Abstract: An apparatus for fastening a burner of a discharge lamp to a housing or plug portion including a sleeve clamped around an outer bulb of the burner, an annular base fastened to the housing or plug portion of the electronic ballast unit having tabs that are orientated in the direction of the center point of the annular base and are biased against the sleeve. The tabs are inclined at an angle through an opening of the base, so that in the mounted condition of the burner, they rest against the sleeve below a surface of the annular base.

Abstract: A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake at a temperature lower or equal to 800° C., a subsequent deposition step will prevent deposition in the first surface region. This allows selective deposition in the second surface region, which is not doped with the Boron (or doped with another dopant or not doped). Several devices are, thus, provided. The method saves a usual photolithography sequence, which according to prior art is required for selective deposition of Si or SiGe in the second surface region.

Abstract: A lamp (10) for an automotive headlamp and a method for manufacturing such kind of a lamp (10) is provided, wherein the lamp (10) comprises a burner (12) for emitting light, a metal holder (20) connected to the burner (12) for supporting the burner (12), a first socket part (32) made from a heat-resistant plastic material, which is connected to the burner (12), and a second socket part (34), through which a part of the burner (12), which is connected to a first electrical pole (14), is led for connecting the burner (12) to a voltage source, wherein the second socket part (34) is arranged adjacent to the first socket part (32) such, that at least one insulating gap (42) for providing voltage resistance in mainly radial and/or axial direction is provided. Due to the first socket part (32) it is possible to receive the hot burner (12) by the socket without impairing the heat resistance, wherein the second socket part (34) may be made from a cheaper material.

Abstract: A method of forming a localized SOI structure in a substrate (10) wherein a trench (18) is formed in the substrate, and a dielectric layer (20) is formed on the base of the trench (18). The trench is filled with semiconductor material (22) by means of epitaxial growth.

Abstract: It is provided a burner (12) for automotive lamps (10), particularly HID lamps, comprising a discharge vessel (14) for generating light by means of a discharge arc. A first electrode (16) terminates in the discharge vessel (14). A second electrode (18) terminates in the discharge vessel (14) for generating the discharge arc in cooperation with the first electrode (16). A glass body (20) for protecting the discharge vessel (14) is provided. The glass body (20) comprises a shaft (22) for being inserted into a socket (24). The first electrode (16) is led through the shaft (22) out of the glass body (20) in a proximal direction (32) and the second electrode (18) is led spaced to the first electrode (16) outside the shaft (22) in proximal direction (32). The shaft (22) comprises at least one insulation pocket (26) for receiving a rib (36) of the socket (24) and for insulating the first electrode (16) outside the glass body (20).

Abstract: A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake at a temperature lower or equal to 800° C., a subsequent deposition step will prevent deposition in the first surface region. This allows selective deposition in the second surface region, which is not doped with the Boron (or doped with another dopant or not doped). Several devices are, thus, provided. The method saves a usual photolithography sequence, which according to prior art is required for selective deposition of Si or SiGe in the second surface region.

Abstract: The invention relates to a method and apparatus for fastening the burner of a discharge lamp to a housing or plug portion, comprising a sleeve to be clamped around the outer bulb of the burner and an annular base which can be fastened to the housing or plug portion of the electronic ballast unit and which has at least three tabs that are orientated in the direction of the center point of the annular base and may be biased against the sleeve. Furthermore the invention relates to a discharge lamp including a burner, the outer bulb of which is provided with a sleeve, via which the outer bulb is fastened to a housing or plug portion of an electronic ballast unit by means of an annular base, with tabs integrally moulded onto the base being spring-biased against the sleeve and being welded onto the same.

Abstract: A FinFET (100) comprises a fin-shaped layer-section (116) of a single-crystalline active semiconductor layer (104) extending on an insulating substrate layer (106) along a longitudinal fin direction between, a source layer-section (122), and a drain layer-section (124) of the single-crystalline active semiconductor layer (104). Furthermore, two separate gate-electrode layers (138.1, 138.2) are provided, which do not form sections of the single-crystalline active semiconductor layer, each of the gate-electrode layers facing one of the opposite side faces of the fin-shaped layer-section (116). Each gate-electrode layer is connected with a respective separate gate contact (154, 156).

Abstract: A high voltage transformer includes an elongate core of a ferromagnetic material. A plastic transformer frame has segment walls arranged perpendicular to the core. A secondary-winding is wound around the core in winding segments divided by the segment walls. A primary winding is formed of conductor segments to provide a loop around the core. At least one of the conductor segments is a connection pin molded in one of the segment walls.

Abstract: The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

Abstract: A high voltage transformer is described with an elongate core (38) out of a ferromagnetic material. A transformer frame (36) out of plastic material has segment walls (40) arranged perpendicular to the core (38). A secondary-winding is wound around the core (38) in winding segments divided by the segment walls (40). A primary winding is formed of conductor segments to provide a loop around the core. At least one of the conductor segments is a connection pin (50) molded in one of the segment walls.

