Patents by Inventor Martin Poelzl

Martin Poelzl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power transistor
    Publication number: 20040089910
    Abstract: The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.
    Type: Application
    Filed: September 18, 2003
    Publication date: May 13, 2004
    Applicant: Infineon Technologies AG
    Inventors: Franz Hirler, Jenoe Tihanyi, Ralf Henninger, Joachim Krumrey, Martin Poelzl, Walter Rieger
  • Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
    Patent number: 6690062
    Abstract: The switching behavior of a transistor configuration is improved by providing a shielding electrode in an edge region. The shielding electrode surrounds at least sections of an active cell array. The capacitance between an edge gate structure and a drain zone and hence the gate-drain capacitance CGD of the transistor configuration is reduced by the shielding electrode located in the edge region.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: February 10, 2004
    Assignee: Infineon Technologies AG
    Inventors: Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Poelzl
  • Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
    Publication number: 20030178676
    Abstract: The switching behavior of a transistor configuration is improved by providing a shielding electrode in an edge region. The shielding electrode surrounds at least sections of an active cell array. The capacitance between an edge gate structure and a drain zone and hence the gate-drain capacitance CGD of the transistor configuration is reduced by the shielding electrode located in the edge region.
    Type: Application
    Filed: March 19, 2003
    Publication date: September 25, 2003
    Inventors: Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Poelzl