Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the semiconductor package to a mounting surface. The semiconductor package also includes a control FET of a power converter switching stage attached to the die side of the control conductive carrier, and a driver integrated circuit (IC) for driving the control FET. The driver IC is situated above the control FET and is electrically coupled to the control FET by at least one conductive buildup layer formed over the control conductive carrier.

Abstract: In one implementation, a semiconductor package includes a top-drain vertical FET in a first active die, a source of the top-drain vertical FET situated on a source side of the first active die and a drain and a gate of the top-drain vertical FET situated on a drain side of the first active die. The semiconductor package also includes a bottom-drain vertical FET in a second active die, a source and a gate of the bottom-drain vertical FET situated on a source side of the second active die and a drain of the bottom-drain vertical FET situated on a drain side of the second active die. The semiconductor package includes a conductive carrier attached to the source side of the first active die and to the drain side of the second active die, the conductive carrier coupling the source of the top-drain vertical FET to the drain of the bottom-drain vertical FET.

Abstract: In one implementation, a semiconductor package including conductive carrier coupled power switches includes a first vertical FET in a first active die having a first source and a first gate on a source side of the first active die and a first drain on a drain side of the first active die. The semiconductor package also includes a second vertical FET in a second active die having a second source and a second gate on a source side of the second active die and a second drain on a drain side of the second active die. The semiconductor package includes a conductive carrier attached to the source side of the first active die and to the drain side of the second active die, the conductive carrier coupling the first source to the second drain.

Abstract: In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the semiconductor package to a mounting surface. The semiconductor package also includes a control FET of a power converter switching stage having a control drain attached to the die side of the control conductive carrier. The control conductive carrier is configured to sink heat produced by the control FET into the mounting surface. The semiconductor package includes a sync conductive carrier having another die side and another opposite I/O side connecting the semiconductor package to the mounting surface, and a sync FET of the power converter switching stage having a sync source attached to the die side of the sync conductive carrier.

Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.

Abstract: A semiconductor package that includes a conductive clip having an interior surface that includes a plurality of spaced raised portions, a semiconductor device having a first major surface that includes a plurality of spaced depressions each receiving one of the raised portions in the interior thereof, and a conductive adhesive disposed between each raised portion and a respective interior surface of a depression.

Abstract: A semiconductor package including a conductive clip preferably in the shape of a can, a semiconductor die, and a conductive stack interposed between the die and the interior of the can which includes a conductive platform and a conductive adhesive body.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant.

Abstract: A process for fabricating a semiconductor package which includes using an exothermically active nanoparticle paste to join an electrode of a semiconductor die to a support body.

Abstract: A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Abstract: A method for fabricating a semiconductor package which includes coupling an electrode of a semiconductor device to a portion of a lead frame, overmolding at least a portion of the die, and then removing a portion of the die to obtain a desired thickness.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The die may be silicon or GaN based MOSFETs or integrated circuits or a mixture thereof. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant. One die can be connected to the clip as well as the lead frame and the other may be an IC die insulated from the clip.

Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.