Abstract: An integrated circuit which includes a circuit board having passive elements embedded in its body.

Abstract: A semiconductor package has a thinned semiconductor die fixed in a shallow opening in a conductive body. The die electrodes at the bottom of the die are plated with a redistributed contact which overlaps the die bottom contact and an insulation body which fills the annular gap between the die and opening. A process is described for the manufacture of the package in which plural spaced openings in a lead frame body and are simultaneously processed and singulated at the end of the process.

Abstract: A semiconductor package that includes two semiconductor die each disposed on a respective die pad and a large tracking distance interposed between at least two leads of the package for better creepage characteristics.

Abstract: A semiconductor package has a thinned semiconductor die fixed in a shallow opening in a conductive body. The die electrodes at the bottom of the die are plated with a redistributed contact which overlaps the die bottom contact and an insulation body which fills the annular gap between the die and opening. A process is described for the manufacture of the package in which plural spaced openings in a lead frame body and are simultaneously processed and singulated at the end of the process.

Abstract: A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.

Abstract: A semiconductor package that includes a semiconductor die, an insulation around the die, and a conforming conductive pad coupled to an electrode of the die.

Abstract: An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant.

Abstract: A method for fabricating a semiconductor package which includes coupling an electrode of a semiconductor device to a portion of a lead frame, overmolding at least a portion of the die, and then removing a portion of the die to obtain a desired thickness.

Abstract: A multi chip housing has a lead frame to which plural die are soldered. A heat spreader conductive cap encloses a volume containing the plural die or chips and is fixed to the periphery of the lead frame. The die may be silicon or GaN based MOSFETs or integrated circuits or a mixture thereof. The tops of the die are closely spaced from the interior of the cap and the volume is filled with a thermally conductive, electrically insulating plastic encapsulant. One die can be connected to the clip as well as the lead frame and the other may be an IC die insulated from the clip.

Abstract: A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Abstract: A semiconductor package including a conductive clip preferably in the shape of a can, a semiconductor die, and a conductive stack interposed between the die and the interior of the can which includes a conductive platform and a conductive adhesive body.

Abstract: A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.

Abstract: A semiconductor package fabrication method in which drop on demand deposition of a drop on demand depositable material is used to prepare one component or a plurality of components of a semiconductor package or multi-chip module.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: An embedded inductor which includes a spiral conductive inductor embedded in a magnetically permeable body composed of particles of pre-sintered magnetically permeable (e.g. ferromagnetic) material and an epoxy binder.

Abstract: An integrated semiconductor device which includes a plurality of power semiconductor devices formed in a common semiconductor die.

Abstract: A semiconductor package has a thinned semiconductor die fixed in a shallow opening in a conductive body. The die electrodes at the bottom of the die are plated with a redistributed contact which overlaps the die bottom contact and an insulation body which fills the annular gap between the die and opening. A process is described for the manufacture of the package in which plural spaced openings in a lead frame body and are simultaneously processed and singulated at the end of the process.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: A semiconductor package which includes two power semiconductor die arranged in a half-bridge configuration.