Abstract: A method of producing side-emitting components includes providing a plurality of semiconductor chips on an auxiliary carrier, wherein the semiconductor chips on the auxiliary carrier are spaced apart from each other and each have a side surface provided with a transparent protective layer; covering the semiconductor chips with a radiation-reflecting molding compound so that in a plan view of the auxiliary carrier, the semiconductor chips are completely covered by the molding compound; and singulating the molding compound and the semiconductor chips into a plurality of components so that the components each include a semiconductor chip, wherein the components are singulated at the associated transparent protective layer, as a result of which the components each have a radiation exit surface exposed by the molding compound and formed by a surface of the remaining or exposed transparent protective layer.

Abstract: A light-emitting component includes a light-emitting element and a housing with a cavity. The housing includes a housing material that absorbs at least 80 percent of light in the visible range. The cavity is formed by a limiting wall, formed by a housing surface, and a plane of the element. The light-emitting element arranged within the cavity of the housing and positioned above the element plane includes an emission side located opposite to the element plane. The cavity is at least partially filled with a transparent material composed of a first material and a second material, wherein the first material at least partially covers the limiting wall, and the second material at least partially covers the emission side. A boundary surface is formed between the first material and the second material. A first refractive index of the first material is smaller than a second refractive index of the second material.

Abstract: An optoelectronic component includes a housing including a first cavity bounded by a first wall, wherein a circumferentially extending first step is formed at an inner side of the first wall, the first step circumferentially extends around the first cavity obliquely with respect to a bottom of the first cavity, a first optoelectronic semiconductor chip is arranged at the bottom of the first cavity, the first optoelectronic semiconductor chip is embedded into a first potting material arranged in the first cavity and extending from the bottom of the first cavity as far as the first step, and a first potting surface of the first potting material is formed at the first step.

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Abstract: A light-emitting device and a method for manufacturing a light emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip having a light-outcoupling surface and an optical element arranged on the light-outcoupling surface, wherein the light-emitting semiconductor chip is laterally surrounded by a frame element in a form-locking manner, wherein the optical element is mounted on the frame element, wherein the frame element projects beyond the light-outcoupling surface in a vertical direction such that a gas-filled gap is present at least in a partial region between the light-outcoupling surface and the optical element, and wherein the frame element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a first chip contact pad and a first soldering contact pad situated opposite the first chip contact pad, and a second leadframe section including a second chip contact pad and a second soldering contact pad situated opposite the second chip contact pad, wherein the first electrical contact electrically conductively connects to the first chip contact pad and the second electrical contact electrically conductively connects to the second chip contact pad, the first and second leadframe sections are embedded into a housing such that at least parts of the first and second soldering contact pads are accessible at an underside, and a solder stop element is arranged at the underside of the housing, the solder stop element extending between the first soldering contact pad and the second soldering contact pad.

Abstract: A display device with a retaining device is disclosed, which can be placed on the head of a user. The display device contains a first image generator, which is secured or can be secured to the retaining device, and a first optical imaging system which is secured to the retaining device and which is designed to image an image generated on a first image plane (E) by the first image generator such that the user can perceive the image with a first eye (LA) when the retaining device is placed on the head of the user. The retaining device supports a first refraction determining optical system which is designed to determine the subjective refraction of the first eye (LA) when the retaining device is placed on the head of the user and/or the first optical imaging system is configured to be variable.

Abstract: A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.

Abstract: Blood purification device having an extracorporeal blood circuit with a blood inflow and outflow to and from a dialysis unit, wherein the dialysis unit comprises a dialysis solution inflow and a dialysate outflow, characterized by a control loop for control of the acid-base equilibrium of the blood, wherein bicarbonate is supplied to the blood using an aqueous bicarbonate-containing solution, wherein a measuring means for measuring a blood buffer parameter is associated with the control loop, wherein the blood buffer parameter is selected from one of bicarbonate concentration and CO2 partial pressure, and wherein a signal corresponding to the measured value of the blood buffer parameter can be supplied to a closed-loop control apparatus, which regulates the value of the blood buffer parameter by the supply of bicarbonate, and at least one pH-measuring means, wherein a signal corresponding to the pH value can be supplied to an alarm apparatus.

