductor package which includes using an exothermically active nanoparticle paste to join an electrode of a semiconductor die to a support body.

Abstract: An integrated circuit which includes a circuit board having passive elements embedded in its body.

Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.