Abstract: A lamp (10) for an automotive headlamp and a method for manufacturing such kind of a lamp (10) is provided, wherein the lamp (10) comprises a burner (12) for emitting light, a metal holder (20) connected to the burner (12) for supporting the burner (12), a first socket part (32) made from a heat-resistant plastic material, which is connected to the burner (12), and a second socket part (34), through which a part of the burner (12), which is connected to a first electrical pole (14), is led for connecting the burner (12) to a voltage source, wherein the second socket part (34) is arranged adjacent to the first socket part (32) such, that at least one insulating gap (42) for providing voltage resistance in mainly radial and/or axial direction is provided. Due to the first socket part (32) it is possible to receive the hot burner (12) by the socket without impairing the heat resistance, wherein the second socket part (34) may be made from a cheaper material.

Abstract: A lighting device (1) for a vehicle, and in particular a motor vehicle headlamp, comprising a light source (3) for emitting light and a reflector (2) for focusing the light emitted by the light source (3), there being formed, at the rear end of the reflector (2), an opening to receive at least a part (18) of the light source, and a reflector neck (21) that surrounds the opening and to which the light source (3) is fastened in a defined position relative to a reflective surface of the reflector (2).

Abstract: The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behaviour according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

Abstract: A method of forming a localized SOI structure in a substrate (10) wherein a trench (18) is formed in the substrate, and a dielectric layer (20) is formed on the base of the trench (18). The trench is filled with semiconductor material (22) by means of epitaxial growth.

Abstract: A lamp (10), particularly adapted for use as motor vehicle lamp, comprises a socket (12) made of a plastic material. The socket (12) may be adapted to support a burner for emitting light. The socket (12) comprises at least two connectors (22), by which the burner may be applied to an electric current. Each connector (22) comprises a terminal (24) protruding from the socket (12). According to the invention a metal cover (28) is provided, which receives the socket (12). The cover (28) comprises at least one opening (30) for providing an insulating space between the cover (28) and the terminals (24). Further the cover (28) is shaped to fit into a standardized holding recess of a reflector housing. Due to the design of the cover (28) the plastic material of the socket (12) may be significantly reduced and a good heat dissipation for the burner is provided, so that the lamp (10) is able to deal with a hot burner in a more cost efficient manner.

Abstract: A FinFET (100) comprises a fin-shaped layer-section (116) of a single-crystalline active semiconductor layer (104) extending on an insulating substrate layer (106) along a longitudinal fin direction between, a source layer-section (122), and a drain layer-section (124) of the single-crystalline active semiconductor layer (104). Furthermore, two separate gate-electrode layers (138.1, 138.2) are provided, which do not form sections of the single-crystalline active semiconductor layer, each of the gate-electrode layers facing one of the opposite side faces of the fin-shaped layer-section (116). Each gate-electrode layer is connected with a respective separate gate contact (154, 156).

Abstract: A high pressure discharge lamp (10), which is particularly a motor vehicle headlight, comprises a high pressure discharge burner (12) for emitting light supported by at least one leg (24), preferably three or four legs (24). By means of the legs (24) the burner (12) is mechanically connected to a socket (14) of the high pressure discharge lamp (10). According to the invention the legs (24) are part of a holder (16), which comprises further a ring (18) surrounding the socket (14), whereby the ring (18) is one-piece with the legs (24). Due to the design of the holder (16) as ring (18) with protruding legs (24) the heat of the burner (12) is conducted from the burner (12) via the legs (24) to the ring (18) by heat conduction. From the ring (18) the heat is led away to the environment by convection. This leads to a significant cooler Temperature of the holder (16) with respect to the burner (12), so that the material of the socket (14) needs not to be selected with respect to a good heat resistance.

Abstract: The present invention is related to a polypeptide comprising an amino acid sequence, whereby the amino acid sequence of the polypeptide is at least 80% identical to a stretch of consecutive amino acids of the region of HPGGT comprising an amino acid sequence corresponding to SEQ. ID. No. 1, whereby such region is defined by (a) amino acid positions 150 to 200 of the amino acid sequence according to SEQ. ID. No. 1, or (b) amino acid positions 410 to 480 of the amino acid sequence according to SEQ. ID. No. 1, and whereby the polypeptide is suitable to elicit an immune response which is capable of inhibiting the catalytic activity of HPGGT.

Abstract: The invention relates to a lamp for a light system, which lamp comprises at least: a lamp envelope (1) in which at least one electrical radiant source is enclosed and from which project at least two current supply means, a lamp base (2) that has at least one part by which the lamp envelope is fixed to the lamp base, and a reference element (3, 4) that is arranged on the lamp base wherein the material of the part of the lamp base by which the lamp base (2) is fixed to the lamp envelope (1) is composed of a plastics material or a mixture of plastics materials that is resistant to high temperatures.