Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: A charge generated in a single photoelectric conversion unit during a certain period is stored in a first charge storing unit, and a charge generated in the single photoelectric conversion unit during a different period is stored in a second charge storing unit, and then a third transferring unit is set to on-state to transfer the charge to a floating diffusion, and then, in a state where the charge transferred to the floating diffusion is stored, a fourth transferring unit is set to on-state.

Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit. The plurality of times of charge transfers including a charge transfer performed at the end of the second period.

Abstract: The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line. During a second period after the output of the signals from the plurality of pixels is finished, the holding unit of each of the plurality of pixels holds an electric charge.

Abstract: A charge generated in a single photoelectric conversion unit during a certain period is stored in a first charge storing unit, and a charge generated in the single photoelectric conversion unit during a different period is stored in a second charge storing unit, and then a third transferring unit is set to on-state to transfer the charge to a floating diffusion, and then, in a state where the charge transferred to the floating diffusion is stored, a fourth transferring unit is set to on-state.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: Provided is a solid state imaging device including a plurality of pixels, a signal line on which a pixel signal is transmitted, a load transistor having a drain connected to the signal line, a readout circuit that reads out the pixel signal from the signal line, and a control unit that controls a current flowing in the load transistor in accordance with a potential of a control terminal. When a reference potential of the pixel fluctuates relatively to a reference potential of the readout circuit, a potential of the control terminal relative to a potential of a source of the load transistor is changed in a same phase with a fluctuation of the reference potential of the pixel.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A photoelectric conversion unit in each of a plurality of pixels starts accumulation of charges at a first time and is controlled to be turned on after the first time and to be thereafter turned off at a second time to transfer the charges to a holding unit. A second transfer switch in at least one of the pixels is controlled to be turned on at a third time and a fourth time after the second time to transfer the charges held in the holding unit to an amplification unit, and a first transfer switch in the at least one of the pixels is maintained to be in an off state during a period from the third time to a fourth time.

Abstract: Provided is a solid-state image pickup element including: a plurality of pixels arranged in a pixel well region; a readout circuit arranged in a peripheral well region, having a first input terminal for receiving the pixel signals from the plurality of pixels and a second input terminal for receiving a reference signal; and a reference signal circuit arranged in the peripheral well region, having a first electrode to which a ground voltage is supplied, and being configured to output the reference signal to the second input terminal of the readout circuit, wherein a resistance value R1 of an electrical path from one of a plurality of pixel well contacts to the first electrode and a resistance value R2 of an electrical path from one of a plurality of peripheral well contacts closest to the first electrode to the first electrode satisfy a relationship of R1<R2.

Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A solid-state imaging device includes a plurality of pixels each including a photoelectric conversion unit, a charge accumulating portion accumulating signal charges transferred from the photoelectric conversion unit, a floating diffusion portion accumulating signal charges transferred from the charge accumulating portion, and a read-out unit transferring signal charges from the charge accumulating portion to the floating diffusion portion and output a signal corresponding to the signal charges, and a control unit controlling the read-out unit to start, after starting read-out of signals of one frame from the charge accumulating portions, an accumulation of signal charges for a next frame at the photoelectric conversion units simultaneously, and to start, before completing the read-out of the signal of the one frame, an accumulation of signal charges at the charge accumulating portion of a pixel among the plurality of pixels from which the signal of the one frame is already read out.

Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A method of manufacturing a semiconductor device, the method, comprising a first etching step of etching a substrate on which a silicon member and a compound member containing nitrogen and silicon are exposed, by using a first etching gas containing XeF2 and H2, and a second etching step of etching the substrate by using a second etching gas containing XeF2, wherein the second etching gas satisfies at least one of (i) a condition that the second etching gas is lower in a partial pressure of H2 than the first etching gas, and (ii) a condition that the second etching gas is smaller in a quantity of flow of H2 than the first etching gas.

Abstract: A photoelectric conversion unit in each of a plurality of pixels starts accumulation of charges at a first time and is controlled to be turned on after the first time and to be thereafter turned off at a second time to transfer the charges to a holding unit. A second transfer switch in at least one of the pixels is controlled to be turned on at a third time and a fourth time after the second time to transfer the charges held in the holding unit to an amplification unit, and a first transfer switch in the at least one of the pixels is maintained to be in an off state during a period from the third time to a fourth time.