Abstract: An optoelectronic component has at least one lead frame section, wherein an optoelectronic element is arranged on the lead frame section, a mold material is applied at least on a first face of the lead frame section and adhesively connected to the lead frame section by the first face, the lead frame section consists of a predetermined material, a part of the first face of the lead frame section is provided with a coating, a region of the first face is free of the coating, and the mold material connects to the material of the lead frame section in the free region.

Abstract: A method produces a plurality of conversion elements including: A) providing a first carrier; B) applying a first element to the first carrier using a first application technique, the first element including a conversion material, the first application technique being different from compression molding; C) applying a second element to the first carrier by a second application technique, the second element including quantum dots, the quantum dots being introduced into a matrix material and being different from the conversion material, the second application technique being molding or compression molding; D) hardening of the matrix material; E) optionally, rearranging the arrangement produced according to step D) to a second carrier; and F) separating so that a plurality of conversion elements are generated.

Abstract: A method of producing a carrier substrate for an optoelectronic semiconductor component includes: providing a leadframe including a first electrically conductive contact section and a second electrically conductive contact section, and injection molding a housing including a housing frame embedding the leadframe by an injection-molding material free of epoxy such that the leadframe embedded in the housing frame of the injection-molded housing forms a carrier substrate for an optoelectronic semiconductor component.

Abstract: A method of producing an optoelectronic component includes providing a lead frame having an upper side including a contact region and a chip reception region raised relative to the contact region; arranging an electrically conductive element on the contact region; embedding the lead frame in a molded body, wherein the contact region is covered by the molded body, and the chip reception region and the electrically conductive element remain accessible on an upper side of the molded body; arranging an optoelectronic semiconductor chip on the chip reception region; and connecting the optoelectronic semiconductor chip and the electrically conductive element by a bonding wire.

Abstract: A method of producing a converter component for an optoelectronic lighting apparatus includes forming a layer stack having an injection-molded or extruded conversion layer and an injection-molded or extruded diffuser layer. A converter component for an optoelectronic lighting apparatus includes a layer stack including an injection-molded or extruded conversion layer, and an injection-molded or extruded diffuser layer.

Abstract: A method of producing an optoelectronic component includes providing a lead frame having an upper side including a contact region and a chip reception region raised relative to the contact region; arranging an electrically conductive element on the contact region; embedding the lead frame in a molded body, wherein the contact region is covered by the molded body, and the chip reception region and the electrically conductive element remain accessible on an upper side of the molded body; arranging an optoelectronic semiconductor chip on the chip reception region; and connecting the optoelectronic semiconductor chip and the electrically conductive element by a bonding wire.

Abstract: A converter component for an opto-electronic lighting device includes an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier. An opto-electronic lighting device includes a light-emitting semiconductor component and the converter component for an opto-electronic light device including an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier with a removed auxiliary carrier.

Abstract: A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.

Abstract: A method of producing optoelectronic components includes providing an auxiliary carrier, forming separate connection elements on the auxiliary carrier, forming a molded body on the auxiliary carrier with recesses, arranging optoelectronic semiconductor chips on connection elements in the recesses of the molded body, removing the auxiliary carrier, and severing the molded body to form singulated optoelectronic components.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a first chip contact pad and a first soldering contact pad situated opposite the first chip contact pad, and a second leadframe section including a second chip contact pad and a second soldering contact pad situated opposite the second chip contact pad, wherein the first electrical contact electrically conductively connects to the first chip contact pad and the second electrical contact electrically conductively connects to the second chip contact pad, the first and second leadframe sections are embedded into a housing such that at least parts of the first and second soldering contact pads are accessible at an underside, and a solder stop element is arranged at the underside of the housing, the solder stop element extending between the first soldering contact pad and the second soldering contact pad.

Abstract: A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a mask layer arranged on an upper side of the optoelectronic semiconductor chip; providing a carrier having walls arranged on a surface of the carrier, the walls laterally limiting a receiving region; arranging an optoelectronic semiconductor chip in the receiving region, wherein a bottom side of the optoelectronic semiconductor chip faces the surface of the carrier; filling a region of the receiving region surrounding the optoelectronic semiconductor chip with an optically reflective material up to a height that lies between the upper side of the optoelectronic semiconductor chip and an upper side of the mask layer; removing the mask layer to create a free space in the optically reflective material; and introducing a wavelength-converting material into the free space.